Patents by Inventor Geon Wook YOO

Geon Wook YOO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9871164
    Abstract: A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, and a plurality of light emitting nanostructures. The base layer includes a first conductivity type semiconductor. The insulating layer is disposed on the base layer and has a plurality of openings through which regions of the base layer are exposed. The light emitting nanostructures are respectively disposed on the exposed regions of the base layer and include a plurality of nanocores having a first conductivity type semiconductor and having side surfaces provided as the same crystal planes. The light emitting nanostructures include an active layer and a second conductivity type semiconductor layer sequentially disposed on surfaces of the nanocores. Upper surfaces of the nanocores are provided as portions of upper surfaces of the light emitting nanostructures, and the upper surfaces of the light emitting nanostructures are substantially planar with each other.
    Type: Grant
    Filed: June 13, 2016
    Date of Patent: January 16, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam Goo Cha, Dong Ho Kim, Geon Wook Yoo
  • Patent number: 9853185
    Abstract: There is provided a method for manufacturing a nanostructure semiconductor light emitting device, including: forming a mask having a plurality of openings on a base layer; growing a first conductivity-type semiconductor layer on exposed regions of the base layer such that the plurality of openings are filled, to form a plurality of nanocores; partially removing the mask such that side surfaces of the plurality of nanocores are exposed; heat-treating the plurality of nanocores after partially removing the mask; sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores to form a plurality of light emitting nanostructures, after the heat treatment; and planarizing upper parts of the plurality of light emitting nanostructures such that upper surfaces of the nanocores are exposed.
    Type: Grant
    Filed: October 19, 2016
    Date of Patent: December 26, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam-Goo Cha, Dong-Ho Kim, Geon-Wook Yoo
  • Patent number: 9660139
    Abstract: A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, a plurality of light emitting nanostructures, and a contact electrode. The base layer is formed of a first conductivity-type semiconductor material. The insulating layer is disposed on the base layer. Each light emitting nanostructure is disposed in a respective opening of a plurality of openings in the base layer, and includes a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The contact electrode is spaced apart from the insulating layer and is disposed on a portion of the second conductivity-type semiconductor layer. A tip portion of the light emitting nanostructure has crystal planes different from those on side surfaces of the light emitting nanostructure.
    Type: Grant
    Filed: February 8, 2016
    Date of Patent: May 23, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Geon Wook Yoo, Kyung Wook Hwang, Yong Min Kim, Sung Hyun Sim
  • Patent number: 9601665
    Abstract: A nanostructure semiconductor light emitting device may includes: a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on an upper surface of the base layer, each of which including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; and a contact electrode disposed on the plurality of light emitting nanostructures, wherein a tip portion of each of light emitting nanostructures disposed on the first region may not be covered with the contact electrode, and a tip portion of each of light emitting nanostructures disposed on the second region may be covered with the contact electrode.
    Type: Grant
    Filed: August 17, 2015
    Date of Patent: March 21, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung Hyun Sim, Geon Wook Yoo, Mi Hyun Kim, Dong Hoon Lee, Jin Bock Lee, Je Won Kim, Hye Seok Noh, Dong Kuk Lee
  • Patent number: 9583672
    Abstract: A nano-structured light-emitting device including a first semiconductor layer; a nano structure formed on the first semiconductor layer. The nano structure includes a nanocore, and an active layer and a second semiconductor layer that are formed on a surface of the nanocore, and of which the surface is planarized. A conductive layer surrounds sides of the nano structure, a first electrode is electrically connected to the first semiconductor layer and a second electrode is electrically connected to the conductive layer.
    Type: Grant
    Filed: October 8, 2015
    Date of Patent: February 28, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam-goo Cha, Dong-ho Kim, Geon-wook Yoo, Dong-hoon Lee
  • Publication number: 20170040489
    Abstract: There is provided a method for manufacturing a nanostructure semiconductor light emitting device, including: forming a mask having a plurality of openings on a base layer; growing a first conductivity-type semiconductor layer on exposed regions of the base layer such that the plurality of openings are filled, to form a plurality of nanocores; partially removing the mask such that side surfaces of the plurality of nanocores are exposed; heat-treating the plurality of nanocores after partially removing the mask; sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores to form a plurality of light emitting nanostructures, after the heat treatment; and planarizing upper parts of the plurality of light emitting nanostructures such that upper surfaces of the nanocores are exposed.
    Type: Application
    Filed: October 19, 2016
    Publication date: February 9, 2017
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam-Goo CHA, Dong-Ho KIM, Geon-Wook YOO
  • Patent number: 9559260
    Abstract: There is provided a semiconductor light emitting device 100 including a substructure 101, 120, 130 including at least one light emitting region R1 including a plurality of three-dimensional (3-D) light emitting nanostructures 140 and at least one electrode region R2, R3 including a plurality of locations CP2A, 17A, 17B, 18A, 18B wherein an arrangement of the plurality of three-dimensional (3-D) light emitting nanostructures 140 and the plurality of locations CP2A, 17A, 17B, 18A, 18B are identical.
