Abstract: Apparatus for optical sensing includes first matrix of optical sensing elements, arranged on a semiconductor substrate in rows and columns. A second matrix of storage nodes is arranged on the substrate such that respective first and second storage nodes in the second matrix are disposed in proximity to each of the sensing elements within the first matrix. Switching circuitry couples each of the sensing elements to transfer photocharge to the respective first and second storage nodes. Control circuitry controls the switching circuitry in a depth sensing mode such that over a series of detection cycles, each of the sensing elements and a first neighboring sensing element are connected together to the respective first storage node during the first detection interval, and each of the sensing elements and the second neighboring sensing element are connected together to the respective second storage node during the second detection interval.

Abstract: A sensing device includes a first array of sensing elements, which output a signal indicative of a time of incidence of a single photon on the sensing element. A second array of processing circuits are coupled respectively to the sensing elements and comprise a gating generator, which variably sets a start time of the gating interval for each sensing element within each acquisition period, and a memory, which records the time of incidence of the single photon on each sensing element in each acquisition period. A controller sets, in each of at least some of the acquisition periods, different, respective gating intervals for different ones of the sensing elements.

Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions.

Abstract: Imaging apparatus (20) includes a photosensitive medium (22) and a bias electrode (32), which is at least partially transparent, overlying the photosensitive medium. An array of pixel circuits (26) is formed on a semiconductor substrate (30). Each pixel circuit includes a pixel electrode (24) coupled to collect the charge carriers from the photosensitive medium; a readout circuit (75) configured to output a signal indicative of a quantity of the charge carriers collected by the pixel electrode; a skimming gate (48) coupled between the pixel electrode and the readout circuit; and a shutter gate (46) coupled in parallel with the skimming gate between a node (74) in the pixel circuit and a sink site. The shutter gate and the skimming gate are opened sequentially in each of a sequence of image frames so as to apply a global shutter to the array and then to read out the collected charge carriers via the skimming gate to the readout circuit.

Abstract: Apparatus for optical sensing includes first matrix of optical sensing elements, arranged on a semiconductor substrate in rows and columns. A second matrix of storage nodes is arranged on the substrate such that respective first and second storage nodes in the second matrix are disposed in proximity to each of the sensing elements within the first matrix. Switching circuitry couples each of the sensing elements to transfer photocharge to the respective first and second storage nodes. Control circuitry controls the switching circuitry in a depth sensing mode such that over a series of detection cycles, each of the sensing elements and a first neighboring sensing element are connected together to the respective first storage node during the first detection interval, and each of the sensing elements and the second neighboring sensing element are connected together to the respective second storage node during the second detection interval.

Abstract: A sensor stack is described. The sensor stack includes first and second electromagnetic radiation sensors. The first electromagnetic radiation sensor has a high quantum efficiency for converting a first range of electromagnetic radiation wavelengths into a first set of electrical signals. The second electromagnetic radiation sensor is positioned in a field of view of the first electromagnetic radiation sensor and has a high quantum efficiency for converting a second range of electromagnetic radiation wavelengths into a second set of electrical signals and a low quantum efficiency for converting the first range of electromagnetic radiation wavelengths into the second set of electrical signals. The first range of wavelengths does not overlap the second range of wavelengths, and the second electromagnetic radiation sensor is at least partially transmissive to the first range of electromagnetic radiation wavelengths.

Abstract: A method for processing an image includes obtaining a set of pixel values captured from a pixel array during an image capture frame. The set of pixel values includes pixel values for a set of asymmetric pixels having different directional asymmetries. The method further includes detecting, using the pixel values for at least the asymmetric pixels and the different directional asymmetries of the asymmetric pixels, a directionality of image flare; and processing an image defined by the set of pixel values in accordance with the detected directionality of image flare. In some embodiments, image flare may be distinguished from noise using the set of pixel values.

Abstract: An electro-optical device includes a laser light source, which is configured to emit at least one beam of light. A beam steering device is configured to transmit and scan the at least one beam across a target scene. In an array of sensing elements, each sensing element is configured to output a signal indicative of incidence of photons on the sensing element. Light collection optics are configured to image the target scene scanned by the transmitted beam onto the array, wherein the beam steering device scans the at least one beam across the target scene with a spot size and scan resolution that are smaller than a pitch of the sensing elements. Circuitry is coupled to actuate the sensing elements only in a selected region of the array and to sweep the selected region over the array in synchronization with scanning of the at least one beam.

