Abstract: Forming an oxide superconducting film includes a step of laminating a superconducting layer of an oxide superconducting material. The step of laminating the superconducting layer includes a pyrolyzed film forming step, a polycrystallization step, and a sintering heat treatment step. The pyrolyzed film forming step includes a coating film forming step and a pyrolyzing heat treatment step. In the coating film forming step, a solution of a metal organic compound is applied to form a coating film. In the pyrolyzing heat treatment step, the coating film is heat-treated to thermally decompose an organic component of the metal organic compound so as to form a pyrolyzed film. In the polycrystallization step, the pyrolyzed film is heat-treated to form a polycrystal layer containing polycrystals of the oxide superconducting material. In the sintering heat treatment step, the polycrystal layer is heat-treated to orient the polycrystals so as to form the superconducting layer.

Abstract: An oxide superconducting thin film material includes: a metal substrate having a surface with a biaxially oriented crystal orientation structure; an intermediate layer biaxially oriented and formed on the metal substrate; and an oxide superconducting thin film formed on the intermediate layer and composed of a RE123-based oxide superconductor represented by REBa2Cu3Oy. The oxide superconducting thin film includes Br (bromine).

Abstract: A superconducting wire includes a multilayer stack and a covering layer (stabilizing layer or protective layer). The multilayer stack includes a substrate having a main surface and a superconducting material layer formed on the main surface. The covering layer (stabilizing layer or protective layer) is disposed on at least the superconducting material layer. A front surface portion of the covering layer (stabilizing layer or protective layer) located on the superconducting material layer (front surface portion of the stabilizing layer or upper surface of the protective layer) has a concave shape.

Abstract: This invention provides a substrate for a superconducting wire used for manufacturing a superconducting wire with excellent superconductivity and a method for manufacturing the same. Such substrate for a superconducting wire exhibits the crystal orientation of metals on the outermost layer, such as a c-axis orientation rate of 99% or higher, a ?? of 6 degrees or less, and a percentage of an area in which the crystal orientation is deviated by 6 degrees or more from the (001) [100] per unit area of 6% or less.

Abstract: A superconducting wire has a tape-like shape, and includes a superconducting layer. An amount of heat required to raise temperature from 77 K to 300 K, for a unit region having a length of 1 m and a width of 4 mm in the superconducting wire, is more than or equal to 200 J and less than or equal to 500 J.

Abstract: An oxide superconducting wire includes an oriented metal substrate, an intermediate layer formed on the oriented metal substrate, and an oxide superconducting layer formed on the intermediate layer. The oriented metal substrate has an in-plane orientation ?? of 7° or less. The intermediate layer is formed of a single layer.

Abstract: A superconducting wire includes a multilayer stack and a covering layer (stabilizing layer or protective layer). The multilayer stack includes a substrate having a main surface and a superconducting material layer formed on the main surface. The covering layer (stabilizing layer or protective layer) is disposed on at least the superconducting material layer. A front surface portion of the covering layer (stabilizing layer or protective layer) located on the superconducting material layer (front surface portion of the stabilizing layer or upper surface of the protective layer) has a concave shape.

Abstract: A superconducting wire includes a metal substrate, an intermediate layer on the metal substrate, a superconducting material layer on the intermediate layer, and a cover layer on the superconducting material layer. The cover layer includes a protective layer on the superconducting material layer. A first stack formed by the intermediate layer and the superconducting material layer has a breakdown voltage of 1.1 V or greater.

Abstract: An oxide superconducting thin film material includes: a metal substrate having a surface with a biaxially oriented crystal orientation structure; an intermediate layer biaxially oriented and formed on the metal substrate; and an oxide superconducting thin film formed on the intermediate layer and composed of a RE123-based oxide superconductor represented by REBa2Cu3Oy. The oxide superconducting thin film includes Br (bromine).

Abstract: A superconducting wire includes: a substrate having a first main surface and a second main surface opposite to the first main surface; and a superconducting material layer disposed on the first main surface of the substrate. The superconducting material layer is disposed to cover at least a part of a side surface of the substrate in a width direction of the substrate.

Abstract: A superconducting wire includes a multilayer stack and a covering layer (stabilizing layer or protective layer). The multilayer stack includes a substrate having a main surface and a superconducting material layer formed on the main surface. The covering layer (stabilizing layer or protective layer) is disposed on at least the superconducting material layer. A front surface portion of the covering layer (stabilizing layer or protective layer) located on the superconducting material layer (front surface portion of the stabilizing layer or upper surface of the protective layer) has a concave shape.

