Patents by Inventor Georg Mittermeier

Georg Mittermeier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11367692
    Abstract: A lens cap for a transistor outline (TO) package is provided that has an inner diameter of less than 4 mm. The lens cap includes a metal shell with a wall thickness of less than 0.2 mm and a thinned area surrounding the lens so that in the thinned area the wall thickness is reduced by at least 35%.
    Type: Grant
    Filed: April 7, 2017
    Date of Patent: June 21, 2022
    Assignee: SCHOTT AG
    Inventors: Robert Hettler, Reinhard Ecker, Martin Lindner-Stettenfeld, Georg Mittermeier
  • Patent number: 11011654
    Abstract: A photodiode with a lens cap is provided, having a header with a photodiode active surface area where the photodiode active surface area has a diameter dF. Further included is a cap having a fused-in lens, the fused-in lens having a diameter dL shown in a top plan view of the cap. The ratio of the diameter of the fused-in lens to the diameter of the photodiode active surface area, dL/dF, is greater than 30.
    Type: Grant
    Filed: March 7, 2019
    Date of Patent: May 18, 2021
    Assignee: Schott AG
    Inventors: Robert Hettler, René Nauthe, Georg Mittermeier
  • Publication number: 20210033804
    Abstract: A transistor outline (TO) package including a header with at least one optoelectronic device and a pot-shaped metal cap bonded to the header such that a hermetically sealed interior is formed for arranging the at least one optoelectronic device therein. The metal cap includes a window, which is transmissive to electromagnetic radiation, a lateral wall, and an end wall. A portion of the lateral wall and a portion of the end wall are formed with an increased thickness towards the interior compared to a portion of the lateral wall adjacent to the header. The thickened lateral wall portion and the thickened end wall portion have an identical wall thickness.
    Type: Application
    Filed: October 21, 2020
    Publication date: February 4, 2021
    Applicant: Schott AG
    Inventors: Robert Hettler, Georg Mittermeier
  • Patent number: 10908371
    Abstract: A transistor outline (TO) package including a header with at least one optoelectronic device. The header is bonded to a pot-shaped metal cap, which has a window that is transmissive to electromagnetic radiation, such that the at least one optoelectronic device is arranged in a hermetically sealed interior. The wall of the metal cap has at least one lateral wall portion and/or end wall portion which is thickened towards the interior compared to a portion of the lateral wall of the metal cap adjacent to the header.
    Type: Grant
    Filed: March 20, 2019
    Date of Patent: February 2, 2021
    Assignee: Schott AG
    Inventors: Robert Hettler, Georg Mittermeier
  • Publication number: 20190293882
    Abstract: A transistor outline (TO) package including a header with at least one optoelectronic device. The header is bonded to a pot-shaped metal cap, which has a window that is transmissive to electromagnetic radiation, such that the at least one optoelectronic device is arranged in a hermetically sealed interior. The wall of the metal cap has at least one lateral wall portion and/or end wall portion which is thickened towards the interior compared to a portion of the lateral wall of the metal cap adjacent to the header.
    Type: Application
    Filed: March 20, 2019
    Publication date: September 26, 2019
    Applicant: Schott AG
    Inventors: Robert Hettler, Georg Mittermeier
  • Publication number: 20190280131
    Abstract: A photodiode with a lens cap is provided, having a header with a photodiode active surface area where the photodiode active surface area has a diameter dF. Further included is a cap having a fused-in lens, the fused-in lens having a diameter & shown in a top plan view of the cap. The ratio of the diameter of the fused-in lens to the diameter of the photodiode active surface area, dL/dF, is greater than 30.
    Type: Application
    Filed: March 7, 2019
    Publication date: September 12, 2019
    Applicant: Schott AG
    Inventors: Robert Hettler, René Nauthe, Georg Mittermeier
  • Publication number: 20170294390
    Abstract: A lens cap for a transistor outline (TO) package is provided that has an inner diameter of less than 4 mm. The lens cap includes a metal shell with a wall thickness of less than 0.2 mm and a thinned area surrounding the lens so that in the thinned area the wall thickness is reduced by at least 35%.
    Type: Application
    Filed: April 7, 2017
    Publication date: October 12, 2017
    Applicant: SCHOTT AG
    Inventors: Robert Hettler, Reinhard Ecker, Martin Lindner-Stettenfeld, Georg Mittermeier
  • Patent number: 9159634
    Abstract: A transistor outline housing is provided that has bonding wires on an upper surface. The bonding wires are reduced in length and have connection leads with an excess length at an end opposite the bonding end.
    Type: Grant
    Filed: January 17, 2014
    Date of Patent: October 13, 2015
    Assignee: SCHOTT AG
    Inventors: Robert Hettler, Kenneth Tan, Georg Mittermeier, Karsten Droegemueller