Abstract: A semiconductor element suitable for use in the display region of a liquid crystal display or for use in the drive circuit region for driving the display region is comprised of first, second, third and fourth electrodes; a pair of first conducting type semiconductor layers separated from each other and connected to the second and the third electrodes, respectively; an intrinsic semiconductor layer connected to the pair of the first conductivity type semiconductor layers; and a second conductivity type semiconductor layer formed on the intrinsic semiconductor layer, wherein an insulating film is interposed between the first electrode and the intrinsic semiconductor layer, and the fourth electrode is formed on the second conductivity type semiconductor layer formed on the intrinsic semiconductor layer.

Abstract: An active matrix type liquid crystal display system having a liquid crystal composition being interposed between a first and a second substrates, a plurality of pixel parts being constructed with a plurality of scanning electrodes and a plurality of signal electrodes arranged in a matrix, a switching element being provided in each of the pixel parts, wherein the switching element is connected to a pixel electrode, the pixel electrode and a common electrode being so constructed as operable in keeping the major axes of the liquid crystal molecules parallel to the surface of the substrate. In the pixel part, the signal electrode and the pixel electrode is formed and a shield electrode is formed between the signal electrode and the pixel electrode. The system requires no transparent electrode, being excellent in visual angle characteristic, being high in contrast, being small in cross-talk producing probability.

Abstract: An active matrix type liquid crystal display system having a liquid crystal composition being interposed between a first and a second substrates, a plurality of pixel parts being constructed with a plurality of scanning electrodes and a plurality of signal electrodes arranged in a matrix, a switching element being provided in each of the pixel parts, wherein the switching element is connected to a pixel electrode, the pixel electrode and a common electrode facing being so constructed as to be operable in keeping the major axes of the liquid crystal molecules parallel to the surface of the substrate. In pixel part, the signal electrode and the pixel electrode is formed and a shield electrode is formed between the signal electrode and the pixel electrode. The system requires no transparent electrode, being excellent in visual angle characteristic, being high in contrast, being small in cross-talk producing probability.

Abstract: A liquid crystal display device and a manufacturing method therefor are provided where the number of processes for manufacturing TFT substrates can be decreased and a high production yield can be attained. To attain these objects, an image signal bus-line includes at least a transparent conductive film and a semiconductor layer. A pattern of the transparent conductive film extends up to a thin film transistor to form its drain electrode, and a pattern of a semiconductor layer extends up to the transistor to form its source electrode. By virtue of these arrangements, the thin film transistor substrate can be manufactured using as little as three or four photolithography processes.

Abstract: The liquid crystal display device has a plurality of pixel elements, the optical transmissivity of which is varied by suitable electrical signals. The liquid crystal display device has electrodes which apply electric fields to a liquid crystal layer, the electric fields having components in a direction generally parallel to the liquid crystal layer. Each pixel element has at least one pixel electrode which extends in a common direction as signal electrodes and common electrodes which extend over several pixel elements. The common electrodes may be on the same side of the liquid crystal layer as the pixel and signal electrodes, or they may be on opposite sides. Each pixel may have two pixel electrodes with the signal electrode therebetween and there are then a pair of common electrodes with the pixel electrodes therebetween. The common electrodes may be common to adjacent pixel elements. The pixel electrodes and the common electrodes may be separated by an insulating film.

Abstract: First pixel electrodes and scan signal electrodes are formed in the same plane, and the first pixel electrodes and video signal electrodes are insulated and separated from each other by gate SiN films. Additional capacitors are formed by second pixel electrodes which are connected to the first pixel electrodes through apertures formed in the gate SiN films and which may be cut by a laser beam, and the scan signal electrodes. Thus, a short circuit defect between the electrodes is prevented, a highly reliable additional capacitor is attained, break of wiring is reduced and an aperture factor can be improved by expanding a width of the first pixel electrode. Thus, a multi-tonality and highly fine liquid crystal display device can be manufactured with a high yield.

Abstract: A liquid crystal display device has a plurality of pixel elements, the optical transmissivity of which is varied by suitable electrical signals. The liquid crystal display device has electrodes which apply electric fields to a liquid crystal layer, the electric fields having components in a direction generally parallel to the liquid crystal layer. Each pixel element has at least one pixel electrode which extends in a common direction as a signal electrode and common electrodes which extend over several pixel elements. The common electrodes may be on the same side of the liquid crystal layer as the pixel and signal electrodes, or they may be on opposite sides. Each pixel may have two pixel electrodes with the signal electrode disposed therebetween, and there are then a pair of common electrodes with the pixel electrodes therebetween. The common electrodes may be common to adjacent pixel elements. The pixel electrodes and the common electrodes may be separated by an insulating film.

Abstract: A thin-film semiconductor device includes a plurality of thin-film semiconductor elements each having a gate electrode formed on a substrate, an insulating film formed on the gate electrode, a semiconductor film formed on the insulating film and doped with an n-type impurity, and source and drain electrodes formed on the semiconductor film and separated from each other, that region of the semiconductor film which corresponds to a gap between the source electrode and the drain electrode, being doped with a p-type impurity so that the p-type impurity concentration is equal to or greater than the n-type impurity concentration, to form an intrinsic layer, scanning-signal transmitting electrode lines each formed so as to connect the gate electrodes of some of the thin-film semiconductor elements, video-signal transmitting electrode lines each formed so as to connect the drain electrodes of some of the thin-film semiconductor elements, and pixel electrodes each connected to the source electrode of one of the thin-f

Abstract: This invention relates to a thin film semiconductor device and a method for fabricating it, and more particularly a thin film semiconductor device suitably applicable to a display device in an active matrix system and a method for fabricating it. In this invention, the structure of a thin film semiconductor device for improving the characteristic thereof and particularly the structure relative to the dominant orientation of a poly-Si film as an active layer of a thin film transistor (TFT) is disclosed. A method for fabricating a thin film semiconductor device which is capable of forming a poly-Si film at a relatively low process temperature is disclosed. Further, a display device in an active matrix system which provided high performance and high image quality is disclosed. The poly-Si film having a dominant orientation of (111) is formed by forming a poly-Si film on the semiconductor substrate at a temperature up to 570.degree. C. and annealing the substrate at a temperature up to 640.degree. C.

Abstract: A method for fabricating an active matrix substrate is disclosed which includes the following steps: forming an island region of a first semiconductor film on a prescribed insulating substrate; forming a first insulating film and a second semiconductor film on said first insulating film; forming a second insulating film on said second semiconductor film and thereafter forming a prescribed pattern of the second insulating film; depositing prescribed metal on the pattern and thereafter forming a compound of the second semiconductor film and the metal; removing unreacted portion of the metal; and etching said second semiconductor film and said first insulating film using said compound as a mask.