Patents by Inventor Gennady Gauzner
Gennady Gauzner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10828666Abstract: A pattern imprint template incudes a patterned recesses and a layer formed over the patterned recesses. The pattern recesses form a pattern in a resist when brought in contact with a substrate with a resist thereon. The layer formed over the patterned recesses has a first surface energy. The first surface energy is lower in comparison to a second surface energy of the substrate with the resist thereon. The lower first surface energy in comparison to the second surface energy of the substrate avoids trapping gas in the resist by pushing gas toward the imprint template for venting through the patterned recesses.Type: GrantFiled: February 14, 2017Date of Patent: November 10, 2020Assignee: SEAGATE TECHNOLOGY LLCInventors: Sang-Min Park, Nobuo Kurataka, Gennady Gauzner
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Patent number: 9964855Abstract: A method is disclosed that includes forming at least one substrate alignment mark and at least one lithography alignment mark in a substrate; forming a seed layer on the substrate; and forming a guide pattern and at least one guide pattern alignment mark in the seed layer, where the at least one guide pattern alignment mark is formed over the at least one substrate alignment mark. The method further includes determining an alignment error of the at least one guide pattern alignment mark relative to the at least one substrate alignment mark; and patterning features on at least one region of the substrate, where the features are positioned on the substrate based on the at least one lithography alignment mark and the alignment error.Type: GrantFiled: October 10, 2016Date of Patent: May 8, 2018Assignee: Seagate Technology LLCInventors: HongYing Wang, Kim Y. Lee, Yautzong Hsu, Nobuo Kurataka, Gennady Gauzner, Shuaigang Xiao
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Patent number: 9809887Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.Type: GrantFiled: February 24, 2016Date of Patent: November 7, 2017Assignee: Seagate Technology LLCInventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Kim Yang Lee, Li-Ping Wang
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Patent number: 9797924Abstract: Provided herein in an apparatus, including a substrate; a functional layer, wherein the functional layer has a composition characteristic of a workpiece of an analytical apparatus; and pre-determined features configured to calibrate the analytical apparatus. Also provided herein is an apparatus, including a functional layer overlying a substrate; and pre-determined features for calibration of an analytical apparatus configured to measure the surface of a workpiece, wherein the functional layer has a composition similar to the workpiece.Type: GrantFiled: April 17, 2013Date of Patent: October 24, 2017Assignee: Seagate Technology LLCInventors: Gennady Gauzner, Zhaoning Yu, Nobuo Kurataka, David S. Kuo, Kim Y Lee, Yautzong Hsu, Hong Ying Wang
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Patent number: 9683295Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.Type: GrantFiled: May 24, 2016Date of Patent: June 20, 2017Assignee: Seagate Technology LLCInventors: Michael R. Feldbaum, Koichi Wago, Gennady Gauzner, Kim Y. Lee, David S. Kuo
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Publication number: 20170157643Abstract: A pattern imprint template incudes a patterned recesses and a layer formed over the patterned recesses. The pattern recesses form a pattern in a resist when brought in contact with a substrate with a resist thereon. The layer formed over the patterned recesses has a first surface energy. The first surface energy is lower in comparison to a second surface energy of the substrate with the resist thereon. The lower first surface energy in comparison to the second surface energy of the substrate avoids trapping gas in the resist by pushing gas toward the imprint template for venting through the patterned recesses.Type: ApplicationFiled: February 14, 2017Publication date: June 8, 2017Inventors: Sang-Min Park, Nobuo Kurataka, Gennady Gauzner
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Patent number: 9610712Abstract: The embodiments disclose a method of surface tension control to reduce trapped gas bubbles in an imprint including modifying chemistry aspects of interfacial surfaces of an imprint template and a substrate to modify surface tensions, differentiating the interfacial surface tensions to control interfacial flow rates of a pre-cured liquid resist and controlling pre-cured liquid resist interfacial flow rates to reduce trapping gas and prevent trapped gas bubble defects in cured imprinted resist.Type: GrantFiled: February 16, 2016Date of Patent: April 4, 2017Assignee: Seagate Technology LLCInventors: Sang-Min Park, Nobuo Kurataka, Gennady Gauzner
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Patent number: 9605348Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.Type: GrantFiled: May 20, 2016Date of Patent: March 28, 2017Assignee: Seagate Technology LLCInventors: Michael R. Feldbaum, Koichi Wago, Gennady Gauzner, Kim Y. Lee, David S. Kuo
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Publication number: 20170023866Abstract: A method is disclosed that includes forming at least one substrate alignment mark and at least one lithography alignment mark in a substrate; forming a seed layer on the substrate; and forming a guide pattern and at least one guide pattern alignment mark in the seed layer, where the at least one guide pattern alignment mark is formed over the at least one substrate alignment mark. The method further includes determining an alignment error of the at least one guide pattern alignment mark relative to the at least one substrate alignment mark; and patterning features on at least one region of the substrate, where the features are positioned on the substrate based on the at least one lithography alignment mark and the alignment error.Type: ApplicationFiled: October 10, 2016Publication date: January 26, 2017Inventors: HongYing Wang, Kim Y. Lee, Yautzong Hsu, Nobuo Kurataka, Gennady Gauzner, Shuaigang Xiao
