Abstract: A monolithic semiconductor integrated circuit-ferroelectric device is disclosed together with the method of manufacturing same. The ferroelectric device preferably consists of a layer of stable ferroelectric potassium nitrate disposed between electrical contacts positioned on opposite surfaces of the ferroelectric layer. The ferroelectric layer has a thickness of less than 110 microns, and preferably falling within a range of from 100 Angstrom units to 25,000 Angstrom units. The process of manufacturing the monolithic structure is multi-stepped and is particularly adapted for fabricating a potassium nitrate ferroelectric memory on a semiconductor integrated circuit.

Abstract: A monolithic semiconductor integrated circuit-ferroelectric device is disclosed together with the method of manufacturing same. The ferroelectric device preferably consists of a layer of stable ferroelectric potassium nitrate disposed between electrical contacts positioned on opposite surfaces of the ferroelectric layer. The ferroelectric layer has a thickness of less than 110 microns, and preferably falling within a range of from 100 Angstrom units to 25,000 Angstrom units. The process of manufacturing the monolithic structure is multi-stepped and is particularly adapted for fabricating a potassium nitrate ferroelectric memory on a semiconductor integrated circuit.

Abstract: Methods for forming targets of ferroelectric, metal nitrate or similar material, methods for depositing such materials using ion beam techniques, and a method for forming a combined and integrated circuit/ferroelectric memory device wherein the ferroelectric material is deposited using ion beam techniques.

Abstract: A monolithic semiconductor integrated circuit-ferroelectric device is disclosed together with the method of manufacturing same. The ferrelectric device preferably consists of a layer of stable ferroelectric potassium nitrate disposed between electrical contacts positioned on opposite surfaces of the ferroelectric layer. The ferroelectric layer has a thickness of less than 110 microns, and preferably falling within a range of from 100 Angstrom units to 5,000 Angstrom units. The process of manufacturing the monolithic structure is multi-stepped and is particularly adapted for fabricating a potassium nitrate ferroelectric memory on a semiconductor integrated circuit.

Abstract: A process for manufacturing a ferroelectric device includes the steps of chemically cleaning a substrate, followed by radio frequency etching of the substrate. The substrate is then pre-heated. A first electrical contact is then formed on the substrate, and over a portion of the first electrical contact there is vapor deposited a stable thin film of potassium nitrate. Then a second electrical contact is formed over at least a part of the thin film of potassium nitrate. A covering of silicon monoxide is then vacuum deposited over the assemblage of the first and second electrical contacts and the potassium nitrate. The assemblage is then annealed for approximately twenty-four hours at a temperature of approximately 160.degree. C.

Abstract: A ferroelectric Phase III potassium nitrate (KNO.sub.3) which is stable at ambient temperatures is produced in accordance herewith by crystallizing reagent grade KNO.sub.3 under vacuum and heat and, then, equilibrating the resultant to ambient conditions. This stable Phase III KNO.sub.3 which is of crystalline structure exhibits visual and optical effects when subjected to mechanical and electrical alteration of the polarization vector of the crystalline structure, thus, rendering it useful in the manufacture of transparent electrodes by interposing this crystalline material between the electrodes, and the like. Furthermore, ferroelectric thin film memory arrays can be produced herefrom.