Abstract: A power supply system controls the source impedance of a generator in real time utilizing two amplifiers having asymmetrical power profiles in reference to a nominal load impedance that are diametrically opposite in reference to the nominal load impedance. Variations in power profiles may be achieved by using different topologies for each of the amplifiers or implementing a phase delay network. The output power from the first and second amplifiers may be combined using a combiner circuit or device and the output power from the combiner is transmitted to a plasma load. The output power of each amplifier may be independently controlled to alter one or more characteristics of the output power signal provided by the individual amplifiers. By changing the ratio of the output power of the first amplifier to the output power of the second amplified, the source impedance of the generators may be varied in real time.

Abstract: A power supply system controls the source impedance of a generator utilizing two amplifiers having asymmetrical power profiles in reference to a nominal load impedance that are diametrically opposite in reference to the nominal load impedance. Variations in power profiles may be achieved by using different topologies for each of the amplifiers or implementing a phase delay network. The output power from the first and second amplifiers may be combined using a combiner circuit or device and the output power from the combiner is transmitted to a plasma load. The output power of each amplifier may be independently controlled to alter one or more characteristics of the output power signal provided by the individual amplifiers. By changing the ratio of the output power of the first amplifier to the output power of the second amplified, the source impedance of the generators may be varied.

Abstract: A power supply system controls the source impedance of a generator in real time utilizing two amplifiers having asymmetrical power profiles in reference to a nominal load impedance that are diametrically opposite in reference to the nominal load impedance. Variations in power profiles may be achieved by using different topologies for each of the amplifiers or implementing a phase delay network. The output power from the first and second amplifiers may be combined using a combiner circuit or device and the output power from the combiner is transmitted to a plasma load. The output power of each amplifier may be independently controlled to alter one or more characteristics of the output power signal provided by the individual amplifiers. By changing the ratio of the output power of the first amplifier to the output power of the second amplified, the source impedance of the generators may be varied in real time.

Abstract: This disclosure describes systems, methods, and apparatuses for impedance-matching radio frequency power transmitted from a radio frequency generator to a plasma load in a semiconductor processing chamber. Impedance-matching can be performed via a match network having a variable-reactance circuit. The variable-reactance circuit can comprise one or more reactive elements all connected to a first terminal and selectively shorted to a second terminal via a switch. The switch can comprise a bipolar junction transistor (BJT) or insulated gate bipolar transistor (IGBT) controlled via bias circuitry. In an on-state, the BJT base-emitter junction is forward biased, and AC is conducted between a collector terminal and a base terminal. Thus, AC passes through the BJT primarily from collector to base rather than from collector to emitter. Furthermore, the classic match network topology used with vacuum variable capacitors can be modified such that voltages do not overload the BJT's in the modified topology.

Abstract: This disclosure describes a switch having a collector, base, emitter, and an intrinsic region between the collector and base. The intrinsic region increases the efficiency of the switch and reduces losses. The collector, base, and emitter each have respective terminals, and an AC component of current passing through the base terminal is greater than an AC component of current passing through the emitter terminal. Additionally, in an on-state a first alternating current between the base and collector terminals is greater than a second alternating current between the collector and emitter terminals. In other words, AC passes primarily between collector and base as controlled by a DC current between the base and emitter.

Abstract: This disclosure describes systems, methods, and apparatuses for impedance-matching radio frequency power transmitted from a radio frequency generator to a plasma load in a semiconductor processing chamber. Impedance-matching can be performed via a match network having a variable-reactance circuit. The variable-reactance circuit can comprise one or more reactive elements all connected to a first terminal and selectively shorted to a second terminal via a switch. The switch can comprise a bipolar junction transistor (BJT) or insulated gate bipolar transistor (IGBT) controlled via bias circuitry. In an on-state, the BJT base-emitter junction is forward biased, and AC is conducted between a collector terminal and a base terminal. Thus, AC passes through the BJT primarily from collector to base rather than from collector to emitter. Furthermore, the classic match network topology used with vacuum variable capacitors can be modified such that voltages do not overload the BJT's in the modified topology.

