Abstract: A particulate matter sensor module includes a light source and a light detector mounted on a substrate. A housing is attached to the substrate and includes first and second sections attached to one another in a stack over the substrate such that the first section is disposed between the substrate and the second section. The first and second sections, in combination, define a light reflection chamber, a fluid flow conduit, a particle-light interaction chamber, and a light trap chamber. The first section has a first aperture through which light emitted by the light source can pass to a reflective surface within the light reflection chamber. The reflective surface is configured to reflect the light toward the particle-light interaction chamber where the light can interact with particles in a fluid flowing in the fluid flow conduit.

Abstract: A semiconductor body includes a driver for driving a light source, at least two detectors each including an avalanche diode, a time-to-digital converter arrangement coupled to outputs of the at least two detectors, a memory that is coupled to the time-to-digital converter arrangement and is configured to store at least one histogram, and an evaluation unit coupled to the driver and to the memory.

Abstract: A particulate matter sensor system for sensing particulate matter in a fluid includes a substrate and a cover disposed on the substrate. The cover defines at least a portion of a flow path through the microfluidic system. The sensor system includes a particulate matter sensor disposed in an interior space between the cover and the substrate. The particulate matter sensor includes an integrated sensor device electrically connected to the substrate. The flow path is defined through the particulate matter sensor. The sensor system includes a fluid circulation device disposed in the interior space between the cover and the substrate and configured to cause fluid to flow along the flow path through the microfluidic system.

Abstract: An optical sensor arrangement for time-of-flight comprises a first and a second cavity separated by an optical barrier and covered by a cover arrangement. An optical emitter is arranged in the first cavity, a measurement and a reference photodetector are arranged in the second cavity. The cover arrangement comprises a plate and layers of material arranged on an inner main surface thereof. The layers comprise an opaque coating with a first and second aperture above the first cavity, and with a third and fourth aperture above the second cavity. The measurement photodetector is configured to detect light entering the second cavity through the fourth aperture. The second and the third aperture establish a reference path for light from the emitter to the reference photodetector.

Abstract: A particulate matter sensor module includes a light source and a light detector mounted on a substrate. A housing is attached to the substrate and includes first and second sections attached to one another in a stack over the substrate such that the first section is disposed between the substrate and the second section. The first and second sections, in combination, define a light reflection chamber, a fluid flow conduit, a particle-light interaction chamber, and a light trap chamber. The first section has a first aperture through which light emitted by the light source can pass to a reflective surface within the light reflection chamber. The reflective surface is configured to reflect the light toward the particle-light interaction chamber where the light can interact with particles in a fluid flowing in the fluid flow conduit.

Abstract: A single photon avalanche diode, SPAD, comprises an active area which is arranged to generate a photon triggered avalanche current. A cover is arranged on or above the active area. The cover shields the active area from incident photons. The cover comprises a stack of at least the first and a second metal layer. At least one of the metal layers, e.g. the first metal layer, comprises an aperture. The metal layers are arranged in the stack with respect to an optical axis such as to open an effective aperture along the optical axis. By way of the effective aperture a portion of the active area is exposed to incident photons being incident along the optical axis. The effective aperture is smaller than the aperture arranged in the first metal layer.

Abstract: A Hall sensor has at least four sensor terminals for connecting the Hall sensor and a plurality of Hall sensing element shaving element terminals. The Hall sensing elements are interconnected with the element terminals in a connection grid in between the sensor terminals, the connection having more than one dimension. The Hall sensing elements are physically arranged in an arrangement grid having more than one dimension and being different from the connection grid. At least some of the Hall sensing elements are connected to at least two adjacent Hall sensing elements in the connection grid.

Abstract: The device comprises a bipolar transistor with emitter, base, collector, base-collector junction and base-emitter junction, a collector-to-base breakdown voltage, a quenching component electrically connected with the base or the collector, and a switching circuitry configured to apply a forward bias to the base-emitter junction. The bipolar transistor is configured for operation at a reverse collector-to-base voltage above the breakdown voltage.

Abstract: An apparatus for sensing particulate matter in a fluid includes a first substrate; and a sensing device electrically integrated with the first substrate, the sensing device having a receiving surface. The apparatus includes a second substrate separated from the first substrate by a gap. The apparatus includes a heating element disposed in the gap between the first substrate and the second substrate and connected to the second substrate by a post. The heating element is aligned with the receiving surface of the sensing device, and a microfluidic channel is defined between the first substrate and the heating element.

Abstract: An apparatus for sensing particulate matter in a fluid includes a substrate; and an integrated circuit electrically connected to the substrate, the integrated circuit including a photodetector. The apparatus includes a filter assembly including a particle filter aligned with the photodetector, and a filter housing for the particle filter, the filter housing defining a flow path for fluid through the particle filter. The apparatus includes a light source electrically connected to the substrate and positioned to illuminate the particle filter.

