Abstract: The present invention provides a compound semiconductor layered structure comprising: a semiconductor substrate having a bottom surface and a top surface; and a compound semiconductor film on top of said semiconductor substrate, said compound semiconductor film comprising a porous, polycrystalline bottom layer in direct contact with said top surface of said semiconductor substrate, and methods of making the same.

Abstract: The present invention provides compound semiconductor layered structures comprising a semiconductor substrate having a bottom layer and a top layer; and a semiconductor film on top of said semiconductor substrate, said semiconductor film comprising a bottom layer, a core and a top layer, whereby said bottom layer of said semiconductor film is in contact with said top surface of said semiconductor substrate, and wherein said top layer is nonporous. Preferred compound semiconductors further comprise a semiconductor overlayer having a bottom surface layer and a top surface layer, whereby said bottom surface layer of said second semiconductor layer is in contact with said top layer of said semiconductor film. The present invention also provides process for preparing the same.

Abstract: A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a first trench is formed in a silicon carbide layer. A second trench is formed in the silicon carbide layer to define a mesa in the silicon carbide layer between the first trench and the second trench. A first doped semiconductor material is formed in the first trench and a second doped semiconductor material is formed in the second trench. A third doped semiconductor material is formed over the mesa to define a heterojunction at an interface between the third doped semiconductor material and the mesa.

Abstract: A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a first trench is formed in a silicon carbide layer. A second trench is formed in the silicon carbide layer to define a mesa in the silicon carbide layer between the first trench and the second trench. A first doped semiconductor material is formed in the first trench and a second doped semiconductor material is formed in the second trench. A third doped semiconductor material is formed over the mesa to define a heterojunction at an interface between the third doped semiconductor material and the mesa.