Abstract: A gradient index lens includes at least one optical material, wherein the optical material has at least two extension axes at an angle relative to one another, wherein the optical material has a refractive index gradient along at least one of the extension axes the optical material, and wherein the optical material is formed to be coiled around at least one of the extension axes.

Abstract: The invention concerns a passive terahertz radiation source configured to emit electromagnetic radiation having frequency in the range of 10 GHz to 50 THz and a method for generating a terahertz radiation. The passive terahertz radiation source comprises: a source of a pulsed excitation light; an emitter comprising one or more emitter elements, each emitter element comprising a semiconductor layer being arranged such that at least a portion of a first major surface of said semiconductor layer is exposed to the excitation light, wherein each emitter element is configured such that upon exposure to the excitation light, a gradient of the charge carrier density is generated in the semiconductor layer in the area of transition between a first area of the semiconductor layer and a second area of the semiconductor layer, the gradient being substantially parallel to the first major surface of the semiconductor layer.

Abstract: The invention concerns a passive terahertz radiation source configured to emit electromagnetic radiation having frequency in the range of 10 GHz to 50 THz and a method for generating a terahertz radiation. The passive terahertz radiation source comprises: a source of a pulsed excitation light; an emitter comprising one or more emitter elements, each emitter element comprising a semiconductor layer being arranged such that at least a portion of a first major surface of said semiconductor layer is exposed to the excitation light, wherein each emitter element is configured such that upon exposure to the excitation light, a gradient of the charge carrier density is generated in the semiconductor layer in the area of transition between a first area of the semiconductor layer and a second area of the semiconductor layer, the gradient being substantially parallel to the first major surface of the semiconductor layer.

Abstract: A Raman amplifier system, including an optical wave guide having a crystalline material for guiding an optical signal having a first wavelength, the crystalline material having a Raman wavelength shift, and a pump configured to pump light into the optical wave guide, the pump light having a second wavelength being substantially equal to the first wavelength minus the Raman wavelength shift.

Abstract: The invention relates to a method of forming a semiconductor component comprising the steps of: providing a semiconductor substrate, forming a pattern of pores in the semiconductor substrate, the pores having a first depth, photoassisted wet etching of the substrate for etching of the pores to a second depth, the second depth being substantially greater than the first depth.

Abstract: The present invention relates to a Raman amplifier system comprising:

Abstract: Optical components are formed from integrated optical waveguides that have, least segmentwise, a periodic variation in the permittivities after the fashion of a photonic crystal. Said period variation is appropriately chosen so as to reduce the group velocity of signals to be transmitted in the optical waveguide. According to the invention, a field that has an influence on the interaction in said optical waveguide and transmitted optical signals is provided along at least part of the integrated photonic crystal. Reducing the group velocity increases the interaction under the influence of the field of an electrical or magnetic nature.

Abstract: The invention relates to a method of forming a semiconductor component comprising the steps of: