Patents by Inventor George A. Rozgonyi

George A. Rozgonyi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating patterned epitaxial silicon films utilizing molecular beam epitaxy
    Patent number: 5134090
    Abstract: A method of producing patterned epitaxial silicon films and devices fabricated thereby is described. The method forms a first layer of a refractory material on a substrate and pattern delineates the first layer. Silicon is then deposited at a temperature within the range between 400 degrees C. and 700 degrees C. and the polycrystalline material that forms is removed.
    Type: Grant
    Filed: June 12, 1989
    Date of Patent: July 28, 1992
    Assignee: AT&T Bell Laboratories
    Inventors: John C. Bean, George A. Rozgonyi
  • Patterned epitaxial regrowth using overlapping pulsed irradiation
    Patent number: 4234358
    Abstract: A technique isdescribed for removing defects and disorder from crystalline layers and the epitaxial regrowth of such layers. The technique involves depositing short term bursts of energy over a limited spatial region of a material thereby annealing the otherwise damaged material and causing it to epitaxially regrow. Subsequent to the short term energy deposition, similar processing is sequentially effected on adjoining and overlapping regions such that a pattern is ultimately "written". This pattern forms a continuous region of essentially single crystal material.
    Type: Grant
    Filed: April 5, 1979
    Date of Patent: November 18, 1980
    Assignees: Western Electric Company, Inc., Bell Telephone Laboratories, Incorporated
    Inventors: George K. Celler, Lionel C. Kimerling, Harry J. Leamy, John M. Poate, George A. Rozgonyi