Patents by Inventor Gennady Gauzner

Gennady Gauzner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9964855
    Abstract: A method is disclosed that includes forming at least one substrate alignment mark and at least one lithography alignment mark in a substrate; forming a seed layer on the substrate; and forming a guide pattern and at least one guide pattern alignment mark in the seed layer, where the at least one guide pattern alignment mark is formed over the at least one substrate alignment mark. The method further includes determining an alignment error of the at least one guide pattern alignment mark relative to the at least one substrate alignment mark; and patterning features on at least one region of the substrate, where the features are positioned on the substrate based on the at least one lithography alignment mark and the alignment error.
    Type: Grant
    Filed: October 10, 2016
    Date of Patent: May 8, 2018
    Assignee: Seagate Technology LLC
    Inventors: HongYing Wang, Kim Y. Lee, Yautzong Hsu, Nobuo Kurataka, Gennady Gauzner, Shuaigang Xiao
  • Patent number: 9809887
    Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.
    Type: Grant
    Filed: February 24, 2016
    Date of Patent: November 7, 2017
    Assignee: Seagate Technology LLC
    Inventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Kim Yang Lee, Li-Ping Wang
  • Patent number: 9797924
    Abstract: Provided herein in an apparatus, including a substrate; a functional layer, wherein the functional layer has a composition characteristic of a workpiece of an analytical apparatus; and pre-determined features configured to calibrate the analytical apparatus. Also provided herein is an apparatus, including a functional layer overlying a substrate; and pre-determined features for calibration of an analytical apparatus configured to measure the surface of a workpiece, wherein the functional layer has a composition similar to the workpiece.
    Type: Grant
    Filed: April 17, 2013
    Date of Patent: October 24, 2017
    Assignee: Seagate Technology LLC
    Inventors: Gennady Gauzner, Zhaoning Yu, Nobuo Kurataka, David S. Kuo, Kim Y Lee, Yautzong Hsu, Hong Ying Wang
  • Patent number: 9683295
    Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
    Type: Grant
    Filed: May 24, 2016
    Date of Patent: June 20, 2017
    Assignee: Seagate Technology LLC
    Inventors: Michael R. Feldbaum, Koichi Wago, Gennady Gauzner, Kim Y. Lee, David S. Kuo
  • Publication number: 20170157643
    Abstract: A pattern imprint template incudes a patterned recesses and a layer formed over the patterned recesses. The pattern recesses form a pattern in a resist when brought in contact with a substrate with a resist thereon. The layer formed over the patterned recesses has a first surface energy. The first surface energy is lower in comparison to a second surface energy of the substrate with the resist thereon. The lower first surface energy in comparison to the second surface energy of the substrate avoids trapping gas in the resist by pushing gas toward the imprint template for venting through the patterned recesses.
    Type: Application
    Filed: February 14, 2017
    Publication date: June 8, 2017
    Inventors: Sang-Min Park, Nobuo Kurataka, Gennady Gauzner
  • Patent number: 9610712
    Abstract: The embodiments disclose a method of surface tension control to reduce trapped gas bubbles in an imprint including modifying chemistry aspects of interfacial surfaces of an imprint template and a substrate to modify surface tensions, differentiating the interfacial surface tensions to control interfacial flow rates of a pre-cured liquid resist and controlling pre-cured liquid resist interfacial flow rates to reduce trapping gas and prevent trapped gas bubble defects in cured imprinted resist.
    Type: Grant
    Filed: February 16, 2016
    Date of Patent: April 4, 2017
    Assignee: Seagate Technology LLC
    Inventors: Sang-Min Park, Nobuo Kurataka, Gennady Gauzner
  • Patent number: 9605348
    Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
    Type: Grant
    Filed: May 20, 2016
    Date of Patent: March 28, 2017
    Assignee: Seagate Technology LLC
    Inventors: Michael R. Feldbaum, Koichi Wago, Gennady Gauzner, Kim Y. Lee, David S. Kuo
  • Publication number: 20170023866
    Abstract: A method is disclosed that includes forming at least one substrate alignment mark and at least one lithography alignment mark in a substrate; forming a seed layer on the substrate; and forming a guide pattern and at least one guide pattern alignment mark in the seed layer, where the at least one guide pattern alignment mark is formed over the at least one substrate alignment mark. The method further includes determining an alignment error of the at least one guide pattern alignment mark relative to the at least one substrate alignment mark; and patterning features on at least one region of the substrate, where the features are positioned on the substrate based on the at least one lithography alignment mark and the alignment error.
    Type: Application
    Filed: October 10, 2016
    Publication date: January 26, 2017
    Inventors: HongYing Wang, Kim Y. Lee, Yautzong Hsu, Nobuo Kurataka, Gennady Gauzner, Shuaigang Xiao
  • Patent number: 9466324
    Abstract: A method is disclosed that includes forming at least one substrate alignment mark and at least one lithography alignment mark in a substrate; forming a seed layer on the substrate; and forming a guide pattern and at least one guide pattern alignment mark in the seed layer, where the at least one guide pattern alignment mark is formed over the at least one substrate alignment mark. The method further includes determining an alignment error of the at least one guide pattern alignment mark relative to the at least one substrate alignment mark; and patterning features on at least one region of the substrate, where the features are positioned on the substrate based on the at least one lithography alignment mark and the alignment error.
