Patents by Inventor Gennadey Belomoin

Gennadey Belomoin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Family of discretely sized silicon nanoparticles and method for producing the same
    Patent number: 7001578
    Abstract: A family of discrete and uniformly sized silicon nanoparticles, including 1 (blue emitting), 1.67 (green emitting), 2.15 (yellow emitting), 2.9 (red emitting) and 3.7 nm (infrared emitting) nanoparticles, and a method that produces the family. The nanoparticles produced by the method of the invention are highly uniform in size. A very small percentage of significantly larger particles are produced, and such larger particles are easily filtered out. The method for producing the silicon nanoparticles of the invention utilizes a gradual advancing electrochemical etch of bulk silicon, e.g., a silicon wafer. The etch is conducted with use of an appropriate intermediate or low etch current density. An optimal current density for producing the family is ˜10 milli Ampere per square centimeter (10 mA/cm2). Higher current density favors 1 nm particles, and lower the larger particles.
    Type: Grant
    Filed: April 22, 2004
    Date of Patent: February 21, 2006
    Assignee: The Board of Trustees of the University of Illinois
    Inventors: Munir H. Nayfeh, Gennadey Belomoin, Satish Rao, Joel Therrien, Sahraoui Chaieb
  • Family of discretely sized silicon nanoparticles and method for producing the same
    Patent number: 6743406
    Abstract: A family of discrete and uniformly sized silicon nanoparticles, including 1 (blue emitting), 1.67 (green emitting), 2.15 (yellow emitting), 2.9 (red emitting) and 3.7 nm (infrared emitting) nanoparticles, and a method that produces the family. The nanoparticles produced by the method of the invention are highly uniform in size. A very small percentage of significantly larger particles are produced, and such larger particles are easily filtered out. The method for producing the silicon nanoparticles of the invention utilizes a gradual advancing electrochemical etch of bulk silicon, e.g., a silicon wafer. The etch is conducted with use of an appropriate intermediate or low etch current density. An optimal current density for producing the family is ˜10 milli Ampere per square centimeter (10 mA/cm2). Higher current density favors 1 nm particles, and lower the larger particles.
    Type: Grant
    Filed: November 21, 2001
    Date of Patent: June 1, 2004
    Assignee: The Board of Trustees of the University of Illinois
    Inventors: Munir H. Nayfeh, Gennadey Belomoin, Satish Rao, Joel Therrien, Sahraoui Chaieb