Abstract: A structure is constructed having a through hole in a substrate of silicon or the like by a decreased number of steps in production and with improved reliability. A silicon nitride film is formed in contact with an upper surface of a silicon oxide film at least on a portion of the substrate near the edge of a through hole, thereby improving step coverage of the silicon nitride film. The silicon oxide film and silicon nitride film function as a membrane during formation of the through hole by etching from the back side of the substrate.

Abstract: A structure is constructed with a through hole in a substrate of silicon or the like by the decreased number of steps in production and with improved reliability. A silicon nitride film 104 is formed in contact with an upper surface of a silicon oxide film 103 at least in a side portion of a through hole 120, thereby improving step coverage of the silicon nitride film 104. The silicon oxide film 103 and silicon nitride film 104 function as a membrane during formation of the through hole 120 by etching from the back side of substrate 100.

Abstract: A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.

Abstract: An alignment method for a semiconductor device having a conductive thin film on a conductive substrate surface across an insulation film, comprises steps of: forming in the insulation film, at least two apertures exposing the substrate surface therein; selectively depositing a conductive material in the apertures thereby forming a stepped portion in at least one of said apertures; and forming the conductive thin film at least on said insulation film. The alignment is conducted utilizing the stepped portion.

Abstract: A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.

Abstract: An alignment method for a semiconductor device having a conductive thin film on a conductive substrate surface across an insulation film, comprises steps of:a) forming in the insulation film, at least two apertures exposing the substrate surface therein;b) selectively depositing a conductive material in the apertures thereby forming a stepped portion in at least one of said apertures; andc) forming the conductive thin film at least on said insulation film. The alignment is conducted utilizing the stepped portion.

Abstract: A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.

Abstract: A method for producing a substrate for a recording head wherein a plurality of electro-thermal converting elements, a plurality of driving functional elements for respectively driving the electro-thermal converting elements and a plurality of wiring electrodes for respectively connecting each of the driving functional elements and each of the electro-thermal converting elements are formed on a supporting member by photolithography comprises forming the wiring electrodes by etching a material layer for the wiring electrodes while etchingwise removing a photoresist for masking the material layer for the wiring electrodes.