Abstract: A spiral phase plate, according to one embodiment, for generating a Laguerre Gaussian beam by reflecting an incident beam emitted from a light source, may comprise: a first quadrant area in which the step height increase rate per unit angle decreases progressively in one direction from the point with the lowest step height to the point with the highest step height; and a second quadrant area in which the step height increase rate per unit angle increases progressively in the one direction.

Abstract: A magnetic memory device includes first and second upper insulating layers and a first mold layer sequentially stacked on a first substrate region; a first primary and first secondary wiring structure spaced apart in a first direction in the first upper insulating layer; a second wiring structure on the first primary wiring structure and a reference wiring structure on the first secondary wiring structure, in the second upper insulating layer; a first structure on the second wiring structure; a second structure on the reference wiring structure; a lower electrode contact between the second wiring structure and the first structure, and not between the reference wiring structure and the second structure, in the first mold layer; a bit line structure on the first structure; and a reference bit line structure on the second structure. The first and second structure include a lower electrode, MTJ structure, intermediate electrode, and upper electrode.

Abstract: A magnetic memory device includes a substrate having a first mold insulating film on a first region thereof, and a first structure on the substrate. The first structure includes a lower electrode, a magnetic tunnel junction (MTJ) structure on the lower electrode, and an upper electrode on the MTJ structure. A capping film is provided, which extends on the first mold insulating film and sidewalls of the first structure. A first etching stop layer is provided on the first structure and the capping film. A second mold insulating film is provided, which at least partially fills a space between the capping film and the first etching stop layer. A first metal structure is provided, which extends through a portion of the first etching stop layer and a portion of the second mold insulating film, and is electrically coupled to the MTJ structure.