Abstract: A device including a semiconductor chip. One embodiment provides a device, including a metal layer having a first layer face. A semiconductor chip includes a first chip face. The semiconductor chip is electrically coupled to and placed over the metal layer with the first chip face facing the first layer face. An encapsulation material covers the first layer face and the semiconductor chip. At least one through-hole extends from the first layer face through the encapsulation material. The at least one through-hole is accessible from outside the device.

Abstract: A die structure includes a die and a metallization layer disposed over the front side of the die. The metallization layer includes copper. At least a part of the metallization layer has a rough surface profile. The part with the rough surface profile includes a wire bonding region, to which a wire bonding structure is to be bonded.

Abstract: A device including a semiconductor chip and metal foils. One embodiment provides a device including a semiconductor chip having a first electrode on a first face and a second electrode on a second face opposite to the first face. A first metal foil is attached to the first electrode of the semiconductor chip in an electrically conductive manner. A second metal foil is attached to the second electrode of the semiconductor chip in an electrically conductive manner.

Abstract: A sensor device and method. One embodiment provides a first semiconductor chip having a sensing region. A porous structure element is attached to the first semiconductor chip. A first region of the porous structure element faces the sensing region of the first semiconductor chip. An encapsulation material partially encapsulates the first semiconductor chip and the porous structure element.

Abstract: A semiconductor package includes a semiconductor chip. An inductor is applied to the semiconductor chip. The inductor has at least one winding. An encapsulation body is formed of an encapsulation material. The encapsulation material contains a magnetic component and fills a space within the winding to form a magnetic winding core.

Abstract: A method includes providing a carrier; applying a dielectric layer to the carrier; applying a metal layer to the dielectric layer; placing a first semiconductor chip on the metal layer with contact pads of the first semiconductor chip facing the metal layer; covering the first semiconductor chip with an encapsulation material; and removing the carrier.

Abstract: A semiconductor device includes a semiconductor chip including a first conducting element, and a second conducting element arranged outside the semiconductor chip and electrically connected to the first conducting element at a first location. It further includes a third conducting element arranged outside the semiconductor chip and electrically connected to the first conducting element at a second location, and a fourth conducting element arranged outside the semiconductor chip. An encapsulating body encapsulates the semiconductor chip. A vertical projection of the fourth conducting element on the chip crosses the first conducting element between the first location and the second location. At least one of the second conducting element, third conducting element, and fourth conducting element extend over the semiconductor chip and the encapsulating body.

Abstract: Metal particles are applied to a metal foil. A semiconductor chip is placed over the metal foil with contact elements of the semiconductor chip facing the metal particles. The metal particles are heated and the metal foil is structured after heating the metal particles.

Abstract: A sensor device and method. One embodiment provides a first semiconductor chip having a sensing region. A porous structure element is attached to the first semiconductor chip. A first region of the porous structure element faces the sensing region of the first semiconductor chip. An encapsulation material partially encapsulates the first semiconductor chip and the porous structure element.

Abstract: This application relates to a method of manufacturing a semiconductor device comprising providing a semiconductor wafer with the semiconductor wafer defining a first main face and a second main face opposite to the first main face; forming trenches in the first main face of the semiconductor wafer; forming a dielectric layer over the first main face and in the trenches; thinning the semiconductor wafer by removing semiconductor material from the second main face of the semiconductor wafer after the forming of the dielectric layer; and singulating at least one semiconductor chip from the semiconductor wafer along lines defined by the trenches.

Abstract: A method of manufacturing an array of semiconductor devices comprises providing a first carrier having multiple chip alignment regions. Multiple chips are placed over the multiple chip alignment regions. Then, alignment of the chips to the multiple chip alignment regions is obtained. The multiple chips are then placed on a second carrier. The first carrier is detached from the multiple chips. An encapsulation material is applied to the multiple chips to form an encapsulated array of semiconductor chips. The second carrier is then detached from the encapsulated array of semiconductor devices.

Abstract: A device including a semiconductor chip and metal foils. One embodiment provides a device including a semiconductor chip having a first electrode on a first face and a second electrode on a second face opposite to the first face. A first metal foil is attached to the first electrode of the semiconductor chip in an electrically conductive manner. A second metal foil is attached to the second electrode of the semiconductor chip in an electrically conductive manner.

Abstract: A device including a semiconductor chip. One embodiment provides a device, including a metal layer having a first layer face. A semiconductor chip includes a first chip face. The semiconductor chip is electrically coupled to and placed over the metal layer with the first chip face facing the first layer face. An encapsulation material covers the first layer face and the semiconductor chip. At least one through-hole extends from the first layer face through the encapsulation material. The at least one through-hole is accessible from outside the device.

Abstract: A method of producing semiconductor devices. One embodiment provides producing at least two semiconductor chips. An encapsulation material is applied to the at least two semiconductor chips to form an encapsulation layer. The at least two semiconductor chips are separated from each other to obtain at least two separated semiconductor devices. The outline of each one of the semiconductor devices includes three corners in total or more than four corners.

Abstract: A semiconductor device. In one embodiment the device includes a carrier. A first material is deposited on the carrier. The first material has an elastic modulus of less than 100 MPa. A semiconductor chip is placed over the first material. A second material is deposited on the semiconductor chip, the second material being electrically insulating. A metal layer is placed over the second material.

Abstract: A semiconductor device includes a semiconductor chip including a first conducting element, and a second conducting element arranged outside the semiconductor chip and electrically connected to the first conducting element at a first location. It further includes a third conducting element arranged outside the semiconductor chip and electrically connected to the first conducting element at a second location, and a fourth conducting element arranged outside the semiconductor chip. A vertical projection of the fourth conducting element on the chip crosses the first conducting element between the first location and the second location.

Abstract: A semiconductor module has a coupling substrate which is used for the internal electrical coupling of an integrated circuit on adjacent semiconductor chips. The semiconductor chips have integrated circuits and are arranged on a mount structure. The semiconductor chips are externally connected to external contacts. The coupling substrate overlaps edge areas of the adjacent semiconductor chips.

Abstract: A ball grid array housing, a semiconductor device having a ball grid array housing and an electronic circuit are disclosed. In one embodiment, a ball grid array housing includes a substrate with solder ball connections pointing out from a housing and at least one semiconductor chip. For better heat dissipation from the housing, the ball grid includes a metallic cooling foil, or a metallic cooling plate. A method of making a ball grid array is also disclosed.

Abstract: A system for distributing electrical power for a chip comprises a plurality of electrically conductive linear trunks arranged in a metallization layer of a chip, wherein the trunks are slanted with respect to the side edges of the chip. A further system for distributing electrical power for a chip comprises a plurality of electrically conductive straps, each one of the straps comprising two trunks connected to each other at a connection point, and a plurality of electrically conductive bumps or pads connected to the straps.

Abstract: A multichip module includes at least one first semiconductor chip and at least one second semiconductor chip. The semiconductor chips are arranged in coplanar fashion on or in a support medium and respectively include matching components and contact areas arranged on their active top sides. At least one second semiconductor chip includes an arrangement of contact areas which is mirror-inverted in relation to a first semiconductor chip. At least one first semiconductor chip and at least one second semiconductor chip are arranged next to and/or behind one another (i.e., adjacent to one another) such that those of their edges which respectively have a matching arrangement of contact areas are opposite one another. Wiring arrangements extend between respectively opposite contact areas and between contact areas at the outer edges of the semiconductor chips and external contacts.