Patents by Inventor Georg Brüderl
Georg Brüderl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11935755Abstract: A semiconductor laser includes a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, and a contact layer on a bottom side of the substrate opposite the semiconductor layer sequence, wherein the contact layer has at least one first partial region and at least one second partial region which are formed contiguously, the at least one first partial region is annealed, and the at least one second partial region is unannealed.Type: GrantFiled: December 18, 2020Date of Patent: March 19, 2024Assignee: OSRAM OLED GmbHInventors: Alfred Lell, Georg Brüderl, John Brückner, Sven Gerhard, Muhammad Ali, Thomas Adlhoch
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Publication number: 20230283040Abstract: The invention relates to a method for producing a radiation-emitting semiconductor body, including the following steps: providing a growth substrate having a main surface; producing a plurality of distributor structures on the main surface of the growth substrate; epitaxially depositing a compound semiconductor material on the main surface of the growth substrate, wherein the epitaxial growth of the compound semiconductor material varies along the main surface because of the distributor structures, such that the epitaxial deposition produces an epitaxial semiconductor layer sequence having at least a first emitter region and a second emitter region on the main surface, the first emitter region and the second emitter region being laterally adjacent to each other in a top view of a main surface of the semiconductor body, and the first emitter region and the second emitter region producing electromagnetic radiation of different wavelength ranges during operation.Type: ApplicationFiled: July 20, 2021Publication date: September 7, 2023Applicant: ams-OSRAM International GmbHInventors: Jan Wagner, Lars Naehle, Sven Gerhard, Alfred Lell, Harald Koenig, Christoph Eichler, Georg Brüderl, Martin Rudolf Behringer
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Publication number: 20220013990Abstract: In an embodiment an edge-emitting semiconductor laser includes a semiconductor layer sequence having a waveguide region with an active layer disposed between a first waveguide layer and a second waveguide layer and a layer system arranged outside the waveguide region configured to reduce facet defects in the waveguide region, wherein the layer system includes one or more layers with the material composition AlxInyGa1-x-yN with 0?x?1, 0?y<1 and x+y?1, wherein at least one layer of the layer system includes an aluminum portion x?0.05 or an indium portion y?0.02, wherein a layer strain is at least 2 GPa at least in some areas, and wherein the semiconductor layer sequence is based on a nitride compound semiconductor material.Type: ApplicationFiled: November 12, 2019Publication date: January 13, 2022Inventors: Jan Wagner, Werner Bergbauer, Christoph Eichler, Alfred Lell, Georg Brüderl, Matthias Peter
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Publication number: 20210111030Abstract: A semiconductor laser includes a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, and a contact layer on a bottom side of the substrate opposite the semiconductor layer sequence, wherein the contact layer has at least one first partial region and at least one second partial region which are formed contiguously, the at least one first partial region is annealed, and the at least one second partial region is unannealed.Type: ApplicationFiled: December 18, 2020Publication date: April 15, 2021Inventors: Alfred Lell, Georg Brüderl, John Brückner, Sven Gerhard, Muhammad Ali, Thomas Adlhoch
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Patent number: 10910226Abstract: A method of manufacturing a semiconductor laser including providing a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, applying a continuous contact layer having at least one first partial region and at least one second partial region on a bottom side of the substrate opposite the semiconductor layer sequence, and locally annealing the contact layer only in the at least one first partial region.Type: GrantFiled: October 25, 2017Date of Patent: February 2, 2021Assignee: OSRAM OLED GmbHInventors: Alfred Lell, Georg Brüderl, John Brückner, Sven Gerhard, Muhammad Ali, Thomas Adlhoch
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Patent number: 10714901Abstract: In an embodiment a laser include a semiconductor layer sequence having an active zone for generating radiation and an electrical contact web arranged on a top side of the semiconductor layer sequence, wherein the contact web is located on the top side only in an electrical contact region or is in electrical contact with the top side only in the contact region so that the active zone is supplied with current only in places during operation, wherein the contact web comprises a plurality of metal layers at least partially stacked one above the other, wherein at least one of the metal layers comprises a structuring so that the at least one metal layer only partially covers the contact region and has at least one opening or interruption, and wherein the structuring reduces stresses of the semiconductor layer sequence on account of different thermal expansion coefficients of the metal layers.Type: GrantFiled: March 27, 2017Date of Patent: July 14, 2020Assignee: OSRAM OLED GMBHInventors: Bernhard Stojetz, Georg Brüderl