Abstract: This invention provides a method for forming an oxide layer on a metal substrate, which enables manufacture of an oxide layer with improved crystal orientation in comparison with that of the outermost layer of a metal substrate. The method for forming an oxide layer on a metal substrate 20 via RF magnetron sputtering comprises a step of subjecting the crystal-oriented metal substrate 20 exhibiting a c-axis orientation of 99% on its outermost layer to RF magnetron sputtering while adjusting the angle ? formed by a perpendicular at a film formation position 20a on the metal substrate 20 and a line from the film formation position 20a to a point 10a at which the perpendicular magnetic flux density is zero on the target 10 located at the position nearest to the film formation position 20a to 15 degrees or less.

Abstract: An oxide superconducting wire includes an oriented metal substrate, an intermediate layer formed on the oriented metal substrate, and an oxide superconducting layer formed on the intermediate layer. The oriented metal substrate has an in-plane orientation ?? of 7° or less. The intermediate layer is formed of a single layer.

Abstract: An oxide superconducting thin film wire includes a metal substrate, a laminate, and a Cu stabilizing layer. The metal substrate includes a supporting base material and a conductive layer located on the supporting base material. The conductive layer includes a Cu layer serving as an internal layer and a biaxially orientated surface layer. The laminate includes a buffer layer, an oxide superconducting layer, and a Ag stabilizing layer stacked on the metal substrate in this order from the metal substrate. The Cu stabilizing layer is formed so as to surround the laminate and the metal substrate. At least one of the Cu stabilizing layer and the Ag stabilizing layer is formed so as to be in contact with at least a portion of the conductive layer of the metal substrate and be electrically conductive with the conductive layer of the metal substrate.

Abstract: This invention provides a substrate for a superconducting wire used for manufacturing a superconducting wire with excellent superconductivity and a method for manufacturing the same. Such substrate for a superconducting wire exhibits the crystal orientation of metals on the outermost layer, such as a c-axis orientation rate of 99% or higher, a ?? of 6 degrees or less, and a percentage of an area in which the crystal orientation is deviated by 6 degrees or more from the (001) [100] per unit area of 6% or less.

Abstract: A superconducting wire includes: a substrate having a first main surface and a second main surface opposite to the first main surface; and a superconducting material layer disposed on the first main surface of the substrate. The superconducting material layer is disposed to cover at least a part of a side surface of the substrate in a width direction of the substrate.

Abstract: A superconducting wire includes a multilayer stack and a covering layer (stabilizing layer or protective layer). The multilayer stack includes a substrate having a main surface and a superconducting material layer formed on the main surface. The covering layer (stabilizing layer or protective layer) is disposed on at least the superconducting material layer. A front surface portion of the covering layer (stabilizing layer or protective layer) located on the superconducting material layer (front surface portion of the stabilizing layer or upper surface of the protective layer) has a concave shape.

Abstract: An oxide superconducting thin film wire includes a metal substrate, a laminate, and a Cu stabilizing layer. The metal substrate includes a supporting base material and a conductive layer located on the supporting base material. The conductive layer includes a Cu layer serving as an internal layer and a biaxially orientated surface layer. The laminate includes a buffer layer, an oxide superconducting layer, and a Ag stabilizing layer stacked on the metal substrate in this order from the metal substrate. The Cu stabilizing layer is formed so as to surround the laminate and the metal substrate. At least one of the Cu stabilizing layer and the Ag stabilizing layer is formed so as to be in contact with at least a portion of the conductive layer of the metal substrate and be electrically conductive with the conductive layer of the metal substrate.

Abstract: This invention provides a method for forming an oxide layer on a metal substrate, which enables manufacture of an oxide layer with improved crystal orientation in comparison with that of the outermost layer of a metal substrate. The method for forming an oxide layer on a metal substrate 20 via RF magnetron sputtering comprises a step of subjecting the crystal-oriented metal substrate 20 exhibiting a c-axis orientation of 99% on its outermost layer to RF magnetron sputtering while adjusting the angle ? formed by a perpendicular at a film formation position 20a on the metal substrate 20 and a line from the film formation position 20a to a point 10a at which the perpendicular magnetic flux density is zero on the target 10 located at the position nearest to the film formation position 20a to 15 degrees or less.

Abstract: A superconducting thin film material exhibiting excellent superconducting properties and a method of manufacturing the same are provided. A superconducting thin film material includes a substrate, and a superconducting film formed on the substrate. The superconducting film includes an MOD layer formed by an MOD process, and a gas-phase-formed layer formed on the MOD layer by a gas-phase process. Since the MOD layer is formed first and then the gas-phase-formed layer is formed in this manner, degradation of the properties of the gas-phase-formed layer due to heat treatment in the step of forming the MOD layer (heat treatment in the MOD process) can be prevented.