Patents by Inventor Geoffrey J. Davies

Geoffrey J. Davies has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5401283
    Abstract: A synthetic diamond or cubic boron nitride particle is characterized by containing two or more stable isotopes of an element present in a ratio which is different to the ratio in which the isotopes exist in nature. The diamond or cubic boron nitride particle thus has a fingerprint. A preferred example of the element is nitrogen.
    Type: Grant
    Filed: October 14, 1993
    Date of Patent: March 28, 1995
    Inventors: Henry B. Dyer, Geoffrey J. Davies, Robert C. Burns
  • Patent number: 5130549
    Abstract: Cubic boron nitride having an impurity profile as set out below has been found to exhibit excellent thermoluminescent properties with a high gamma radiation sensitivity and low light sensitivity:______________________________________ Impurity Content - less than ______________________________________ Carbon 1100 ppm Oxygen 1500 ppm Silicon 100 ppm Phosphorus 30 ppm Titanium 30 ppm Beryllium 1 ppm ______________________________________
    Type: Grant
    Filed: March 14, 1990
    Date of Patent: July 14, 1992
    Inventors: Geoffrey J. Davies, Tom L. Nam, Rex J. Keddy, Lesley K. Hedges
  • Patent number: 4883648
    Abstract: A method is provided for producing large cubic boron nitride crystals having the size of 0.1 carat or larger.
    Type: Grant
    Filed: July 29, 1987
    Date of Patent: November 28, 1989
    Inventors: Geoffrey J. Davies, Lesley K. Hedges, Stuart H. Robertson