Abstract: A spiral phase plate, according to one embodiment, for generating a Laguerre Gaussian beam by reflecting an incident beam emitted from a light source, may comprise: a first quadrant area in which the step height increase rate per unit angle decreases progressively in one direction from the point with the lowest step height to the point with the highest step height; and a second quadrant area in which the step height increase rate per unit angle increases progressively in the one direction.

Abstract: The inventive concept provides a substrate treating method. The substrate treating method includes treating an edge region of a substrate using a plasma; and acquiring an image to be determined by imaging a substrate on which a treatment has been completed in the treating the edge region, comparing the image to be determined with an image stored in a database, and determining whether a substrate treated in the treating the edge region is defective or not, and wherein the image stored in the database is a defective image of a substrate which has been determined as defective, which is previously stored in the database in the acquiring the image to be determined.

Abstract: A substrate processing apparatus are provided. The substrate processing apparatus allows a supply flow rate per unit time for process gas supplied to the central area of a substrate to be greater than a supply flow rate per unit time for process gas supplied to an edge area of the substrate, when processing the edge area of the substrate supported by the chuck.

Abstract: An apparatus for processing a substrate is provided. The apparatus for processing the substrate includes a housing having a process space, a gas supply unit to supply gas into the process space, a support unit including a chuck to support the substrate in the process space and a lower electrode to surround the chuck when viewed from a top, a temperature adjusting plate provided in the housing, a dielectric plate unit coupled to the temperature adjusting plate, and having a dielectric plate disposed in opposite to the substrate supported by the support unit in the process space, and an upper electrode unit coupled to the temperature adjusting plate, and having an upper electrode disposed in opposition to the lower electrode. The dielectric plate unit includes a first base disposed between the dielectric plate and the temperature adjusting plate.

Abstract: An apparatus for processing a substrate is provided. The apparatus for processing the substrate includes a housing having a process space, a gas supply unit to supply gas into the process space, a support unit including a chuck to support the substrate in the process space and a lower electrode to surround the chuck when viewed from a top, a temperature adjusting plate provided in the housing, a dielectric plate unit coupled to the temperature adjusting plate, and having a dielectric plate disposed in opposite to the substrate supported by the support unit in the process space, and an upper electrode unit coupled to the temperature adjusting plate, and having an upper electrode disposed in opposition to the lower electrode. The dielectric plate unit includes a first base disposed between the dielectric plate and the temperature adjusting plate.

Abstract: A substrate processing apparatus are provided. The substrate processing apparatus allows a supply flow rate per unit time for process gas supplied to the central area of a substrate to be greater than a supply flow rate per unit time for process gas supplied to an edge area of the substrate, when processing the edge area of the substrate supported by the chuck.