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Patent number: 9466324Abstract: A method is disclosed that includes forming at least one substrate alignment mark and at least one lithography alignment mark in a substrate; forming a seed layer on the substrate; and forming a guide pattern and at least one guide pattern alignment mark in the seed layer, where the at least one guide pattern alignment mark is formed over the at least one substrate alignment mark. The method further includes determining an alignment error of the at least one guide pattern alignment mark relative to the at least one substrate alignment mark; and patterning features on at least one region of the substrate, where the features are positioned on the substrate based on the at least one lithography alignment mark and the alignment error.Type: GrantFiled: October 31, 2013Date of Patent: October 11, 2016Assignee: Seagate Technology LLCInventors: HongYing Wang, Kim Y Lee, Yautzong Hsu, Nobuo Kurataka, Gennady Gauzner, Shuaigang Xiao
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Publication number: 20160265119Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.Type: ApplicationFiled: May 24, 2016Publication date: September 15, 2016Inventors: Michael R. Feldbaum, Koichi Wago, Gennady Gauzner, Kim Y. Lee, David S. Kuo
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Publication number: 20160266493Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.Type: ApplicationFiled: May 20, 2016Publication date: September 15, 2016Inventors: Michael R. Feldbaum, Koichi Wago, Gennady Gauzner, Kim Y. Lee, David S. Kuo
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Patent number: 9370907Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.Type: GrantFiled: March 20, 2014Date of Patent: June 21, 2016Assignee: Seagate Technology LLCInventors: Michael R. Feldbaum, Koichi Wago, Gennady Gauzner, Kim Y. Lee, David S. Kuo
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Publication number: 20160168723Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.Type: ApplicationFiled: February 24, 2016Publication date: June 16, 2016Inventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Kim Yang Lee, Li-Ping Wang
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Publication number: 20160158972Abstract: The embodiments disclose a method of surface tension control to reduce trapped gas bubbles in an imprint including modifying chemistry aspects of interfacial surfaces of an imprint template and a substrate to modify surface tensions, differentiating the interfacial surface tensions to control interfacial flow rates of a pre-cured liquid resist and controlling pre-cured liquid resist interfacial flow rates to reduce trapping gas and prevent trapped gas bubble defects in cured imprinted resist.Type: ApplicationFiled: February 16, 2016Publication date: June 9, 2016Inventors: Sang-Min Park, Nobuo Kurataka, Gennady Gauzner
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Patent number: 9348219Abstract: Provided herein are methods for depositing a spin-on-glass composition over an imprinted resist; curing the spin-on-glass composition to form a cured spin-on-glass composition; and forming a patterned mask by etching the cured spin-on-glass composition, the resist, and an underlying mask composition, wherein the patterned mask comprises features of the cured spin-on-glass composition atop the mask composition, and wherein curing the spin-on-glass composition is configured to prevent shifting or toppling of the spin-on glass composition from atop the mask composition while forming the patterned mask.Type: GrantFiled: February 2, 2015Date of Patent: May 24, 2016Assignee: Seagate Technology LLCInventors: Zhaoning Yu, Nobuo Kurataka, Gennady Gauzner
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Patent number: 9330885Abstract: The embodiments disclose a method of stack patterning, including loading a stack into a stationary stack stage, rotating one or more ion beam grid assemblies substantially concentrically aligned with the stationary stack stage to etch the stack and controlling the operation of the one or more ion beam grid assemblies to achieve substantial axial uniformity of the etched stack.Type: GrantFiled: June 30, 2011Date of Patent: May 3, 2016Assignee: Seagate Technology LLCInventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Li-Ping Wang
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Patent number: 9284649Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.Type: GrantFiled: June 30, 2011Date of Patent: March 15, 2016Assignee: Seagate Technology LLCInventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Kim Yang Lee, Li-Ping Wang
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Publication number: 20160069929Abstract: Provided herein in an apparatus, including a substrate; a functional layer, wherein the functional layer has a composition characteristic of a workpiece of an analytical apparatus; and pre-determined features configured to calibrate the analytical apparatus. Also provided herein is an apparatus, including a functional layer overlying a substrate; and pre-determined features for calibration of an analytical apparatus configured to measure the surface of a workpiece, wherein the functional layer has a composition similar to the workpiece.Type: ApplicationFiled: April 17, 2013Publication date: March 10, 2016Inventors: Gennady Gauzner, Zhaoning Yu, Nobuo Kurataka, David S. Kuo, Kim Y. Lee, Yautzong Hsu, Hong Ying Wang
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Patent number: 9278857Abstract: The embodiments disclose a method of surface tension control to reduce trapped gas bubbles in an imprint including modifying chemistry aspects of interfacial surfaces of an imprint template and a substrate to modify surface tensions, differentiating the interfacial surface tensions to control interfacial flow rates of a pre-cured liquid resist and controlling pre-cured liquid resist interfacial flow rates to reduce trapping gas and prevent trapped gas bubble defects in cured imprinted resist.Type: GrantFiled: January 31, 2012Date of Patent: March 8, 2016Assignee: Seagate Technology Inc.Inventors: Sang-Min Park, Nobuo Kurataka, Gennady Gauzner