Patents by Inventor Gennadiy ITOV
Gennadiy ITOV has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11820654Abstract: Methods for producing halosilazane comprise halogenating a hydrosilazane with a halogenating agent to produce the halosilazane, the halosilazane having a formula (SiHa(NR2)bXc)(n+2)Nn(SiH(2?d)Xd)(n?1), wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n?1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR?3]; further wherein each R? of the [SiR?3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C1-C4 saturated or unsaturated hydrocarbyl group, a C1-C4 saturated or unsaturated alkoxy group, or an amino group [—NR1R2] with each R1 and R2 being further selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, provided that when c=0, d?0; or d=0, c?0.Type: GrantFiled: August 23, 2021Date of Patent: November 21, 2023Assignee: L'Air Liquide, Societe Anonyme Pour L'Etude Et L'Exploitation Des Procedes Georges ClaudeInventors: Jean-Marc Girard, Peng Zhang, Antonio Sanchez, Manish Khandelwal, Gennadiy Itov, Reno Pesaresi, Grigory Nikiforov, David Orban
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Patent number: 11780859Abstract: Compounds and method of preparation of Si—X and Ge—X compounds (X?N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X?N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.Type: GrantFiled: February 4, 2022Date of Patent: October 10, 2023Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges ClaudeInventors: Antonio Sanchez, Gennadiy Itov, Peng Zhang, Matthew Stephens, Manish Khandelwal
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Patent number: 11739220Abstract: A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.Type: GrantFiled: February 21, 2019Date of Patent: August 29, 2023Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc.Inventors: Antonio Sanchez, Gennadiy Itov, Manish Khandelwal, Cole Ritter, Peng Zhang, Jean-Marc Girard, Zhiwen Wan, Glenn Kuchenbeiser, David Orban, Sean Kerrigan, Reno Pesaresi, Matthew Damien Stephens, Yang Wang, Guillaume Husson, Grigory Nikiforov
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Patent number: 11699584Abstract: Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.Type: GrantFiled: March 10, 2021Date of Patent: July 11, 2023Assignee: L'Air Liquide, Société Anonyme pour l'Edute ed l'Exploitation des Procédés Georges ClaudeInventors: Jean-Marc Girard, Peng Zhang, Antonio Sanchez, Manish Khandelwal, Gennadiy Itov, Reno Pesaresi
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Publication number: 20230095074Abstract: A method of forming a gap filling on a substrate, the substrate having gaps formed therein, comprises: producing a gap filling polycarbosilazane polymer or oligomer by a polymerization of a reaction mixture of carbosilanes with amines; forming a solution containing the gap filling polycarbosilazane polymer or oligomer; and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to fill the gaps in the substrate forming the silicon and carbon containing gap filling, wherein a concentration of the gap filling polycarbosilazane polymer or oligomer in the solution ranges from 1 to 60 wt %.Type: ApplicationFiled: October 31, 2022Publication date: March 30, 2023Inventors: Yumin LIU, Jean-Marc GIRARD, Peng ZHANG, Fan QIN, Gennadiy ITOV, Fabrizio MARCHEGIANI, Thomas J. LARRABEE, Venkateswara R. PALLEM
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Patent number: 11499014Abstract: Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two —SiH2— moieties, either as terminal groups (—SiH3R) or embedded in a carbosilane cyclic compound, wherein R is H, a C1-C6 linear, branched, or cyclic alkyl- group, a C1-C6 linear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.Type: GrantFiled: December 31, 2019Date of Patent: November 15, 2022Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc.Inventors: Yumin Liu, Jean-Marc Girard, Peng Zhang, Fan Qin, Gennadiy Itov, Fabrizio Marchegiani, Thomas J. Larrabee
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Patent number: 11401166Abstract: Methods of selectively synthesizing n-tetrasilane are disclosed. N-tetrasilane is prepared by catalysis of silane (SiH4), disilane (Si2H6), trisilane (Si3H8), or mixtures thereof. More particularly, the disclosed synthesis methods tune and optimize the n-tetrasilane:i-tetrasilane isomer ratio. The isomer ratio may be optimized by selection of process parameters, such as temperature and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of n-tetrasilane.Type: GrantFiled: May 10, 2019Date of Patent: August 2, 2022Assignee: L'Air Liaquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges ClaudeInventors: Grigory Nikiforov, Gennadiy Itov
