Abstract: A Random Number Generator includes a photon source, one or more photon detectors configured to detect at least one photon belonging to a flow of detected photons (?) generated by the photon source, an electronic sampler operatively associated with the photon detectors and configured to implement a logic method for the extraction of a binary sequence based on the arrival time of each one of the detected photons (?). In the Random Number Generator, the photon source and the photon detectors are adjacent to one another and integrated in a single semiconductor substrate.

Abstract: A Random Number Generator includes a photon source, one or more photon detectors configured to detect at least one photon belonging to a flow of detected photons (?) generated by the photon source, an electronic sampler operatively associated with the photon detectors and configured to implement a logic method for the extraction of a binary sequence based on the arrival time of each one of the detected photons (?). In the Random Number Generator, the photon source and the photon detectors are adjacent to one another and integrated in a single semiconductor substrate.

Abstract: A random number generator includes a photon source and one or more photon detectors of the SPAD type (311) configured to detect a photon flow equal to ?, wherein the photons are generated by the photon source. The random number generator furthermore includes an electronic sampler. The electronic sampler is configured in such a way as to detect the arrival time t of a photon incident on each SPAD photon detector (311) for each one of the observation windows Tw, and are also configured in such a way as to convert the arrival time t into a binary sequence. In the generator of the invention the photon source and the electronic sampler are configured in such a way that the product ?*Tw is lower than or equal to 0.01.

Abstract: An enhanced electrical yield is achieved with an integrated thermoelectric generator (iTEG) of out-of-plane heat flux configuration on a substrate wafer having hill-top junction metal contacts and valley-bottom junction metal contacts joining juxtaposed ends of segments, alternately p-doped and n-doped, of defined thin film lines of segments of a polycrystalline semiconductor, extending over inclined opposite flanks of hills of a material of lower thermal conductivity than the thermal conductivity of the thermoelectrically active polycrystalline semiconductor, by keeping void the valleys spaces (V) among the hills and delimited at the top by a planar electrically non conductive cover with metal bond pads defined over the coupling surface, adapted to bond with respective hill-top junction metal contacts. The junction metal contacts have a cross sectional profile of low aspect ratio, with two arms or wings overlapping the juxtaposed end portions of the segments.

Abstract: A random number generator includes a photon source and one or more photon detectors of the SPAD type (311) configured to detect a photon flow equal to ?, wherein the photons are generated by the photon source. The random number generator furthermore includes an electronic sampler. The electronic sampler is configured in such a way as to detect the arrival time t of a photon incident on each SPAD photon detector (311) for each one of the observation windows Tw, and are also configured in such a way as to convert the arrival time t into a binary sequence. In the generator of the invention the photon source and the electronic sampler are configured in such a way that the product ?*Tw is lower than or equal to 0.01.

Abstract: An enhanced electrical yield is achieved with an integrated thermoelectric generator (iTEG) of out-of-plane heat flux configuration on a substrate wafer having hill-top junction metal contacts and valley-bottom junction metal contacts joining juxtaposed ends of segments, alternately p-doped and n-doped, of defined thin film lines of segments of a polycrystalline semiconductor, extending over inclined opposite flanks of hills of a material of lower thermal conductivity than the thermal conductivity of the thermoelectrically active polycrystalline semiconductor, by keeping void the valleys spaces (V) among the hills and delimited at the top by a planar electrically non conductive cover with metal bond pads defined over the coupling surface, adapted to bond with respective hill-top junction metal contacts. The junction metal contacts have a cross sectional profile of low aspect ratio, with two arms or wings overlapping the juxtaposed end portions of the segments.