Abstract: A method for operating a surface treatment plant, resulting overspray in a coating booth is taken up by an air flow. The air flow loaded with overspray is conveyed as exhaust air flow to at least one separation unit in which overspray is separated out. In a supply region upstream of the at least one separation unit and/or in an internal space of the at least one separation unit, a filter aid having a separation aggregate state is added to the exhaust air flow and forms, with the overspray, a separation mixture which is separated in or at the at least one separation unit. The filter aid used is solid or liquid in the separation aggregate state. In the at least one separation unit, conditions are established in which the filter aid transitions from the separation aggregate state into a gaseous aggregate state such that the gaseous filter air can separate from the separation mixture.

Abstract: A surface treatment plant for treating objects, in particular vehicle bodies, has a thin film conversion process in which a ceramic thin film is applied to the objects using a process medium, a subsequent rinsing step in which the objects are rinsed with rinsing medium after the thin film conversion process, and a deionization plant which has a cation exchanger and a downstream anion exchanger and is configured for deionizing the process medium and/or the rinsing medium. For economical operation, the deionization plant is preceded by a preconditioning apparatus which is configured for removing complex anions which are formed and/or present in the thin film conversion process from the process medium and/or the rinsing medium. Furthermore, a corresponding preconditioning apparatus and a treatment process are described.

Abstract: A method for operating a surface treatment installation wherein overspray that occurs in one or more coating booths is taken up by a booth air stream. Booth air laden with overspray is conducted to at least one separating unit in which overspray is separated out. The booth air laden with overspray or the booth air free of overspray is fed a solidifying material on its flow path to at least one separating unit and/or the booth air laden with overspray or the booth air free of overspray is fed a solidifying material in the interior of at least one separating unit and/or overspray that has already been deposited in at least one separating unit is fed a solidifying material and/or the at least one separating unit is fed a solidifying material before the separating unit is functionally fitted in the surface treatment installation, wherein the solidifying material has the effect that a curing process in the overspray is initiated or assisted.

Abstract: A method for operating a surface treatment plant, resulting overspray in a coating booth is taken up by an air flow. The air flow loaded with overspray is conveyed as exhaust air flow to at least one separation unit in which overspray is separated out. In a supply region upstream of the at least one separation unit and/or in an internal space of the at least one separation unit, a filter aid having a separation aggregate state is added to the exhaust air flow and forms, with the overspray, a separation mixture which is separated in or at the at least one separation unit. The filter aid used is solid or liquid in the separation aggregate state. In the at least one separation unit, conditions are established in which the filter aid transitions from the separation aggregate state into a gaseous aggregate state such that the gaseous filter air can separate from the separation mixture.

Abstract: A method for reducing an overlay error of structures of a layer to be patterned relative to those of a reference layer includes formation of standard measurement marks assigned to one another in the two layers for determining an overlay error and for setting up further measurement marks for determining an additional optical imaging error of the projection system at least in the current layer. The further measurement marks have a geometry adapted to the geometry of selected structures of the circuit patterns to be transferred by projection from masks onto semiconductor substrates. An imaging error affects circuit structures and further measurement marks in the same way. An alignment correction for a subsequent exposure can be calculated from the measured positional deviations between the two standard measurement marks and between the standard measurement mark and the further measurement mark of the layer currently to be patterned.

Abstract: In a method and system for production of a printed document with a unique identifier, the data medium for the unique identifier is applied on a recording medium, the data medium being capable of being electronically written without contact so that data are written without contact onto the data medium in the course of a document production event. Data of at least one of a user program, of the printed document, and of the data medium are linked in a file.

Abstract: A method for correcting structure-size-dependent positioning errors during the photolithographic projection by an exposure apparatus and the use thereof includes providing an exposure apparatus for exposing a plurality of exposure fields and a simulation model of the exposure apparatus for specifying correction values for intra-field errors, providing a first pattern with first structure elements and first measurement marks, which, in the case of a projection, are beset by a first positioning error and a second positioning error dependent on the dimensions and the position in the exposure field, providing a correction function suitable for specifying the first and the second positioning error, determining an average relative positioning error including the first and the second positioning error, calculating correction values for the control of the exposure apparatus, and transmitting the correction values to the exposure apparatus so that subsequent exposures are performed with an improved overlay.