Abstract: A particulate matter sensor system for sensing particulate matter in a fluid includes a substrate and a cover disposed on the substrate. The cover defines at least a portion of a flow path through the microfluidic system. The sensor system includes a particulate matter sensor disposed in an interior space between the cover and the substrate. The particulate matter sensor includes an integrated sensor device electrically connected to the substrate. The flow path is defined through the particulate matter sensor. The sensor system includes a fluid circulation device disposed in the interior space between the cover and the substrate and configured to cause fluid to flow along the flow path through the microfluidic system.

Abstract: A semiconductor body comprises a driver for driving a light source, at least two detectors each comprising an avalanche diode, a time-to-digital converter arrangement coupled to outputs of the at least two detectors, a memory that is coupled to the time-to-digital converter arrangement and is configured to store at least one histogram, and an evaluation unit coupled to the driver and to the memory.

Abstract: A single photon avalanche diode, SPAD, comprises an active area which is arranged to generate a photon triggered avalanche current. A cover is arranged on or above the active area. The cover shields the active area from incident photons. The cover comprises a stack of at least the first and a second metal layer. At least one of the metal layers, e.g. the first metal layer, comprises an aperture. The metal layers are arranged in the stack with respect to an optical axis such as to open an effective aperture along the optical axis. By way of the effective aperture a portion of the active area is exposed to incident photons being incident along the optical axis. The effective aperture is smaller than the aperture arranged in the first metal layer.

Abstract: The device comprises a bipolar transistor with emitter, base, collector, base-collector junction and base-emitter junction, a collector-to-base breakdown voltage, a quenching component electrically connected with the base or the collector, and a switching circuitry configured to apply a forward bias to the base-emitter junction. The bipolar transistor is configured for operation at a reverse collector-to-base voltage above the breakdown voltage.

Abstract: A well of a first type of conductivity is formed in a semiconductor substrate, and wells of a second type of conductivity are formed in the well of the first type of conductivity at a distance from one another. By an implantation of dopants, a doped region of the second type of conductivity is formed in the well of the first type of conductivity between the wells of the second type of conductivity and at a distance from the wells of the second type of conductivity. Source/drain contacts are applied to the wells of the second type of conductivity, and a gate dielectric and a gate electrode are arranged above regions of the well of the first type of conductivity that are located between the wells of the second type of conductivity and the doped region of the second type of conductivity.

Abstract: An optical sensor arrangement for time-of-flight comprises a first and a second cavity separated by an optical barrier and covered by a cover arrangement. An optical emitter is arranged in the first cavity, a measurement and a reference photodetector are arranged in the second cavity. The cover arrangement comprises a plate and layers of material arranged on an inner main surface thereof. The layers comprise an opaque coating with a first and second aperture above the first cavity, and with a third and fourth aperture above the second cavity. The measurement photodetector is configured to detect light entering the second cavity through the fourth aperture. The second and the third aperture establish a reference path for light from the emitter to the reference photodetector.

Abstract: The field effect transistor device comprises a substrate (1) of semiconductor material, a body well of a first type of electric conductivity in the substrate, a source region in the body well, the source region having an opposite second type of electric conductivity, a source contact (3) on the source region, a body contact region of the first type of electric conductivity in the body well, a body contact (5) on the body contact region, and a gate electrode layer (2) partially overlapping the body well. A portion (2*) of the gate electrode layer (2) is present between the source contact (3) and the body contact (5).

Abstract: A Hall sensor has at least four sensor terminals for connecting the Hall sensor and a plurality of Hall sensing element shaving element terminals. The Hall sensing elements are interconnected with the element terminals in a connection grid in between the sensor terminals, the connection having more than one dimension. The Hall sensing elements are physically arranged in an arrangement grid having more than one dimension and being different from the connection grid. At least some of the Hall sensing elements are connected to at least two adjacent Hall sensing elements in the connection grid.

Abstract: A bolometer (10) comprises a first and a second suspension beam (12, 13) and a semiconductor portion (11) that is suspended by the first and the second suspension beam (12, 13) and comprises a first region (17) of a first conductivity type and a second region (18) of a second conductivity type. The first region (17) comprises a first triangle (21) or at least two stripes (40, 41) or islands (60, 61) which each contribute to a non-short-circuited diode (20) with the second region (18).

Abstract: The field effect transistor device comprises a substrate (1) of semiconductor material, a body well of a first type of electric conductivity in the substrate, a source region in the body well, the source region having an opposite second type of electric conductivity, a source contact (3) on the source region, a body contact region of the first type of electric conductivity in the body well, a body contact (5) on the body contact region, and a gate electrode layer (2) partially overlapping the body well. A portion (2*) of the gate electrode layer (2) is present between the source contact (3) and the body contact (5).