Patents by Inventor Georg Bogner

Georg Bogner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040056265
    Abstract: A device (1) with a number of light emitting diode chips (5) in a reflector (3) is formed in such a way that the direct line of sight between the light emitting diode chips (5) is interrupted by a partition (11). This improves the efficiency of the device (1) substantially.
    Type: Application
    Filed: September 29, 2003
    Publication date: March 25, 2004
    Inventors: Karlheinz Arndt, Georg Bogner, Gunter Waitl
  • Publication number: 20040047151
    Abstract: The invention relates to an optoelectronic component, having a semiconductor chip (1) which is mounted on a flexible chip support (6), in which conductor tracks (3, 5) for electrically connecting the semiconductor chip (1) are embodied on a first main face, and on which a housing frame (7) is disposed that is filled with a radiation-permeable medium, in particular a filler compound. A display device, an illumination or backlighting device, and a method for producing components of the invention are also disclosed.
    Type: Application
    Filed: August 1, 2003
    Publication date: March 11, 2004
    Inventors: Georg Bogner, Herbert Brunner, Wolfgang Lex, Gunter Waitl
  • Publication number: 20040036080
    Abstract: The invention concerns a light-emitting diode chip (1) comprising a radiation-emitting active region (32) and a window layer (2). To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region (32) is smaller than the cross-sectional area of the window layer (2) available for the decoupling of light.
    Type: Application
    Filed: August 11, 2003
    Publication date: February 26, 2004
    Inventors: Georg Bogner, Siegmar Kugler, Ernst Nirschl, Raimund Oberschmid, Karl-Heinz Schlereth, Olaf Schoenfeld, Norbert Stath, Gerald Neumann
  • Publication number: 20040026706
    Abstract: A radiation source has a field of semiconductor chips, which are disposed below a field of micro-lenses (8) disposed in a hexagonal lattice structure. The radiation source is distinguished by high radiation output and radiation density.
    Type: Application
    Filed: July 15, 2003
    Publication date: February 12, 2004
    Inventors: Georg Bogner, Wolfgang Gramann, Patrick Kromotis, Werner Marchl, Werner Spath, Gunter Waitl
  • Patent number: 6649946
    Abstract: A light source uses a yellow to red emitting phosphor with a host lattice of the nitridosilicate type MxSiyNz:Eu, wherein M is at least one of an alkaline earth metal chosen from the group Ca, Sr, Ba and wherein z=2/3x+4/3y.
    Type: Grant
    Filed: January 22, 2002
    Date of Patent: November 18, 2003
    Assignee: Osram Opto Semiconductors GmbH
    Inventors: Georg Bogner, Ir G. Botty, Bert Braune, Hubertus T. Hintzen, Jost W. H. van Krevel, Guenter Waitl
  • Publication number: 20030144414
    Abstract: Epoxy-resin systems resistant to aging, molded materials and components generated from them, and their utilization.
    Type: Application
    Filed: November 27, 2002
    Publication date: July 31, 2003
    Inventors: Georg Bogner, Herbert Brunner, Klaus Hoehn
  • Patent number: 6538229
    Abstract: The inventor relates to method for the posibility accurate adjustment and fixing of a microoptical element on a carrier. In this case, an optical position monitor with a camera monitors the accurate adjustment of the microchip and an imaging optical system directed onto the microoptical and element. According to the invention, thermal radiation is fed into the position monitor and directed by the same imaging optical system onto the microchip, and in this way the thermal energy is guided to exactly the correct point.
    Type: Grant
    Filed: May 2, 2000
    Date of Patent: March 25, 2003
    Assignee: Infineon Technologies AG
    Inventors: Georg Bogner, Hans-Ludwig Althaus
  • Publication number: 20030020101
    Abstract: A light source uses a yellow to red emitting phosphor with a host lattice of the nitridosilicate type MxSiyNz:Eu, wherein M is at least one of an alkaline earth metal chosen from the group Ca, Sr, Ba and wherein z=⅔x+{fraction (4/3)}y.
    Type: Application
    Filed: January 22, 2002
    Publication date: January 30, 2003
    Inventors: Georg Bogner, G. Botty, Bert Braune, Hubertus T. Hintzen, Jost W.H. van Krevel, Guenter Waitl
  • Patent number: 6353202
    Abstract: An apparatus for producing a chip-substrate connection, in particular by soldering a semiconductor chip on a substrate. The apparatus has a support, on which the substrate is temporarily supported, and a heating device which is provided for forming the chip-substrate connection. The heating device has a radiation source in the form of a laser in the infrared wavelength range. The support is formed by a heat body, which is assigned to the chip-substrate connection and is heated with thermal radiation by the radiation source. A surface of the heat body is coated with a material, in particular a material containing chromium, exhibiting high absorption with respect to the light radiation emitted by the radiation source.
