Abstract: A method and apparatus for the selective deposition of metal layers on a substrate. At least one metal layer is deposited in a self-aligned manner on conductive regions on the surface of isolating or semiconductive substrates, for which purpose the conductive regions are arranged facing a metal plate having at least one layer of the metal to be deposited, and Tesla currents are generated between the metal plate and the regions to be coated. The apparatus for implementing the method includes a metal plate, a Tesla transformer which is coupled to the metal plate or to a metal grid, spaced apart from the surface of the metal plate away from the conductive regions, having closely adjacent and regularly distributed spikes pointing towards the metal. This method may be used, for example, to produce conductors on or in ceramic modules, circuit cards and semiconductor elements.

Abstract: According to this method, copper is dry etched in a glow discharge containing compounds with at least one methyl or methylene group, particularly at temperatures close to room temperature.The method is applied in particular for making conductors on or in module substrates or circuit cards, solder spots, and the wiring of magnetic thin films.

Abstract: A plasma reactor comprises a reaction chamber having two plate-shaped electrodes arranged parallel to and above each other, whereby the substrates are supported on the lower electrode and this electrode is additionally provided with a center opening (5) through which gas is fed into the electrode space or which is evacuated from it, and where (a) the upper electrode is connected to a high frequency AC or RF voltage and (b) which has no electrode material in the regions opposite the substrates and (c) where their position and shape are determined by the substrates on the lower electrode, causing the electric field in the electrode space to be selectively weakened at at least above the substrates.

Abstract: A reactor comprising a plate-shaped cathode that is horizontally arranged and connected to an alternating voltage, in a ground connected casing, and gas inlet and gas outlet lines. The cathode is equipped with means for generating local magnetic fields restricted to the region of the individually supported substrates. The cathode can be furthermore have holes or openings in which are arranged substrate holders shiftable or movable vertically to relate to the substrate surface.The substrates are etched in the reactor by means of a plasma which is produced from at least one reactive gas. Each substrate is exposed to at least one local magnetic field. If a mostly chemically etchable material is to be etched in the presence of a mostly physically etchable material, to a much stronger extent than the latter, the advantageous etching speed ratio can be set in that the substrates are additionally raised over the cathode surface.

Abstract: The substrate 1 for magnetic disks takes the form of a laminate made up of a plurality of individual thin, fiber-reinforced, anisotropic and unidirectional lamellae. These lamellae are arranged staggered on top of each other at few angular spacings, i.e., at great angles of up to 60.degree., and are finally pressed together. The outer layers and lamellae, respectively, may be reinforced by stronger fibers or other material, such as carbon fibers outside and glass fibers inside, to influence the flexural modulus and the shearing modulus independently of each other. This makes for a substrate which consists of anisotropic material, whose characteristics are essentially isotropic, which is lighter than previously used substrates, and which has a higher critical number of revolutions.

Abstract: A structure for shaping or masking energetic radiation is described. The structure comprises a shallow silicon body having at least one through opening, and a metal silicide layer covering the surface of the structure. The structure characterized by having a high mechanical, and thermal stability may be used particularly in electron and X-ray lithography. More specifically, the structure may be used as an aperture for electron beams, or as a mask for X-rays. The production of the structure includes the steps of making through openings in the silicon body, and the forming of the silicide layer by vapor depositing a metal on the surface of the silicon body and by subsequent annealing.

Abstract: Disclosed is a simplified method of producing semiconductor device structures in an integrated technology using at least one ion implantation step. Implantation of the doping ions into a silicon wafer, for example, for producing a subcollector or an emitter, is not effected, as previously, in an ultra-high vacuum atmosphere through a thin protective layer of silicon dioxide which is applied by a separate thermal oxidation step prior to implantation, but the doping ions are directly implanted into the bare silicon wafer. The latter implantation is effected in an atmosphere of increased partial pressure of oxygen. Enhanced diffusion of the oxygen adsorbed at the surface occurs into the vacancies which are generated by the implanted doping ions close the surface of the silicon wafer. In this manner a silicon dioxide protective layer is formed already in the initial stage of ion implantation.

Abstract: A direct heated rod-shaped cathode for an ion source is provided with a region of reduced cross-section adjacent its negative end to maximize the path length of electron movement within the discharge chamber and to provide effective control of the cathode resistance in a region that is relatively free of sputtering erosion during use.