Abstract: A lens cap for a transistor outline (TO) package is provided that has an inner diameter of less than 4 mm. The lens cap includes a metal shell with a wall thickness of less than 0.2 mm and a thinned area surrounding the lens so that in the thinned area the wall thickness is reduced by at least 35%.

Abstract: A photodiode with a lens cap is provided, having a header with a photodiode active surface area where the photodiode active surface area has a diameter dF. Further included is a cap having a fused-in lens, the fused-in lens having a diameter dL shown in a top plan view of the cap. The ratio of the diameter of the fused-in lens to the diameter of the photodiode active surface area, dL/dF, is greater than 30.

Abstract: A transistor outline (TO) package including a header with at least one optoelectronic device and a pot-shaped metal cap bonded to the header such that a hermetically sealed interior is formed for arranging the at least one optoelectronic device therein. The metal cap includes a window, which is transmissive to electromagnetic radiation, a lateral wall, and an end wall. A portion of the lateral wall and a portion of the end wall are formed with an increased thickness towards the interior compared to a portion of the lateral wall adjacent to the header. The thickened lateral wall portion and the thickened end wall portion have an identical wall thickness.

Abstract: A transistor outline (TO) package including a header with at least one optoelectronic device. The header is bonded to a pot-shaped metal cap, which has a window that is transmissive to electromagnetic radiation, such that the at least one optoelectronic device is arranged in a hermetically sealed interior. The wall of the metal cap has at least one lateral wall portion and/or end wall portion which is thickened towards the interior compared to a portion of the lateral wall of the metal cap adjacent to the header.

Abstract: A transistor outline (TO) package including a header with at least one optoelectronic device. The header is bonded to a pot-shaped metal cap, which has a window that is transmissive to electromagnetic radiation, such that the at least one optoelectronic device is arranged in a hermetically sealed interior. The wall of the metal cap has at least one lateral wall portion and/or end wall portion which is thickened towards the interior compared to a portion of the lateral wall of the metal cap adjacent to the header.

Abstract: A photodiode with a lens cap is provided, having a header with a photodiode active surface area where the photodiode active surface area has a diameter dF. Further included is a cap having a fused-in lens, the fused-in lens having a diameter & shown in a top plan view of the cap. The ratio of the diameter of the fused-in lens to the diameter of the photodiode active surface area, dL/dF, is greater than 30.

Abstract: A lens cap for a transistor outline (TO) package is provided that has an inner diameter of less than 4 mm. The lens cap includes a metal shell with a wall thickness of less than 0.2 mm and a thinned area surrounding the lens so that in the thinned area the wall thickness is reduced by at least 35%.

Abstract: A transistor outline housing is provided that has bonding wires on an upper surface. The bonding wires are reduced in length and have connection leads with an excess length at an end opposite the bonding end.