Patents by Inventor Geoffrey Hohn

Geoffrey Hohn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9828672
    Abstract: Methods and apparatus for remote plasma processing are provided. In various embodiments, a reaction chamber is conditioned by forming a low recombination material coating on interior chamber surfaces. The low recombination material helps minimize the degree of radical recombination that occurs within the reaction chamber when the reaction chamber is used to process substrates. During processing on substrates, the low recombination material may become covered by relatively higher recombination material (e.g., as a byproduct of the substrate processing), which results in a decrease in the amount of radicals available to process the substrate over time. The low recombination material coating may be reconditioned through exposure to an oxidizing plasma, which acts to reform the low recombination material coating. The reconditioning process may occur periodically as additional processing occurs on substrates.
    Type: Grant
    Filed: May 14, 2015
    Date of Patent: November 28, 2017
    Assignee: Lam Research Corporation
    Inventors: Bhadri N. Varadarajan, Bo Gong, Rachel E. Batzer, Huatan Qiu, Bart J. van Schravendijk, Geoffrey Hohn
  • Publication number: 20160281230
    Abstract: Certain embodiments herein relate to methods of conditioning a reaction chamber that is used for remote plasma processing. Other embodiments herein relate to apparatus used for remote plasma processing. In various embodiments, a reaction chamber is conditioned by forming a low recombination material coating on interior chamber surfaces. The low recombination material helps minimize the degree of radical recombination that occurs within the reaction chamber when the reaction chamber is used to process substrates. During processing on substrates, the low recombination material may become covered by relatively higher recombination material (e.g., as a byproduct of the substrate processing), which results in a decrease in the amount of radicals available to process the substrate over time. The low recombination material coating may be reconditioned through exposure to an oxidizing plasma, which acts to reform the low recombination material coating.
    Type: Application
    Filed: May 14, 2015
    Publication date: September 29, 2016
    Inventors: Bhadri N. Varadarajan, Bo Gong, Rachel E. Batzer, Huatan Qiu, Bart J. van Schravendijk, Geoffrey Hohn