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Patent number: 10630057Abstract: In an embodiment a laser include a semiconductor layer sequence having an active zone for generating radiation and an electrical contact web arranged on a top side of the semiconductor layer sequence, wherein the contact web is located on the top side only in an electrical contact region or is in electrical contact with the top side only in the contact region so that the active zone is supplied with current only in places during operation, wherein the contact web comprises a plurality of metal layers at least partially stacked one above the other, wherein at least one of the metal layers comprises a structuring so that the at least one metal layer only partially covers the contact region and has at least one opening or interruption, and wherein the structuring reduces stresses of the semiconductor layer sequence on account of different thermal expansion coefficients of the metal layers.Type: GrantFiled: March 27, 2017Date of Patent: April 21, 2020Assignee: OSRAM OLED GMBHInventors: Bernhard Stojetz, Georg Brüderl
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Publication number: 20200028024Abstract: A method of manufacturing a semiconductor laser including providing a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, applying a continuous contact layer having at least one first partial region and at least one second partial region on a bottom side of the substrate opposite the semiconductor layer sequence, and locally annealing the contact layer only in the at least one first partial region.Type: ApplicationFiled: October 25, 2017Publication date: January 23, 2020Inventors: Alfred Lell, Georg Brüderl, John Brückner, Sven Gerhard, Muhammad All, Thomas Adlhoch
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Publication number: 20190173264Abstract: In an embodiment a laser include a semiconductor layer sequence having an active zone for generating radiation and an electrical contact web arranged on a top side of the semiconductor layer sequence, wherein the contact web is located on the top side only in an electrical contact region or is in electrical contact with the top side only in the contact region so that the active zone is supplied with current only in places during operation, wherein the contact web comprises a plurality of metal layers at least partially stacked one above the other, wherein at least one of the metal layers comprises a structuring so that the at least one metal layer only partially covers the contact region and has at least one opening or interruption, and wherein the structuring reduces stresses of the semiconductor layer sequence on account of different thermal expansion coefficients of the metal layers.Type: ApplicationFiled: March 27, 2017Publication date: June 6, 2019Inventors: Bernhard Stojetz, Georg Brüderl
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Patent number: 9373937Abstract: A semiconductor laser includes a layer structure with superimposed layers with at least the following layer structure: an n-doped outer layer, a third wave-guiding layer, an active zone in which light-generating structures are arranged, a second wave-guiding layer, a blocking layer, a first wave-guiding layer, a p-doped outer layer. The first, second and third wave-guiding layers have at least AlxInyGa (1?x?y) N. The blocking layer has an Al content which is at least 2% greater than the Al content of the adjacent first wave-guiding layer. The Al content of the blocking layer increases from the first wave-guiding layer towards the second wave-guiding layer. The layer structure has a double-sided gradation. The double-side gradation is arranged at the height of the blocking layer such that at least one part of the blocking layer or the entire blocking layer is of greater width than the first wave-guiding layer.Type: GrantFiled: September 3, 2013Date of Patent: June 21, 2016Assignee: OSRAM Opto Semiconductors GmbHInventors: Uwe Strauβ, Teresa Wurm, Adrian Stefan Avramescu, Georg Brüderl, Christoph Eichler, Sven Gerhard
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Publication number: 20150255956Abstract: A semiconductor laser includes a layer structure with superimposed layers with at least the following layer structure: an n-doped outer layer, a third wave-guiding layer, an active zone in which light-generating structures are arranged, a second wave-guiding layer, a blocking layer, a first wave-guiding layer, a p-doped outer layer. The first, second and third wave-guiding layers have at least AlxInyGa (1?x?y) N. The blocking layer has an Al content which is at least 2% greater than the Al content of the adjacent first wave-guiding layer. The Al content of the blocking layer increases from the first wave-guiding layer towards the second wave-guiding layer. The layer structure has a double-sided gradation. The double-side gradation is arranged at the height of the blocking layer such that at least one part of the blocking layer or the entire blocking layer is of greater width than the first wave-guiding layer.Type: ApplicationFiled: September 3, 2013Publication date: September 10, 2015Applicant: OSRAM Opt Semiconductors GmbHInventors: Uwe Strauß, Teresa Wurm, Adrian Stefan Avramescu, Georg Brüderl, Christoph Eichler, Sven Gerhard
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Patent number: 8502264Abstract: A composite substrate (1) comprising a substrate body (2) and a utility layer (31) fixed on the substrate body (2). A planarization layer (4) is arranged between the utility layer (31) and the substrate body (2). A method for producing a composite substrate (1) applies a planarization layer (4) on a provided utility substrate (3). The utility substrate (3) is fixed on a substrate body (2) for the composite substrate (1). The utility substrate (3) is subsequently separated, wherein a utility layer (31) of the utility substrate (3) remains for the composite substrate (1) on the substrate body (2).Type: GrantFiled: April 20, 2007Date of Patent: August 6, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Volker Hârle, Uwe Strauss, Georg Brüderl, Christoph Eichler, Adrian Avramescu
