Patents by Inventor Georg J. Bednorz

Georg J. Bednorz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Field effect device with a channel with a switchable conductivity
    Patent number: 7466579
    Abstract: A field effect device includes a source electrode, a drain electrode spaced laterally apart from the source electrode, a channel formed between the source electrode and the drain electrode, and a gate electrode separated from the channel by an insulating layer. The channel includes a switching material that is reversibly switchable between a lower conductivity state and a higher conductivity state by at least one of: (i) application of a predetermined voltage between the source electrode and the drain electrode or between the gate electrode and at least one of the source electrode and the drain electrode, (ii) application of a voltage or a current to the switching material in the channel, and (iii) application of at least one of heat and light. Each of the conductivity states is persistent without the need for a sustaining excitation signal including an electrical field, heat and/or light applied to the device.
    Type: Grant
    Filed: August 31, 2006
    Date of Patent: December 16, 2008
    Assignee: International Business Machines Corporation
    Inventors: Georg J. Bednorz, David J. Gundlach, Siegfried F. Karg, Gerhard J. Meijer, Heike E. Riel, Walter H. Riess
  • Field Effect Device with a Channel with a Switchable Conductivity
    Publication number: 20080251777
    Abstract: A field effect device includes a source electrode, a drain electrode, a channel formed between the source electrode and the drain electrode, and a gate electrode formed directly on the channel and arranged in a gap between the source electrode and the drain electrode. The channel includes a switching material that is reversibly switchable between a lower conductivity state and a higher conductivity state. The first conductivity state has an electrical conductivity which is lower than an electrical conductivity of the second conductivity state. Each of the conductivity states is persistent without the need for a sustaining excitation signal including an electrical field, heat and/or light applied to the device.
    Type: Application
    Filed: May 14, 2008
    Publication date: October 16, 2008
    Applicant: International Business Machines Corporation
    Inventors: Georg J. Bednorz, David J. Gundlach, Siegfried F. Karg, Gerhard I. Meijer, Heike E. Riel, Walter H. Riess
  • Field effect device with a channel with a switchable conductivity
    Patent number: 7130212
    Abstract: A field effect device (2) includes a source electrode (14), a drain electrode (16), a channel (24) formed between the source electrode (14) and the drain electrode (16), and a gate electrode (22) separated from the channel (24) by an insulating layer (20), wherein the channel (24) comprises a switching material reversibly switchable between a lower conductivity state and a higher conductivity state, each of the conductivity states being persistent.
    Type: Grant
    Filed: November 12, 2004
    Date of Patent: October 31, 2006
    Assignee: International Business Machines Corporation
    Inventors: Georg J. Bednorz, David J. Gundlach, Siegfried F. Karg, Gerhard I. Meijer, Heike E. Riel, Walter H. Riess
  • Switchable capacitance and nonvolatile memory device using the same
    Patent number: 6990008
    Abstract: A device (2) with a switchable capacitance comprises a first and a second electrode (12, 20) facing each other, a dielectric layer (14) between a first and a second capacitor electrode (12, 20), and a switching member (18) between the second electrode (20) and the dielectric layer (14), the switching member (18) comprising a switching material reversibly switchable between a lower conductivity state and a higher conductivity state, each of the lower conductivity state and the higher conductivity state being persistent, wherein the capacitance of the device (2) depends on the conductivity state of the switching material.
    Type: Grant
    Filed: November 10, 2004
    Date of Patent: January 24, 2006
    Assignee: International Business Machines Corporation
    Inventors: Georg J. Bednorz, David J. Gundlach, Gerhard I. Meijer, Walter H. Riess