Abstract: Imaging apparatus (20) includes a photosensitive medium (22) and a bias electrode (32), which is at least partially transparent, overlying the photosensitive medium. An array of pixel circuits (26) is formed on a semiconductor substrate (30). Each pixel circuit includes a pixel electrode (24) coupled to collect the charge carriers from the photosensitive medium; a readout circuit (75) configured to output a signal indicative of a quantity of the charge carriers collected by the pixel electrode; a skimming gate (48) coupled between the pixel electrode and the readout circuit; and a shutter gate (46) coupled in parallel with the skimming gate between a node (74) in the pixel circuit and a sink site. The shutter gate and the skimming gate are opened sequentially in each of a sequence of image frames so as to apply a global shutter to the array and then to read out the collected charge carriers via the skimming gate to the readout circuit.

Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions.

Abstract: An electro-optical device includes a laser light source, which is configured to emit at least one beam of light. A beam steering device is configured to transmit and scan the at least one beam across a target scene. In an array of sensing elements, each sensing element is configured to output a signal indicative of incidence of photons on the sensing element. Light collection optics are configured to image the target scene scanned by the transmitted beam onto the array, wherein the beam steering device scans the at least one beam across the target scene with a spot size and scan resolution that are smaller than a pitch of the sensing elements. Circuitry is coupled to actuate the sensing elements only in a selected region of the array and to sweep the selected region over the array in synchronization with scanning of the at least one beam.

Abstract: A sensing device includes a first array of sensing elements, which output a signal indicative of a time of incidence of a single photon on the sensing element. A second array of processing circuits are coupled respectively to the sensing elements and comprise a gating generator, which variably sets a start time of the gating interval for each sensing element within each acquisition period, and a memory, which records the time of incidence of the single photon on each sensing element in each acquisition period. A controller sets, in each of at least some of the acquisition periods, different, respective gating intervals for different ones of the sensing elements.

Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions.

Abstract: A sensing device includes a first array of sensing elements, which output a signal indicative of a time of incidence of a single photon on the sensing element. A second array of processing circuits are coupled respectively to the sensing elements and comprise a gating generator, which variably sets a start time of the gating interval for each sensing element within each acquisition period, and a memory, which records the time of incidence of the single photon on each sensing element in each acquisition period. A controller controls the gating generator during a first sequence of the acquisition periods so as to sweep the gating interval over the acquisition periods and to identify a respective detection window for the sensing element, and during a second sequence of the acquisition periods, to fix the gating interval for each sensing element to coincide with the respective detection window.

Abstract: Pixel binning is performed by summing charge from some pixels positioned diagonally in a pixel array. Pixel signals output from pixels positioned diagonally in the pixel array may be combined on the output lines. A signal representing summed charge produces a binned 2×1 cluster. A signal representing combined voltage signals produces a binned 2×1 cluster. A signal representing summed charge and a signal representing combined pixel signals can be combined digitally to produce a binned 2×2 pixel. Orthogonal binning may be performed on other pixels in the pixel array by summing charge on respective common sense regions and then combining the voltage signals that represent the summed charge on respective output lines.

Abstract: A method for processing an image includes obtaining a set of pixel values captured from a pixel array during an image capture frame. The set of pixel values includes pixel values for a set of asymmetric pixels having different directional asymmetries. The method further includes detecting, using the pixel values for at least the asymmetric pixels and the different directional asymmetries of the asymmetric pixels, a directionality of image flare; and processing an image defined by the set of pixel values in accordance with the detected directionality of image flare. In some embodiments, image flare may be distinguished from noise using the set of pixel values.

Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions.

Abstract: An electronic device may include an optical image sensor and a pin hole array mask layer above the optical image sensor. The electronic device may also include a display layer above the pin hole array mask layer that includes spaced apart display pixels, and a transparent cover layer above the display layer defining a finger placement surface capable of receiving a finger adjacent thereto.

Abstract: An image sensor operable in global shutter mode may include an array of image pixels. Each image pixel may include a photodiode for detecting incoming light and a separate storage diode for temporarily storing charge. To maximize the efficiency of the image pixel array, image pixels may include light guide structures and light shield structures. The light guide structures may be used to funnel light away from the storage node and into the photodiode, while the light shield structures may be formed over storage nodes to block light from entering the storage nodes. The light guide structures may fill cone-shaped cavities in a dielectric layer, or the light guide structures may form sidewalls having a ring-shaped horizontal cross section. Metal interconnect structures in the dielectric layer may be arranged in concentric annular structures to form a near-field diffractive element that funnels light towards the appropriate photodiode.

Abstract: An electro-optical device includes a laser light source, which emits at least one beam of light pulses, a beam steering device, which transmits and scans the at least one beam across a target scene, and an array of sensing elements. Each sensing element outputs a signal indicative of a time of incidence of a single photon on the sensing element. Light collection optics image the target scene scanned by the transmitted beam onto the array. Circuitry is coupled to actuate the sensing elements only in a selected region of the array and to sweep the selected region over the array in synchronization with scanning of the at least one beam.