    Type: Grant
    Filed: May 28, 2015
    Date of Patent: January 31, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong Kuk Lee, Geun Woo Ko, Geon-Wook Yoo, Nam Goo Cha
  • Patent number: 9525100
    Abstract: Provided is a nano-structured light-emitting device including: a first type semiconductor layer; a plurality of nanostructures which are formed on the first type semiconductor layer and include nanocores, and active layers and second type semiconductor layers that enclose surfaces of the nanocores; an electrode layer which encloses and covers the plurality of nanostructures; and a plurality of resistant layers which are formed on the electrode layer and respectively correspond to the plurality of nanostructures.
    Type: Grant
    Filed: February 12, 2016
    Date of Patent: December 20, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Geon-Wook Yoo, Nam-goo Cha, Dong-kuk Lee, Dong-hoon Lee
  • Patent number: 9525102
    Abstract: There is provided a method of manufacturing a nanostructure semiconductor light emitting device including providing a base layer formed of a first conductivity-type semiconductor, forming a mask including an etch stop layer on the base layer, forming a plurality of openings with regions of the base layer exposed therethrough, in the mask; forming a plurality of nanocores by growth of the first conductivity-type semiconductor on the exposed regions of the base layer to fill the plurality of openings, partially removing the mask using the etch stop layer to expose side portions of the plurality of nanocores, and sequentially growth of an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: December 20, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam-Goo Cha, Geon-Wook Yoo, Han-Kyu Seong
  • Patent number: 9508893
    Abstract: There is provided a method for manufacturing a nanostructure semiconductor light emitting device, including: forming a mask having a plurality of openings on a base layer; growing a first conductivity-type semiconductor layer on exposed regions of the base layer such that the plurality of openings are filled, to form a plurality of nanocores; partially removing the mask such that side surfaces of the plurality of nanocores are exposed; heat-treating the plurality of nanocores after partially removing the mask; sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores to form a plurality of light emitting nanostructures, after the heat treatment; and planarizing upper parts of the plurality of light emitting nanostructures such that upper surfaces of the nanocores are exposed.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: November 29, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam-Goo Cha, Dong-Ho Kim, Geon-Wook Yoo
  • Publication number: 20160293797
    Abstract: A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, and a plurality of light emitting nanostructures. The base layer includes a first conductivity type semiconductor. The insulating layer is disposed on the base layer and has a plurality of openings through which regions of the base layer are exposed. The light emitting nanostructures are respectively disposed on the exposed regions of the base layer and include a plurality of nanocores having a first conductivity type semiconductor and having side surfaces provided as the same crystal planes. The light emitting nanostructures include an active layer and a second conductivity type semiconductor layer sequentially disposed on surfaces of the nanocores. Upper surfaces of the nanocores are provided as portions of upper surfaces of the light emitting nanostructures, and the upper surfaces of the light emitting nanostructures are substantially planar with each other.
    Type: Application
    Filed: June 13, 2016
    Publication date: October 6, 2016
    Inventors: NAM GOO CHA, DONG HO KIM, GEON WOOK YOO
  • Patent number: 9385266
    Abstract: A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, and a plurality of light emitting nanostructures. The base layer includes a first conductivity type semiconductor. The insulating layer is disposed on the base layer and has a plurality of openings through which regions of the base layer are exposed. The light emitting nanostructures are respectively disposed on the exposed regions of the base layer and include a plurality of nanocores having a first conductivity type semiconductor and having side surfaces provided as the same crystal planes. The light emitting nanostructures include an active layer and a second conductivity type semiconductor layer sequentially disposed on surfaces of the nanocores. Upper surfaces of the nanocores are provided as portions of upper surfaces of the light emitting nanostructures, and the upper surfaces of the light emitting nanostructures are substantially planar with each other.
    Type: Grant
    Filed: January 27, 2014
    Date of Patent: July 5, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam Goo Cha, Dong Ho Kim, Geon Wook Yoo
  • Patent number: 9379283
    Abstract: A method of manufacturing a nanostructure semiconductor light emitting device including providing a base layer formed of a first conductivity type semiconductor. A mask including an etch stop layer is formed on the base layer. A plurality of openings are formed in the mask so as to expose regions of. A plurality of nanocores are formed by growing the first conductivity type semiconductor on the exposed regions of the base layer to fill the plurality of openings. The mask is partially removed by using the etch stop layer to expose side portions of the plurality of nanocores. An active layer and a second conductivity type semiconductor layer are sequentially grown on surfaces of the plurality of nanocores.
    Type: Grant
    Filed: January 27, 2014
    Date of Patent: June 28, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam Goo Cha, Geon Wook Yoo, Han Kyu Seong
  • Publication number: 20160163922
    Abstract: Provided is a nano-structured light-emitting device including: a first type semiconductor layer; a plurality of nanostructures which are formed on the first type semiconductor layer and include nanocores, and active layers and second type semiconductor layers that enclose surfaces of the nanocores; an electrode layer which encloses and covers the plurality of nanostructures; and a plurality of resistant layers which are formed on the electrode layer and respectively correspond to the plurality of nanostructures.
