Abstract: A variable resistance memory device includes first conductive lines positioned above a substrate. Each of the first conductive lines extends in a first direction and a second direction. Second conductive lines extend in the first direction and the second direction. The second conductive lines are positioned above the first conductive lines. A memory is positioned between the first and second conductive lines. The memory unit overlaps the first and second conductive lines in a third direction. The memory unit includes a first electrode, a variable resistance pattern positioned on the first electrode, and a second electrode positioned on the variable resistance pattern. A selection pattern is positioned on each memory unit. A third electrode is positioned above the selection pattern. The third electrode is in direct contact with a lower surface of each of the second conductive lines.

Abstract: A variable resistance memory device may include: a first electrode layer; a selection device layer on the first electrode layer, the selection device layer including a chalcogenide switching material consisting essentially of germanium (Ge), selenium (Se), and antimony (Sb), wherein a content of the Ge is less than a content of the Se based on an atomic weight; a second electrode layer on the selection device layer; a variable resistance layer on the second electrode layer, the variable resistance layer including a chalcogenide material; and a third electrode layer on the variable resistance layer.

Abstract: A semiconductor device includes a first memory cell, a second memory cell, a first capping film, and a second capping film. The first memory cell includes a first ovonic threshold switch (OTS) on a first phase change memory. The second memory cell includes a second OTS on a second phase change memory. The first capping film is on side surfaces of the first and second memory cells. The second capping film is on the first capping film and fills a space between the first and second memory cells.

Abstract: Disclosed is a tire with reduced cavity noise including an adhesive agent layer applied to an inside of an inner liner and a sound absorber layer attached to the adhesive agent layer, wherein the adhesive agent layer includes poly(ether-urethane) containing alkoxysilane at both ends thereof. The tire with reduced cavity noise is stable without causing separation of a sound absorber even upon heating and deformation during driving.

Abstract: A curling analysis method includes a step of providing a game information input interface for inputting game information in an order of progress of a curling game, a step of outputting analysis information according to the input game information based on stored accumulative curling game information, and a step of visually displaying the output analysis information. Accordingly, an interface that takes into account of convenience of a user is provided and an efficient curling analysis result is provided to assist in improvement of curling performance.

Abstract: A mobile terminal for displaying curling game information is provided. The mobile terminal includes a first screen configured to receive and display the curling game information, a second screen configured to display statistical information based on pre-stored statistical analysis information according to the curling game information which is input by a user, and a computing component coupled to both of the first screen and the second screen. When a first team and a second team are in a curling game, the pre-stored statistical analysis information include at least one of the followings delivery information as to which team delivers a first stone of each end of the curling game, score distribution information, delivery type information, performance information for each delivery, winning rate information for each team as to the each end of the curling game, and game record information.

Abstract: Disclosed is a tire with reduced cavity noise including an adhesive agent layer applied to an inside an inner liner, and a sound absorber layer attached to the adhesive agent layer, wherein the adhesive agent layer includes polyether containing an alkoxysilane substituent group in a main chain, rather than, at an end. The tire with reduced cavity noise is stable without causing separation of a sound absorber even heating and deformation during driving.

Abstract: A variable resistance memory device includes first conductive lines positioned above a substrate. Each of the first conductive lines extends in a first direction and a second direction. Second conductive lines extend in the first direction and the second direction. The second conductive lines are positioned above the first conductive lines. A memory is positioned between the first and second conductive lines. The memory unit overlaps the first and second conductive lines in a third direction. The memory unit includes a first electrode, a variable resistance pattern positioned on the first electrode, and a second electrode positioned on the variable resistance pattern. A selection pattern is positioned on each memory unit. A third electrode is positioned above the selection pattern. The third electrode is in direct contact with a lower surface of each of the second conductive lines.

Abstract: Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.

Abstract: A variable resistance memory device may include: a first electrode layer; a selection device layer on the first electrode layer, the selection device layer including a chalcogenide switching material consisting essentially of germanium (Ge), selenium (Se), and antimony (Sb), wherein a content of the Ge is less than a content of the Se based on an atomic weight; a second electrode layer on the selection device layer; a variable resistance layer on the second electrode layer, the variable resistance layer including a chalcogenide material; and a third electrode layer on the variable resistance layer.