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Patent number: 8012256Abstract: Disclosed are a method of fabricating a quasi-substrate wafer with a subcarrier wafer and a growth layer, and a semiconductor body fabricated using such a quasi-substrate wafer. In the method of fabricating a quasi-substrate wafer, a growth substrate water is fabricated that is provided with a separation zone and comprises the desired material of the growth layer. The growth substrate wafer is provided with a stress that counteracts a stress generated by the formation of the separation zone, and/or the stress generated by the formation of the separation zone is distributed, by structuring a first main race of the growth substrate water and/or the separation zone, to a plurality of subregions along the first main face. The growth substrate wafer with separation zone exhibits no or only slight bowing.Type: GrantFiled: January 30, 2007Date of Patent: September 6, 2011Assignee: Osram Opto Semiconductor GmbHInventors: Georg Brüderl, Christoph Eichler, Uwe Strauss
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Publication number: 20090206348Abstract: A composite substrate (1) comprising a substrate body (2) and a utility layer (31) fixed on the substrate body (2). A planarization layer (4) is arranged between the utility layer (31) and the substrate body (2). A method for producing a composite substrate (1) applies a planarization layer (4) on a provided utility substrate (3). The utility substrate (3) is fixed on a substrate body (2) for the composite substrate (1). The utility substrate (3) is subsequently separated, wherein a utility layer (31) of the utility substrate (3) remains for the composite substrate (1) on the substrate body (2).Type: ApplicationFiled: April 20, 2007Publication date: August 20, 2009Applicant: Osram Opto Semiconductors GmbHInventors: Volker Hârle, Uwe Strauss, Georg Brüderl, Christoph Eichler, Adrian Avramescu
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Patent number: 7524737Abstract: In a process for producing a semiconductor chip, a functional semiconductor layer sequence (2) is grown epitaxially on a growth substrate (1). Then, a separating zone (4), which lies parallel to a main surface (8) of the growth substrate (1), is formed in the growth substrate (1) by ion implantation, the ion implantation taking place through the functional semiconductor layer sequence (2). Then, a handle substrate (6) is applied to the functional semiconductor layer sequence (2), and a part of the growth substrate (1) which is remote from the handle substrate (6) as seen from the separating zone (4), is detached along the separating zone (4).Type: GrantFiled: December 20, 2005Date of Patent: April 28, 2009Assignee: Osram Opto Semiconductors GmbHInventors: Georg Brüderl, Volker Härle
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Patent number: 7375377Abstract: A light-emitting diode chip (1), in which over a substrate (2), a series of epitaxial layers (3) with a radiation-emitting active structure (4) based on InGaN is disposed. Between the substrate (2) and the active structure (4), a buffer layer (20) is provided. The material or materials of the buffer layer (20) are selected such that their epitaxial surface (6) for the epitaxy of the active structure (4) is unstressed or slightly stressed at their epitaxial temperature. The active structure (4) has In-rich zones (5), disposed laterally side by side relative to the epitaxial plane, in which zones the In content is higher than in other regions of the active structure (4). A preferred method for producing the chip is disclosed.Type: GrantFiled: June 13, 2001Date of Patent: May 20, 2008Assignee: Osram Opto Semiconductors GmbHInventors: Johannes Baur, Georg Brüderl, Berthold Hahn, Volker Härle, Uwe Strauss
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Patent number: 7329587Abstract: A method for producing a plurality of semiconductor chips, particularly radiation-emitting semiconductor chips, each having at least one epitaxially produced functional semiconductor layer stack, comprising the following method steps: preparing a growth substrate wafer (1) substantially comprised of semiconductor material from a semiconductor material system that is with respect to lattice parameters the same as or similar to that on which a semiconductor layer sequence for the functional semiconductor layer stack is based, forming in the growth substrate wafer (1) a separation zone (4) disposed parallel to a main face (100) of the growth substrate wafer (1), joining the growth substrate wafer (1) to an auxiliary carrier wafer (2), detaching along the separation zone (4) a portion (11) of the growth substrate wafer (1) that faces away from the auxiliary carrier wafer (2) as viewed from the separation zone (4), forming on the portion (12) of the growth substrate wafer remaining on the auxiliary carrier wafeType: GrantFiled: June 24, 2004Date of Patent: February 12, 2008Assignee: Osram Opto Semiconductors GmbHInventors: Georg Bruederl, Berthold Hahn, Volker Haerle
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Publication number: 20060211159Abstract: A method for producing a plurality of semiconductor chips, particularly radiation-emitting semiconductor chips, each having at least one epitaxially produced functional semiconductor layer stack, comprising the following method steps: preparing a growth substrate wafer (1) substantially comprised of semiconductor material from a semiconductor material system that is with respect to lattice parameters the same as or similar to that on which a semiconductor layer sequence for the functional semiconductor layer stack is based, forming in the growth substrate wafer (1) a separation zone (4) disposed parallel to a main face (100) of the growth substrate wafer (1), joining the growth substrate wafer (1) to an auxiliary carrier wafer (2), detaching along the separation zone (4) a portion (11) of the growth substrate wafer (1) that faces away from the auxiliary carrier wafer (2) as viewed from the separation zone (4), forming on the portion (12) of the growth substrate wafer remaining on the auxiliary carrierType: ApplicationFiled: June 24, 2005Publication date: September 21, 2006Inventors: Georg Bruederl, Berthold Hahn, Volker Haerle