Abstract: The invention relates to an optoelectronic semiconductor component, which has a carrier element (1), on which an optoelectronic semiconductor chip (2) having at least one active layer is arranged, wherein the active layer is designed to emit or receive light during operation and wherein the semiconductor chip (2) is covered with a protective layer (3) that contains poly-para-xylenes.

Abstract: A method for producing a multifunctional layer, a method for producing an electrophoresis substrate, and a method for producing a converter plate and an optoelectronic component are disclosed. In an embodiment the method includes providing an electrophoresis substrate comprising a carrier having a front side and a back side, wherein a first electrically conductive layer and a second electrically conductive layer are located on the front side, electrophoretically depositing a first material onto the first electrically conductive layer, electrophoretically depositing a second material onto the second electrically conductive layer and arranging a filler material between the first material and the second material, wherein the filler material forms a common boundary surface with the first material and the second material.

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip including a light-transmissive carrier, a semiconductor layer sequence on the light-transmissive carrier and electrical connection points on a bottom portion remote from the light-transmissive carrier of the semiconductor layer sequence, a light-transmissive encapsulating material enclosing the optoelectronic semiconductor chip in places, and particles of a light-scattering and/or light-reflecting material, wherein the bottom of the semiconductor layer sequence is at least in places free of the light-transmissive encapsulating material, and the particles cover the bottom of the semiconductor layer sequence and an outer face of the encapsulating material in places.

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip embedded in a molded body such that an upper side of the optoelectronic semiconductor chip is at least partially not covered by the molded body, wherein a first metallization is arranged on an upper side of the molded body, wherein the first metallization is electrically insulated from the optoelectronic semiconductor chip, and a first material is arranged on the first metallization.

Abstract: A method for producing an optoelectronic component includes creating a first layer of a polymer material. The method also includes applying crystals to a surface of the first layer. The method also includes creating a second layer of a polymer material on the surface of the first layer. The crystals can be between the first and second layers.

Abstract: In various exemplary embodiments, a method is provided for producing an assembly emitting electromagnetic radiation. In this case, a component composite structure is provided which has components emitting electromagnetic radiation, which components are coupled to one another physically in the component composite structure. In each case at least one component-individual property is imparted to the components. Depending on the determined properties of the components, a structure mask for covering the components in the component composite structure is formed, wherein the structure mask has structure mask cutouts corresponding to the components, which structure mask cutouts are formed in component-individual fashion depending on the properties of the corresponding components. The structure mask cutouts provide phosphor regions, which are exposed in the structure mask cutouts, on the components. Phosphor layers are formed on the phosphor regions of the components.

Abstract: An optoelectronic component is provided. The optoelectronic component includes an electromagnetic radiation source including an optically active region designed for emitting a first electromagnetic radiation, and a converter structure, which includes at least one converter material and is arranged in the beam path of the first electromagnetic radiation. The at least one converter material is designed to convert at least one portion of the first electromagnetic radiation into at least one second electromagnetic radiation. The at least one second electromagnetic radiation has at least one different wavelength than the at least one portion of the first electromagnetic radiation. The converter structure is formed in a structured fashion in such a way that the converter structure has a predefined region, such that the at least one second electromagnetic radiation is emittable only from the predefined region. The predefined region has a smaller area than the optically active region.

Abstract: An optoelectronic semiconductor component includes one or more light-emitting diode chips. The light-emitting diode chip has a main radiation side. A diaphragm is arranged downstream of the main radiation side along a main radiation direction of the light-emitting diode chip. The diaphragm is mounted on or in a component housing. The main radiation side has a mean edge length of at least 50 ?m. The diaphragm can be switched from light-impervious to light-pervious. The diaphragm comprises precisely one opening region for radiation transmission. The semiconductor component can be used as a flashlight for a mobile image recording device.

Abstract: The invention relates to an optoelectronic semiconductor component, which has a carrier element (1), on which an optoelectronic semiconductor chip (2) having at least one active layer is arranged, wherein the active layer is designed to emit or receive light during operation and wherein the semiconductor chip (2) is covered with a protective layer (3) that contains poly-para-xylenes.

Abstract: What is specified is an optoelectronic component comprising a layer sequence having an active layer, which emits primary electromagnetic radiation, and at least one transparent coupling-out element arranged in the beam path of the primary electromagnetic radiation. The at least one transparent coupling-out element comprises a hybrid material or is produced from a hybrid material.

Abstract: An optoelectronic semiconductor component includes one or more light-emitting diode chips. The light-emitting diode chip has a main radiation side. A diaphragm is arranged downstream of the main radiation side along a main radiation direction of the light-emitting diode chip. The diaphragm is mounted on or in a component housing. The main radiation side has a mean edge length of at least 50 ?m. The diaphragm can be switched from light-impervious to light-pervious. The diaphragm comprises precisely one opening region for radiation transmission. The semiconductor component can be used as a flashlight for a mobile image recording device.