Abstract: A lithographic method includes patterning a beam of radiation with a patterning device. The patterning device includes at least two image patterning portions and at least two metrology mark patterning portions. The method also includes projecting at least two image portions of the patterned beam of radiation sequentially onto target portions of a substrate such that the projected image portions are substantially adjacent to each other on the substrate and collectively form a composite image on the substrate. The method also includes projecting a metrology mark onto the substrate outside of the area of the composite image at the same time as projecting each of at least two of the image portions, and measuring the alignment of the metrology marks to determine the relative positions of the at least two image portions.

Abstract: A substrate bonding system has a first and a second substrate table for holding a first substrate and a second substrate, respectively, and a controller. The first substrate includes a first device having first contact pads and the second substrate a second device having second contact pads. The wafer bonding system is arranged to bond the first and second device in such a way that a circuit may be formed by the first and second device. The first and second substrate tables each include a position sensor arranged to measure an optical signal generated on an alignment marker of the first and second substrate, respectively. The first and second substrate tables include a first and second actuator respectively that is arranged to alter a position and orientation of the respective substrate table.

Abstract: A method of calculating an angle of an alignment beam of an alignment system in, for example, a lithographic projection apparatus includes measuring the position of at least two alignment marks. These two alignment marks are manufactured on a measurement substrate or they can be arranged on a reference on a substrate table of the lithographic apparatus itself. The second mark is covered by a transparent plate. Then, the position of the two marks is measured using the alignment system. Due to refraction of the alignment beam in the transparent plate, the alignment beam is shifted when returning to the alignment system. The shift of the alignment beam results in a deviated measured position of the second mark. This shift can be calculated because the distance between the two marks is known. The shift is used to calculate the angle of the alignment beam. The angle can be used to improve a FTBA error verification method.

Abstract: A lithographic method includes patterning a beam of radiation with a patterning device. The patterning device includes at least two image patterning portions and at least two metrology mark patterning portions. The method also includes projecting at least two image portions of the patterned beam of radiation sequentially onto target portions of a substrate such that the projected image portions are substantially adjacent to each other on the substrate and collectively form a composite image on the substrate. The method also includes projecting a metrology mark onto the substrate outside of the area of the composite image at the same time as projecting each of at least two of the image portions, and measuring the alignment of the metrology marks to determine the relative positions of the at least two image portions.