Patents by Inventor Geoffrey L. Bakker

Geoffrey L. Bakker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor passivation deposition process for interfacial adhesion
    Patent number: 7202568
    Abstract: A method of passivating an integrated circuit (IC) is provided. An insulating layer is formed onto the IC. An adhesion layer is formed onto a surface of the insulating layer by treating the surface of the insulating layer with a gas. A first passivation layer is formed upon the adhesion layer, the first passivation layer and the gas including at least one common chemical element.
    Type: Grant
    Filed: November 6, 2001
    Date of Patent: April 10, 2007
    Assignee: Intel Corporation
    Inventors: Krishna Seshan, M. Lawrence A. Dass, Geoffrey L. Bakker
  • Method for fabricating microelectronic image projection devices
    Publication number: 20040125247
    Abstract: A method for fabricating a microelectronic image projection device. One or more nitride dams are formed upon the substrate of the device surrounding the active pixel area. The nitride dams help to contain the liquid crystal and confine the epoxy sealant. In alternative embodiments one or more nitride pillars are formed on the substrate to support the cover glass and maintain the distance between the cover glass and the active pixel area of the substrate. The nitride dams and pillars may be formed on the substrate through an ion implantation method in which HDP nitride is implanted with, for example, silicon ions. The ion implantation causes those areas of the nitride that are implanted with ions to etch more slowly than those areas that are not implanted with ions. This etch rate differential allows formation of the nitride formations with a non-contact single mask etching process.
    Type: Application
    Filed: December 26, 2002
    Publication date: July 1, 2004
    Inventors: Krishna Seshan, Chaoyang Li, Geoffrey L. Bakker, Lawrence Dass
  • Semiconductor passivation deposition process for interfacial adhesion
    Publication number: 20020050629
    Abstract: A method of passivating an integrated circuit (IC) is provided. An insulating layer is formed onto the IC. An adhesion layer is formed onto a surface of the insulating layer by treating the surface of the insulating layer with a gas. A first passivation layer is formed upon the adhesion layer, the first passivation layer and the gas including at least one common chemical element.
    Type: Application
    Filed: November 6, 2001
    Publication date: May 2, 2002
    Inventors: Krishna Seshan, M. Lawrence A. Dass, Geoffrey L. Bakker
  • Semiconductor passivation deposition process for interfacial adhesion
    Patent number: 6352940
    Abstract: A method of passivating an integrated circuit (IC) is provided. An insulating layer is formed onto the IC. An adhesion layer is formed onto a surface of the insulating layer by treating the surface of the insulating layer with a gas and gas plasma. A first passivation layer is formed upon the adhesion layer, the first passivation layer and the gas and gas plasma including at least one common chemical element.
    Type: Grant
    Filed: June 26, 1998
    Date of Patent: March 5, 2002
    Assignee: Intel Corporation
    Inventors: Krishna Seshan, M. Lawrence A. Dass, Geoffrey L. Bakker