    Type: Grant
    Filed: October 31, 2013
    Date of Patent: October 11, 2016
    Assignee: Seagate Technology LLC
    Inventors: HongYing Wang, Kim Y Lee, Yautzong Hsu, Nobuo Kurataka, Gennady Gauzner, Shuaigang Xiao
  • Publication number: 20160265119
    Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
    Type: Application
    Filed: May 24, 2016
    Publication date: September 15, 2016
    Inventors: Michael R. Feldbaum, Koichi Wago, Gennady Gauzner, Kim Y. Lee, David S. Kuo
  • Publication number: 20160266493
    Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
    Type: Application
    Filed: May 20, 2016
    Publication date: September 15, 2016
    Inventors: Michael R. Feldbaum, Koichi Wago, Gennady Gauzner, Kim Y. Lee, David S. Kuo
  • Patent number: 9370907
    Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
    Type: Grant
    Filed: March 20, 2014
    Date of Patent: June 21, 2016
    Assignee: Seagate Technology LLC
    Inventors: Michael R. Feldbaum, Koichi Wago, Gennady Gauzner, Kim Y. Lee, David S. Kuo
  • Publication number: 20160168723
    Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.
    Type: Application
    Filed: February 24, 2016
    Publication date: June 16, 2016
    Inventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Kim Yang Lee, Li-Ping Wang
  • Publication number: 20160158972
    Abstract: The embodiments disclose a method of surface tension control to reduce trapped gas bubbles in an imprint including modifying chemistry aspects of interfacial surfaces of an imprint template and a substrate to modify surface tensions, differentiating the interfacial surface tensions to control interfacial flow rates of a pre-cured liquid resist and controlling pre-cured liquid resist interfacial flow rates to reduce trapping gas and prevent trapped gas bubble defects in cured imprinted resist.
    Type: Application
    Filed: February 16, 2016
    Publication date: June 9, 2016
    Inventors: Sang-Min Park, Nobuo Kurataka, Gennady Gauzner
  • Patent number: 9348219
    Abstract: Provided herein are methods for depositing a spin-on-glass composition over an imprinted resist; curing the spin-on-glass composition to form a cured spin-on-glass composition; and forming a patterned mask by etching the cured spin-on-glass composition, the resist, and an underlying mask composition, wherein the patterned mask comprises features of the cured spin-on-glass composition atop the mask composition, and wherein curing the spin-on-glass composition is configured to prevent shifting or toppling of the spin-on glass composition from atop the mask composition while forming the patterned mask.
    Type: Grant
    Filed: February 2, 2015
    Date of Patent: May 24, 2016
    Assignee: Seagate Technology LLC
    Inventors: Zhaoning Yu, Nobuo Kurataka, Gennady Gauzner
  • Patent number: 9330885
    Abstract: The embodiments disclose a method of stack patterning, including loading a stack into a stationary stack stage, rotating one or more ion beam grid assemblies substantially concentrically aligned with the stationary stack stage to etch the stack and controlling the operation of the one or more ion beam grid assemblies to achieve substantial axial uniformity of the etched stack.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: May 3, 2016
    Assignee: Seagate Technology LLC
    Inventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Li-Ping Wang
  • Patent number: 9284649
    Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: March 15, 2016
    Assignee: Seagate Technology LLC
    Inventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Kim Yang Lee, Li-Ping Wang
  • Publication number: 20160069929
    Abstract: Provided herein in an apparatus, including a substrate; a functional layer, wherein the functional layer has a composition characteristic of a workpiece of an analytical apparatus; and pre-determined features configured to calibrate the analytical apparatus. Also provided herein is an apparatus, including a functional layer overlying a substrate; and pre-determined features for calibration of an analytical apparatus configured to measure the surface of a workpiece, wherein the functional layer has a composition similar to the workpiece.
    Type: Application
    Filed: April 17, 2013
    Publication date: March 10, 2016
    Inventors: Gennady Gauzner, Zhaoning Yu, Nobuo Kurataka, David S. Kuo, Kim Y. Lee, Yautzong Hsu, Hong Ying Wang
  • Patent number: 9278857
    Abstract: The embodiments disclose a method of surface tension control to reduce trapped gas bubbles in an imprint including modifying chemistry aspects of interfacial surfaces of an imprint template and a substrate to modify surface tensions, differentiating the interfacial surface tensions to control interfacial flow rates of a pre-cured liquid resist and controlling pre-cured liquid resist interfacial flow rates to reduce trapping gas and prevent trapped gas bubble defects in cured imprinted resist.
    Type: Grant
    Filed: January 31, 2012
    Date of Patent: March 8, 2016
    Assignee: Seagate Technology Inc.
    Inventors: Sang-Min Park, Nobuo Kurataka, Gennady Gauzner
  • Publication number: 20150266233
    Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
    Type: Application
    Filed: March 20, 2014
    Publication date: September 24, 2015
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Michael R. Feldbaum, Koichi Wago, Gennady Gauzner, Kim Y. Lee, David S. Kuo