    Type: Grant
    Filed: January 24, 2000
    Date of Patent: March 5, 2002
    Assignee: Infineon Technologies AG
    Inventors: Stefan Grötsch, Hans-Ludwig Althaus, Werner Späth, Georg Bogner
  • Patent number: 6059463
    Abstract: The electro-optical device has a housing and an electro-optical composite component. The composite component has an electro-optical basic component, in particular a photodiode, a laser diode, or an LED, into which light can be injected and/or from which light can be emitted. In order to be able to manufacture the housing for the electro-optical basic component in the most cost-effective way possible, there is provided a guide sleeve for the electro-optical composite component. The guide sleeve is connected to the basic component and it guides a plug with a ferrule of an optical waveguide. When the ferrule is plugged into the guide sleeve, the optical waveguide is optically coupled to the basic component.
    Type: Grant
    Filed: September 25, 1998
    Date of Patent: May 9, 2000
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hans-Ludwig Althaus, Georg Bogner, Joachim Krug
  • Patent number: 5999552
    Abstract: A radiation emitter component, in particular an infrared emitter component with a conventional light-emitting diode housing, includes two electrode connections, one of which has a well-shaped reflector. The housing has an optically transparent, electrically non-conducting encapsulation material. A semiconductor laser chip is fastened in a well-shaped reflector of the light-emitting diode housing. The semiconductor laser chip has a quantum well structure, in particular with a strained layer structure, for example MOVPE epitaxial layers with a layer sequence GaAlAs-InGaAs-GaAlAs. A diffusor material can be inserted into the optically transparent, electrically non-conducting material of the light-emitting diode housing.
    Type: Grant
    Filed: January 20, 1998
    Date of Patent: December 7, 1999
    Assignee: Siemens Aktiengesellschaft
    Inventors: Georg Bogner, Herbert Brunner, Heinz Haas, Johann Luft, Ernst Nirschl, Werner Spaeth, Norbert Stath, Wolfgang Teich
  • Patent number: 5981945
    Abstract: An optoelectronic transducer includes a base plate, a radiation-emitting or transmitting semiconductor component disposed on the base plate, an optical lens system aimed at the semiconductor component and a spacer joined to the base plate for the lens system. The base plate, the spacer and the lens system are formed of materials with at least similar coefficients of thermal expansion. A method for producing an optoelectronic transducer includes forming indentations in a base plate for receiving semiconductor components, while leaving a land remaining on at least one side of each of the indentations. A first plate of the size of the base plate is placed on the lands and joined to the lands by material locking. The first plate is removed between the lands producing spacers joined to the base plate. A number of the semiconductor components are inserted into the indentations in accordance with a predetermined grid pattern and are joined to the base plate to form substrates.
    Type: Grant
    Filed: March 8, 1996
    Date of Patent: November 9, 1999
    Assignee: Siemens Aktiengesellschaft
    Inventors: Werner Spaeth, Wolfgang Gramann, Georg Bogner, Ralf Dietrich
  • Patent number: 5907151
    Abstract: An optoelectronic transducer has a radiation-emitting and/or radiation-receiving body on a carrier unit. The carrier unit has a mounting surface provided with a number of terminal parts. The terminal parts are provided with electrical terminal areas defining a contacting plane. The distance of the contacting plane from the mounting surface is greater than a maximum height of the body from the mounting surface, including all optional electrical conductors and covers.
    Type: Grant
    Filed: May 27, 1997
    Date of Patent: May 25, 1999
    Assignee: Siemens Aktiengesellschaft
    Inventors: Wolfgang Gramann, Georg Bogner, Ralf Dietrich, Martin Weigert
  • Patent number: 5808323
    Abstract: The microoptical device has beam-parallelizing optics and a deflecting mirror configuration. The device converts a laser beam bundle, which is emitted by a laser diode strip structure or individual diode chips and which is comprised of a plurality of strip-shaped individual laser beams, into a rectangular or parallelogram-shaped laser beam bundle composed of parallelized strip-shaped individual laser beams arranged parallel next to one another. The beam-parallelizing optics may be a cylindrical lens, and the deflecting mirror configuration may be two rows of mirrors. The cylindrical lens and the rows of mirrors are preferably produced from a semiconductor material and they can therefore be produced cost effectively by means of methods used in semiconductor process engineering.
    Type: Grant
    Filed: March 29, 1996
    Date of Patent: September 15, 1998
    Assignee: Siemens Aktiengesellschaft
    Inventors: Werner Spaeth, Stefan Groetsch, Ralf Moser, Georg Bogner