Abstract: An apparatus and method for performing a second toner image fixing on a toner image on a carrier material includes a second fixing unit in the carrier material transport path. The second fixing unit is in a burn-in unit that is spaced by a cooling distance from the printer or copier and its toner fixing unit. The first fixing unit of the printer or copier fixes the toner image in a first fixing condition and the second fixing unit fixes the toner image in a second fixing condition. For printers or copiers that perform two sided printing and have front and back side fixing units, the burn-in unit also has front and back side fixing units for fixing the toner image in the second fixing condition. A controller may be provided to reduce the heat energy applied to the first fixing unit in the printer or copier to partially fix the toner image so that the second fixing unit further fixes the toner image.

Abstract: A method, suitable to photolithographie projection, for detecting the positioning errors of circuit patterns during the transfer by a mask into layers of a substrate of a semiconductor wafer. After the transfer of at least one multiple arrangement of a first test structure into at least one resist layer above the substrate, wherein the first test structure includes a first circuit pattern, at least one first overlay mark and at least one first micropatterned alignment mark, the values of a first positioning error of the first circuit patterns relative to the first overlay marks and the first micropatterned alignment marks are determined for each element of the at least one multiple arrangement.

Abstract: Disclosed is a method for fabricating a contract hole plane in a memory module with an arrangement of memory cells each having a selection transistor. The methods can be utilized during the production of dynamic random access memory (DRAM) modules.

Abstract: A method for correcting structure-size-dependent positioning errors during the photolithographic projection by an exposure apparatus and the use thereof includes providing an exposure apparatus for exposing a plurality of exposure fields and a simulation model of the exposure apparatus for specifying correction values for intra-field errors, providing a first pattern with first structure elements and first measurement marks, which, in the case of a projection, are beset by a first positioning error and a second positioning error dependent on the dimensions and the position in the exposure field, providing a correction function suitable for specifying the first and the second positioning error, determining an average relative positioning error including the first and the second positioning error, calculating correction values for the control of the exposure apparatus, and transmitting the correction values to the exposure apparatus so that subsequent exposures are performed with an improved overlay.

Abstract: A mark configuration for the alignment and/or determination of a relative position of at least two planes in relation to one another in a substrate and/or in layers on a substrate during lithographic exposure, in particular, in the case of a wafer during the production of DRAMs, includes a mark structure, and at least one layer of a definable thickness underneath the mark structure for adjusting the physical position of the mark structure relative to a reference plane in or on the substrate. Also provided is a wafer having such a configuration and a process for providing such a configuration. The invention allows a mark configuration to have mark structures exhibiting good contrast regardless of the design or the process conditions.

Abstract: The invention relates to a method for detecting the positioning errors of circuit patterns during the transfer by a mask into layers of a substrate of a semiconductor wafer. After the transfer of at least one multiple arrangement of a first test structure by means of photolithographic projection into at least one resist layer above the substrate, the first test structure having a first circuit pattern, at least one first overlay mark and at least one first micropatterned alignment mark, the values of a first positioning error of the first circuit patterns relative to the first overlay marks and the first micropatterned alignment marks are determined for each element of the at least one multiple arrangement.

Abstract: A method for reducing an overlay error of structures of a layer to be patterned relative to those of a reference layer includes formation of standard measurement marks assigned to one another in the two layers for determining an overlay error and for setting up further measurement marks for determining an additional optical imaging error of the projection system at least in the current layer. The further measurement marks have a geometry adapted to the geometry of selected structures of the circuit patterns to be transferred by projection from masks onto semiconductor substrates. An imaging error affects circuit structures and further measurement marks in the same way. An alignment correction for a subsequent exposure can be calculated from the measured positional deviations between the two standard measurement marks and between the standard measurement mark and the further measurement mark of the layer currently to be patterned.

Abstract: A mark configuration is provided for the orientation and/or determination of the relative position of a substrate and/or of layers on the substrate during a lithographic exposure, in particular for the case of a wafer during the fabrication of DRAMs. At least one part of a mark is disposed above a patterned background for the purpose of increasing a difference in contrast between the mark and the substrate. A wafer can also be manufactured with such a mark configuration. A method for fabricating the mark configuration is also described. An efficient and simple orientation of layers and/or of the substrate is thus made possible.