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Patent number: 11377359Abstract: Synthesis of silanes with more than three silicon atoms are disclosed (i.e., SinH(2n+2) with n=4-100). More particularly, the disclosed synthesis methods tune and optimize the isomer ratio by selection of process parameters such as temperature, residence time, and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of silanes containing more than three silicon atoms and particularly, the silanes containing preferably one major isomer. The pure isomers and isomer enriched mixtures are prepared by catalytic transformation of silane (SiH4), disilane (Si2H6), trisilane (Si3H8), and mixtures thereof.Type: GrantFiled: March 23, 2020Date of Patent: July 5, 2022Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges ClaudeInventors: Grigory Nikiforov, Guillaume Husson, Gennadiy Itov, Yang Wang
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Publication number: 20220153762Abstract: Compounds and method of preparation of Si—X and Ge—X compounds (X?N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X ?N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.Type: ApplicationFiled: February 4, 2022Publication date: May 19, 2022Inventors: Antonio SANCHEZ, Gennadiy Itov, Peng Zhang, Matthew Stephens, Manish Khandelwal
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Patent number: 11274112Abstract: Compounds and method of preparation of Si—X and Ge—X compounds (X=N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X=N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(O) on carbon, Pd(O) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si—containing films.Type: GrantFiled: October 14, 2019Date of Patent: March 15, 2022Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges ClaudeInventors: Antonio Sanchez, Gennadiy Itov, Peng Zhang, Matthew Damien Stephens, Manish Khandelwal
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Patent number: 11230474Abstract: Methods of selectively synthesizing n-tetrasilane are disclosed. N-tetrasilane is prepared by pyrolysis of silane (SiH4), disilane (Si2H6), trisilane (Si3H8), or mixtures thereof. More particularly, the disclosed synthesis methods tune and optimize the n-tetrasilane:i-tetrasilane isomer ratio. The isomer ratio may be optimized by selection of process parameters, such as temperature, residence time, and the relative amount of starting compounds. The disclosed synthesis methods allow facile preparation of n-tetrasilane.Type: GrantFiled: May 10, 2019Date of Patent: January 25, 2022Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges ClaudeInventors: Gennadiy Itov, Jian Hou, Grigory Nikiforov
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Publication number: 20210395890Abstract: Methods for producing halosilazane comprise halogenating a hydrosilazane with a halogenating agent to produce the halosilazane, the halosilazane having a formula (SiHa(NR2)bXc)(n+2)Nn(SiH(2?d)Xd)(n?1), wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n?1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR?3]; further wherein each R? of the [SiR?3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C1-C4 saturated or unsaturated hydrocarbyl group, a C1-C4 saturated or unsaturated alkoxy group, or an amino group [—NR1R2] with each R1 and R2 being further selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, provided that when c=0, d?0; or d=0, c?0.Type: ApplicationFiled: August 23, 2021Publication date: December 23, 2021Inventors: Jean-Marc GIRARD, Peng ZHANG, Antonio SANCHEZ, Manish KHANDELWAL, Gennadiy ITOV, Reno PESARESI, Grigory NIKIFOROV, David ORBAN
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Patent number: 11203528Abstract: Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH3)x(SiH2—)y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.Type: GrantFiled: March 11, 2020Date of Patent: December 21, 2021Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc.Inventors: Antonio Sanchez, Gennadiy Itov, Manish Khandelwal, Cole Ritter, Peng Zhang, Jean-Marc Girard, Zhiwen Wan, Glenn Kuchenbeiser, David Orban, Sean Kerrigan, Reno Pesaresi, Matthew Damien Stephens, Yang Wang, Guillaume Husson