    Type: Application
    Filed: February 12, 2016
    Publication date: June 9, 2016
    Inventors: Geon-wook YOO, Nam-goo CHA, Dong-koog LEE, Dong-hoon LEE
  • Publication number: 20160155897
    Abstract: A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, a plurality of light emitting nanostructures, and a contact electrode. The base layer is formed of a first conductivity-type semiconductor material. The insulating layer is disposed on the base layer. Each light emitting nanostructure is disposed in a respective opening of a plurality of openings in the base layer, and includes a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The contact electrode is spaced apart from the insulating layer and is disposed on a portion of the second conductivity-type semiconductor layer. A tip portion of the light emitting nanostructure has crystal planes different from those on side surfaces of the light emitting nanostructure.
    Type: Application
    Filed: February 8, 2016
    Publication date: June 2, 2016
    Inventors: Geon Wook YOO, Kyung Wook Hwang, Yong Min Kim, Sung Hyun Sim
  • Patent number: 9287445
    Abstract: A nano-structured light-emitting device includes a plurality of light-emitting nanostructures each having a resistant layer disposed thereon. The device includes a first semiconductor layer of a first conductivity type, and a plurality of nanostructures disposed on the first semiconductor layer. Each nanostructure includes a nanocore, and an active layer and a second semiconductor layer of a second conductivity type that enclose surfaces of the nanocores. An electrode layer encloses and covers the plurality of nanostructures A plurality of resistant layers are disposed on the electrode layer and each corresponds to a respective nanostructure of the plurality of nanostructures.
    Type: Grant
    Filed: December 13, 2013
    Date of Patent: March 15, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Geon-wook Yoo, Nam-goo Cha, Dong-koog Lee, Dong-hoon Lee
  • Patent number: 9287446
    Abstract: A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, a plurality of light emitting nanostructures, and a contact electrode. The base layer is formed of a first conductivity-type semiconductor material. The insulating layer is disposed on the base layer. Each light emitting nanostructure is disposed in a respective opening of a plurality of openings in the base layer, and includes a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The contact electrode is spaced apart from the insulating layer and is disposed on a portion of the second conductivity-type semiconductor layer. A tip portion of the light emitting nanostructure has crystal planes different from those on side surfaces of the light emitting nanostructure.
    Type: Grant
    Filed: January 26, 2015
    Date of Patent: March 15, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Geon Wook Yoo, Kyung Wook Hwang, Yong Min Kim, Sung Hyun Sim
  • Publication number: 20160064607
    Abstract: A nanostructure semiconductor light emitting device may include: a base layer formed of a first conductivity-type semiconductor material; an insulating layer disposed on the base layer and having a plurality of openings exposing portions of the base layer; a plurality of nanocores disposed on the exposed portions of the base layer and formed of a first conductivity-type semiconductor material, each of which including a tip portion having a crystal plane different from that of a side surface thereof; a first high resistance layer disposed on the tip portion of the nanocore and formed of an oxide containing an element which is the same as at least one of elements constituting the nanocore; an active layer disposed on the first high resistance layer and the side surface of the nanocore; and a second conductivity-type semiconductor layer disposed on the active layer.
    Type: Application
    Filed: April 28, 2015
    Publication date: March 3, 2016
    Inventors: Geon Wook YOO, Sung Hyun SIM, Dong Kuk LEE, Hye Seok NOH
  • Publication number: 20160049553
    Abstract: A nanostructure semiconductor light emitting device may includes: a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on an upper surface of the base layer, each of which including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; and a contact electrode disposed on the plurality of light emitting nanostructures, wherein a tip portion of each of light emitting nanostructures disposed on the first region may not be covered with the contact electrode, and a tip portion of each of light emitting nanostructures disposed on the second region may be covered with the contact electrode.
    Type: Application
    Filed: August 17, 2015
    Publication date: February 18, 2016
    Inventors: Sung Hyun SIM, Geon Wook YOO, Mi Hyun KIM, Dong Hoon LEE, Jin Bock LEE, Je Won KIM, Hye Seok NOH, Dong Kuk LEE
  • Publication number: 20160035932
    Abstract: A nano-structured light-emitting device including a first semiconductor layer; a nano structure formed on the first semiconductor layer. The nano structure includes a nanocore, and an active layer and a second semiconductor layer that are formed on a surface of the nanocore, and of which the surface is planarized. A conductive layer surrounds sides of the nano structure, a first electrode is electrically connected to the first semiconductor layer and a second electrode is electrically connected to the conductive layer.
    Type: Application
    Filed: October 8, 2015
    Publication date: February 4, 2016
    Inventors: Nam-goo CHA, Dong-ho KIM, Geon-wook YOO, Dong-hoon LEE