Abstract: A mobile terminal for displaying curling game information is provided. The mobile terminal includes a first screen configured to receive and display the curling game information, a second screen configured to display statistical information based on pre-stored statistical analysis information according to the curling game information which is input by a user, and a computing component coupled to both of the first screen and the second screen. When a first team and a second team are in a curling game, the pre-stored statistical analysis information include at least one of the followings delivery information as to which team delivers a first stone of each end of the curling game, score distribution information, delivery type information, performance information for each delivery, winning rate information for each team as to the each end of the curling game, and game record information.

Abstract: A curling analysis method includes a step of providing a game information input interface for inputting game information in an order of progress of a curling game, a step of outputting analysis information according to the input game information based on stored accumulative curling game information, and a step of visually displaying the output analysis information. Accordingly, an interface that takes into account of convenience of a user is provided and an efficient curling analysis result is provided to assist in improvement of curling performance.

Abstract: According to example embodiments, a nonvolatile memory cell includes a first electrode and a second electrode, a resistance change film between the first electrode and the second electrode, and a first barrier film contacting the second electrode. The resist change film contains oxygen ions and contacts the first electrode. The first barrier film is configured to reduce (and/or block) the outflow of the oxygen ions from the resistance change film.

Abstract: A system and method for controlling voltage at a point of common coupling of a wind farm including a plurality of wind turbines is provided. The method includes: calculating a first voltage error value, which is a difference between a reference voltage value of the point of common coupling and an actual voltage value of the point of common coupling; calculating a compensation reference voltage value based on the first voltage error value; calculating a second voltage error value by subtracting a voltage value of an output terminal of a wind turbine from a sum of a reference voltage value of the wind turbine and the compensation reference voltage value; calculating a reactive power compensation value corresponding to the second voltage error value; and injecting a reactive current corresponding to the reactive current compensation value into a power grid.

Abstract: A system and method for controlling voltage at a point of common coupling of a wind farm including a plurality of wind turbines is provided. The method includes: calculating a first voltage error value, which is a difference between a reference voltage value of the point of common coupling and an actual voltage value of the point of common coupling; calculating a compensation reference voltage value based on the first voltage error value; calculating a second voltage error value by subtracting a voltage value of an output terminal of a wind turbine from a sum of a reference voltage value of the wind turbine and the compensation reference voltage value; calculating a reactive power compensation value corresponding to the second voltage error value; and injecting a reactive current corresponding to the reactive current compensation value into a power grid.

Abstract: According to example embodiments, a nonvolatile memory cell includes a first electrode and a second electrode, a resistance change film between the first electrode and the second electrode, and a first barrier film contacting the second electrode. The resist change film contains oxygen ions and contacts the first electrode. The first barrier film is configured to reduce (and/or block) the outflow of the oxygen ions from the resistance change film.

Abstract: According to example embodiments, a nonvolatile memory cell includes a first electrode and a second electrode, a resistance change film between the first electrode and the second electrode, and a first barrier film contacting the second electrode. The resist change film contains oxygen ions and contacts the first electrode. The first barrier film is configured to reduce (and/or block) the outflow of the oxygen ions from the resistance change film.

Abstract: According to example embodiments, a nonvolatile memory cell includes a first electrode and a second electrode, a resistance change film between the first electrode and the second electrode, and a first barrier film contacting the second electrode. The resist change film contains oxygen ions and contacts the first electrode. The first barrier film is configured to reduce (and/or block) the outflow of the oxygen ions from the resistance change film.

Abstract: A module substrate may include a substrate body on which a plurality of chip mounting regions having connection pads are defined. Repair structures may be respectively formed, or placed, in the chip mounting regions. Each repair structure includes conductive layer patterns formed over the connection pads in each chip mounting region, an insulation layer pattern formed over the substrate body in each chip mounting region in such a way as to expose the conductive layer patterns, plastic conductive members formed between the connection pads and the conductive layer patterns, and a plastic insulation member formed between the substrate body and the insulation layer pattern in each chip mounting region.

Abstract: A semiconductor device has two transistors of different structure from each other. One of transistors is P-type and the other is N-type. One of the transistors includes a gate structure in which a polysilicon layer contacts a gate insulation film while the other transistor includes a gate structure in which a metal layer contacts a gate insulation film.