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Patent number: 11124876Abstract: Methods for halogenation of a hydrosilazane include contacting the hydrosilazane with a halogenating agent in a liquid phase to produce the halosilazane having a formula (SiHa(NR2)bXc)(n+2)Nn(SiH(2?d)Xd)(n?1), wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n?1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR?3]; further wherein each R? of the [SiR?3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C1-C4 saturated or unsaturated hydrocarbyl group, a C1-C4 saturated or unsaturated alkoxy group, or an amino group [—NR1R2] with each R1 and R2 being further selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group.Type: GrantFiled: June 21, 2019Date of Patent: September 21, 2021Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges ClaudeInventors: Jean-Marc Girard, Peng Zhang, Antonio Sanchez, Manish Khandelwal, Gennadiy Itov, Reno Pesaresi, Grigory Nikiforov, David Orban
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Patent number: 11097953Abstract: Synthesis of silanes with more than three silicon atoms are disclosed (i.e., (SinH(2n+2) with n=4-100). More particularly, the disclosed synthesis methods tune and optimize the isomer ratio by selection of process parameters such as temperature, residence time, and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of silanes containing more than three silicon atoms and particularly, the silanes containing preferably one major isomer. The pure isomers and isomer enriched mixtures are prepared by catalytic transformation of silane (SiH4), disilane (Si2H6), trisilane (Si3H8), and mixtures thereof.Type: GrantFiled: October 11, 2018Date of Patent: August 24, 2021Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc.Inventors: Grigory Nikiforov, Guillaume Husson, Gennadiy Itov, Yang Wang
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Publication number: 20210225635Abstract: Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.Type: ApplicationFiled: March 10, 2021Publication date: July 22, 2021Inventors: Jean-Marc GIRARD, Peng ZHANG, Antonio SANCHEZ, Manish KHANDELWAL, Gennadiy ITOV, Reno PESARESI
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Publication number: 20210198429Abstract: Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two —SiH2— moieties, either as terminal groups (—SiH3R) or embedded in a carbosilane cyclic compound, wherein R is H, a C1-C6 linear, branched, or cyclic alkyl- group, a C1-C6 linear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.Type: ApplicationFiled: December 31, 2019Publication date: July 1, 2021Inventors: Yumin LIU, Jean-Marc GIRARD, Peng ZHANG, Fan QIN, Gennadiy ITOV, Fabrizio MARCHEGIANI, Thomas J. LARRABEE
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Publication number: 20210102092Abstract: A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)×(SiH2?)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.Type: ApplicationFiled: February 21, 2019Publication date: April 8, 2021Inventors: Antonio SANCHEZ, Gennadiy ITOV, Manish KHANDELWAL, Cole RITTER, Peng ZHANG, Jean-Marc GIRARD, Zhiwen WAN, Glenn KUCHENBEISER, David ORBAN, Sean KERRIGAN, Reno PESARESI, Matthew Damien STEPHENS, Yang WANG, Guillaume HUSSON, Grigory NIKIFOROV
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Publication number: 20210087406Abstract: A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.Type: ApplicationFiled: February 21, 2019Publication date: March 25, 2021Inventors: Antonio SANCHEZ, Gennadiy ITOV, Manish KHANDELWAL, Cole RITTER, Peng ZHANG, Jean-Marc GIRARD, Zhiwen WAN, Glenn KUCHENBEISER, David ORBAN, Sean KERRIGAN, Reno PESARESI, Matthew Damien STEPHENS, Yang WANG, Guillaume HUSSON, Grigory NIKIFOROV
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Publication number: 20200407228Abstract: Methods of synthesizing Si—H containing iodosilanes, such as diiodosilane or pentaiododisilane, using a halide exchange reaction are disclosed.Type: ApplicationFiled: September 10, 2020Publication date: December 31, 2020Inventors: Cole RITTER, Gennadiy ITOV, Manish KHANDELWAL, Jean-Marc GIRARD, Glenn KUCHENBEISER, Sean KERRIGAN, Peng ZHANG, Larry Kit-wing LEUNG, Nicolas BLASCO