Patents by Inventor George A. Kovall

George A. Kovall has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7297628
    Abstract: Inwardly-tapered openings are created in an Anti-Reflection Coating layer (ARC layer) provided beneath a patterned photoresist layer. The smaller, bottom width dimensions of the inwardly-tapered openings are used for defining further openings in an interlayer dielectric region (ILD) provided beneath the ARC layer. In one embodiment, the ILD separates an active layers set of an integrated circuit from its first major interconnect layer. Further in one embodiment, a taper-inducing etch recipe is used to create the inwardly-tapered ARC openings, where the etch recipe uses a mixture of CF4 and CHF3 and where the CF4/CHF3 volumetric inflow ratio is substantially less than 5 to 1, and more preferably closer to 1 to 1.
    Type: Grant
    Filed: November 19, 2003
    Date of Patent: November 20, 2007
    Assignee: Promos Technologies, Inc.
    Inventors: Chunyuan Chao, Kuei-Chang Tsai, George A. Kovall
  • Publication number: 20040192059
    Abstract: A method of plasma etching a metal stack on a semiconductor wafer is presented. The metal stack includes an aluminum layer overlaid with a titanium-containing anti-reflective coating (ARC) layer. The method includes flowing a fluorine-containing species (e.g., SF6) and a chlorine-containing species (e.g., BCl3 and Cl2) into a plasma etch chamber while etching the titanium-containing ARC layer.
    Type: Application
    Filed: March 28, 2003
    Publication date: September 30, 2004
    Applicant: Mosel Vitelic, Inc.
    Inventors: Woody K. Sattayapiwat Tang, George A. Kovall