Patents by Inventor Gennady Openganden

Gennady Openganden has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-resolution X-ray diffraction measurement with enhanced sensitivity
    Patent number: 8731138
    Abstract: A method for analysis includes directing a converging beam of X-rays toward a surface of a sample having an epitaxial layer formed thereon, and sensing the X-rays that are diffracted from the sample while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum including a diffraction peak and fringes due to the epitaxial layer. A characteristic of the fringes is analyzed in order to measure a relaxation of the epitaxial layer.
    Type: Grant
    Filed: July 12, 2012
    Date of Patent: May 20, 2014
    Assignee: Jordan Valley Semiconductor Ltd.
    Inventors: Boris Yokhin, Isaac Mazor, Alexander Krohmal, Amos Gvirtzman, Gennady Openganden, David Berman, Matthew Wormington
  • Enhancing accuracy of fast high-resolution X-ray diffractometry
    Patent number: 8687766
    Abstract: A method for analysis includes directing a converging beam of X-rays toward a surface of a sample and sensing the X-rays that are diffracted from the sample while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum of the sample. The diffraction spectrum is corrected to compensate for a non-uniform property of the converging beam.
    Type: Grant
    Filed: July 12, 2011
    Date of Patent: April 1, 2014
    Assignee: Jordan Valley Semiconductors Ltd.
    Inventors: Matthew Wormington, Alexander Krohmal, David Berman, Gennady Openganden
  • High-Resolution X-Ray Diffraction Measurement with Enhanced Sensitivity
    Publication number: 20120281814
    Abstract: A method for analysis includes directing a converging beam of X-rays toward a surface of a sample having an epitaxial layer formed thereon, and sensing the X-rays that are diffracted from the sample while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum including a diffraction peak and fringes due to the epitaxial layer. A characteristic of the fringes is analyzed in order to measure a relaxation of the epitaxial layer.
    Type: Application
    Filed: July 12, 2012
    Publication date: November 8, 2012
    Applicant: JORDAN VALLEY SEMICONDUCTORS LTD
    Inventors: Boris Yokhin, Isaac Mazor, Alexander Krohmal, Amos Gvirtzman, Gennady Openganden, David Berman, Matthew Wormington
  • High-resolution X-ray diffraction measurement with enhanced sensitivity
    Patent number: 8243878
    Abstract: A method for analysis includes directing a converging beam of X-rays toward a surface of a sample having an epitaxial layer formed thereon, and sensing the X-rays that are diffracted from the sample while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum including a diffraction peak and fringes due to the epitaxial layer. A characteristic of the fringes is analyzed in order to measure a relaxation of the epitaxial layer.
    Type: Grant
    Filed: January 7, 2010
    Date of Patent: August 14, 2012
    Assignee: Jordan Valley Semiconductors Ltd.
    Inventors: Boris Yokhin, Isaac Mazor, Alexander Krohmal, Amos Gvirtzman, Gennady Openganden, David Berman, Matthew Wormington
  • ENHANCING ACCURACY OF FAST HIGH-RESOLUTION X-RAY DIFFRACTOMETRY
    Publication number: 20120014508
    Abstract: A method for analysis includes directing a converging beam of X-rays toward a surface of a sample and sensing the X-rays that are diffracted from the sample while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum of the sample. The diffraction spectrum is corrected to compensate for a non-uniform property of the converging beam.
    Type: Application
    Filed: July 12, 2011
    Publication date: January 19, 2012
    Applicant: JORDAN VALLEY SEMICONDUCTORS LTD.
    Inventors: Matthew Wormington, Alexander Krohmal, David Berman, Gennady Openganden