Abstract: A PVD method and a PVD apparatus use a rotating magnetic field in order to increase the yield. The magnetic field is provided such that it essentially vanishes, at least in a time average, outside a rotation axis of the magnetic field in sectors of the target region of the PVD apparatus. In this manner the PVD method and the PVD apparatus achieve a uniform coating.

Abstract: Tungsten silicide layers are formed on a substrate and a semiconductor component has deep trench capacitors with a filling of tungsten silicide. The tungsten silicide layers are deposited on the substrate at a temperature of less than 400° C. and at a pressure of less than 10 torr from the vapor phase. The vapor phase hs a tungsten-containing precursor substance and a silicon-containing precursor substance. The molar ratio of the silicon-containing precursor compound to the tungsten-containing precursor compound in the vapor phase is selected to be greater than 500.

Abstract: The invention relates to a method for fabricating a microtechnical structure (28) having a depression (25), which has a high aspect ratio. In order to achieve a good filling behavior, it is proposed to increase the quantity of the passivating particles which are present in the reactor and passivate the surface of the structure (28) against further addition of the filling material (30). With suitable process control, the additional passivation has an effect essentially only on the side walls (27) of the depression (25).