Abstract: This disclosure describes systems, methods, and apparatuses for impedance-matching radio frequency power transmitted from a radio frequency generator to a plasma load in a semiconductor processing chamber. Impedance-matching can be performed via a match network having a variable-reactance circuit. The variable-reactance circuit can comprise one or more reactive elements all connected to a first terminal and selectively shorted to a second terminal via a switch. The switch can comprise a bipolar junction transistor (BJT) or insulated gate bipolar transistor (IGBT) controlled via bias circuitry. In an on-state, the BJT base-emitter junction is forward biased, and AC is conducted between a collector terminal and a base terminal. Thus, AC passes through the BJT primarily from collector to base rather than from collector to emitter. Furthermore, the classic match network topology used with vacuum variable capacitors can be modified such that voltages do not overload the BJT's in the modified topology.

Abstract: This disclosure describes a switch having a collector, base, emitter, and an intrinsic region between the collector and base. The intrinsic region increases the efficiency of the switch and reduces losses. The collector, base, and emitter each have respective terminals, and an AC component of current passing through the base terminal is greater than an AC component of current passing through the emitter terminal. Additionally, in an on-state a first alternating current between the base and collector terminals is greater than a second alternating current between the collector and emitter terminals. In other words, AC passes primarily between collector and base as controlled by a DC current between the base and emitter.

Abstract: This disclosure describes systems, methods, and apparatuses for impedance-matching radio frequency power transmitted from a radio frequency generator to a plasma load in a semiconductor processing chamber. Impedance-matching can be performed via a match network having a variable-reactance circuit. The variable-reactance circuit can comprise one or more reactive elements all connected to a first terminal and selectively shorted to a second terminal via a switch. The switch can comprise a bipolar junction transistor (BJT) or insulated gate bipolar transistor (IGBT) controlled via bias circuitry. In an on-state, the BJT base-emitter junction is forward biased, and AC is conducted between a collector terminal and a base terminal. Thus, AC passes through the BJT primarily from collector to base rather than from collector to emitter. Furthermore, the classic match network topology used with vacuum variable capacitors can be modified such that voltages do not overload the BJT's in the modified topology.

Abstract: This disclosure describes systems, methods, and apparatuses for impedance-matching radio frequency power transmitted from a radio frequency generator to a plasma load in a semiconductor processing chamber. Impedance-matching can be performed via a match network having a variable-reactance circuit. The variable-reactance circuit can comprise one or more reactive elements all connected to a first terminal and selectively shorted to a second terminal via a switch. The switch can comprise a bipolar junction transistor (BJT) or insulated gate bipolar transistor (IGBT) controlled via bias circuitry. In an on-state, the BJT base-emitter junction is forward biased, and AC is conducted between a collector terminal and a base terminal. Thus, AC passes through the BJT primarily from collector to base rather than from collector to emitter. Furthermore, the classic match network topology used with vacuum variable capacitors can be modified such that voltages do not overload the BJT's in the modified topology.

Abstract: This disclosure describes systems, methods, and apparatuses for impedance-matching radio frequency power transmitted from a radio frequency generator to a plasma load in a semiconductor processing chamber. Impedance-matching can be performed via a match network having a variable-reactance circuit. The variable-reactance circuit can comprise one or more reactive elements all connected to a first terminal and selectively shorted to a second terminal via a switch. The switch can comprise a bipolar junction transistor (BJT) or insulated gate bipolar transistor (IGBT) controlled via bias circuitry. In an on-state, the BJT base-emitter junction is forward biased, and AC is conducted between a collector terminal and a base terminal. Thus, AC passes through the BJT primarily from collector to base rather than from collector to emitter. Furthermore, the classic match network topology used with vacuum variable capacitors can be modified such that voltages do not overload the BJT's in the modified topology.

Abstract: One embodiment comprises a directional coupler system comprising a substrate having a top surface and a backside surface, with the backside surface comprising a metalization ground portion and an unmetalized portion. A power line is coupled to the top surface, with the power line having an input adapted to receive a power signal, a first trace coupled to the input, a second trace in parallel with the first trace and coupled to the input, and an output coupled to the first and second traces and adapted to emit the power signal. A sensor line is coupled to the backside surface unmetalized portion, with the sensor line adapted to emit a sensor line signal having a sensor line signal level generally proportional to the power signal. Finally, a thermo-conductive base platform coupled to the metalized portion of the backside surface.

