Patents by Inventor Geoffrey C-F Yeap

Geoffrey C-F Yeap has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6846716
    Abstract: A semiconductor device has recesses formed in the substrate during removal of the anti-reflective coating (ARC) because these recess locations are exposed during the etching of the ARC. Although the etchant is chosen to be selective between the ARC material and the substrate material, this selectivity is limited so that recesses do occur. A problem associated with the formation of these recesses is that the source/drains have further to diffuse to become overlapped with the gate. The result is that the transistors may have reduced current drive. The problem is avoided by waiting to perform the ARC removal until at least after formation of a sidewall spacer around the gate. The consequent recess formation thus occurs further from the gate, which results in reducing or eliminating the impediment this recess can cause to the source/drain diffusion that desirably extends to overlap with the gate.
    Type: Grant
    Filed: December 16, 2003
    Date of Patent: January 25, 2005
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Geoffrey C-F Yeap, Srinivas Jallepalli, Yongjoo Jeon, James David Burnett, Rana P. Singh, Paul A. Grudowski
  • Publication number: 20040124450
    Abstract: A semiconductor device has recesses formed in the substrate during removal of the anti-reflective coating (ARC) because these recess locations are exposed during the etching of the ARC. Although the etchant is chosen to be selective between the ARC material and the substrate material, this selectivity is limited so that recesses do occur. A problem associated with the formation of these recesses is that the source/drains have further to diffuse to become overlapped with the gate. The result is that the transistors may have reduced current drive. The problem is avoided by waiting to perform the ARC removal until at least after formation of a sidewall spacer around the gate. The consequent recess formation thus occurs further from the gate, which results in reducing or eliminating the impediment this recess can cause to the source/drain diffusion that desirably extends to overlap with the gate.
    Type: Application
    Filed: December 16, 2003
    Publication date: July 1, 2004
    Inventors: Geoffrey C-F Yeap, Srinivas Jallepalli, Yongjoo Jeon, James David Burnett, Rana P. Singh, Paul A. Grudowski
  • Patent number: 6753242
    Abstract: A semiconductor device has recesses formed in the substrate during removal of the anti-reflective coating (ARC) because these recess locations are exposed during the etching of the ARC. Although the etchant is chosen to be selective between the ARC material and the substrate material, this selectivity is limited so that recesses do occur. A problem associated with the formation of these recesses is that the source/drains have further to diffuse to become overlapped with the gate. The result is that the transistors may have reduced current drive. The problem is avoided by waiting to perform the ARC removal until at least after formation of a sidewall spacer around the gate. The consequent recess formation thus occurs further from the gate, which results in reducing or eliminating the impediment this recess can cause to the source/drain diffusion that desirably extends to overlap with the gate.
    Type: Grant
    Filed: March 19, 2002
    Date of Patent: June 22, 2004
    Assignee: Motorola, Inc.
    Inventors: Geoffrey C-F Yeap, Srinivas Jallepalli, Yongjoo Jeon
  • Publication number: 20030181028
    Abstract: A semiconductor device has recesses formed in the substrate during removal of the anti-reflective coating (ARC) because these recess locations are exposed during the etching of the ARC. Although the etchant is chosen to be selective between the ARC material and the substrate material, this selectivity is limited so that recesses do occur. A problem associated with the formation of these recesses is that the source/drains have further to diffuse to become overlapped with the gate. The result is that the transistors may have reduced current drive. The problem is avoided by waiting to perform the ARC removal until at least after formation of a sidewall spacer around the gate. The consequent recess formation thus occurs further from the gate, which results in reducing or eliminating the impediment this recess can cause to the source/drain diffusion that desirably extends to overlap with the gate.
    Type: Application
    Filed: March 19, 2002
    Publication date: September 25, 2003
    Inventors: Geoffrey C-F Yeap, Srinivas Jallepalli, Yongjoo Jeon, James David Burnett, Rana P. Singh, Paul A. Grudowski