Abstract: One embodiment comprises a directional coupler system comprising a substrate having a top surface and a backside surface, with the backside surface comprising a metalization ground portion and an unmetalized portion. A power line is coupled to the top surface, with the power line having an input adapted to receive a power signal, a first trace coupled to the input, a second trace in parallel with the first trace and coupled to the input, and an output coupled to the first and second traces and adapted to emit the power signal. A sensor line is coupled to the backside surface unmetalized portion, with the sensor line adapted to emit a sensor line signal having a sensor line signal level generally proportional to the power signal. Finally, a thermo-conductive base platform coupled to the metalized portion of the backside surface.

Abstract: A high-power PIN diode switch for use in applications such as plasma processing systems is described. One illustrative embodiment comprises an input terminal; an output terminal; and first and second transmission-line elements connected in parallel to the input and output terminals, each of the first and second transmission-line elements including a thermoconductive dielectric substrate and a microstrip line disposed on the thermoconductive dielectric substrate, the microstrip line including a plurality of substantially parallel sections that are magnetically coupled, electrically connected in series, and arranged so that electrical current flows in substantially the same direction in adjacent substantially parallel sections to mutually reinforce the magnetic fields associated with the adjacent substantially parallel sections.

Abstract: A high-power PIN diode switch for use in applications such as plasma processing systems is described. One illustrative embodiment comprises an input terminal; an output terminal; and first and second transmission-line elements connected in parallel to the input and output terminals, each of the first and second transmission-line elements including a thermoconductive dielectric substrate and a microstrip line disposed on the thermoconductive dielectric substrate, the microstrip line including a plurality of substantially parallel sections that are magnetically coupled, electrically connected in series, and arranged so that electrical current flows in substantially the same direction in adjacent substantially parallel sections to mutually reinforce the magnetic fields associated with the adjacent substantially parallel sections.

Abstract: Apparatus are disclosed for controlling the delivery of power to DC components such as computer components, microprocessors or the like. Designs of rectifier circuitry are presented which are appropriate for faster components, lower voltages, and higher currents. Embodiments are especially suited to applications which cause rapid changes in the conductance of the load, even in the sub-microsecond time domain as is common in computer applications and the like and in powering electronics equipment, especially a distributed system and especially a system wherein low voltage at high current is required. Embodiments and sub elements provide energy storage for low voltage, high current electronic loads, an ability to supply current with rapid time variation, providing extremely low inductance connections, permitting components to be located relatively remotely from the powered electronic load.

Abstract: Method and apparatus are disclosed for providing a constant voltage, high frequency sinusoidal output across a varying load, using either a single or multiple switch topology operating at constant frequency while maintaining high efficiency over the entire load range. This embodiment is especially suited to applications which require the sinusoidal voltage be held very close to a desired value in the presence of rapid changes in the conductance of the load, even in the sub-microsecond time domain as is common in computer applications and the like and in powering electronics equipment, especially a distributed system and especially a system wherein low voltage at high current is required.

Abstract: Apparatus are disclosed for controlling the delivery of power to DC components such as computer components, microprocessors or the like. Designs of voltage regulation modules are presented which are appropriate for faster components, lower voltages, and higher currents. Embodiments are especially suited to applications which cause rapid changes in the conductance of the load, even in the sub-microsecond time domain as is common in computer applications and the like and in powering electronics equipment, especially a distributed system and especially a system wherein low voltage at high current is required. Embodiments and sub-elements provide energy storage for low voltage, high current electronic loads, an ability to supply current with rapid time variation, providing extremely low inductance connections, permitting components to be located relatively remotely from the powered electronic load.

Abstract: Methods and circuitry for combining the outputs of multiphase power converters which greatly improves the transient response of the power conversion system are presented in a variety of embodiments. Transformers (e.g., 59, 60, 61, 62) may be used to accomplish the combining function, and with properly phased and connected windings it is possible to achieve a great reduction in output ripple current and a simultaneous reduction in transistor ripple current, which give the designer freedom to reduce the value of the system output inductor (e.g., 68), improving transient response.

Abstract: Method and apparatus are disclosed for providing a constant voltage, high frequency sinusoidal output across a varying load, using either a single or multiple switch topology operating at constant frequency while maintaining high efficiency over the entire load range. This embodiment is especially suited to applications which require the sinusoidal voltage be held very close to a desired value in the presence of rapid changes in the conductance of the load, even in the sub-microsecond time domain as is common in computer applications and the like and in powering electronics equipment, especially a distributed system and especially a system wherein low voltage at high current is required.