Patents by Inventor George A. Swartz

George A. Swartz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating a radiation hardened oxide having two portions
    Patent number: 4675978
    Abstract: A method for making a partially radiation hardened oxide comprises forming a first portion of an oxide layer on a semiconductor body of material at a temperature between about 950.degree. C. and 1400.degree. C., preferably between about 1000.degree. C. and 1200.degree. C. Thereafter a second portion of the oxide layer is formed between the semiconductor body and the first oxide layer at a temperature between about 850.degree. C. and 900.degree. C., preferably at about 875.degree. C.
    Type: Grant
    Filed: September 9, 1985
    Date of Patent: June 30, 1987
    Assignee: RCA Corporation
    Inventor: George A. Swartz
  • Method for fabricating a radiation hardened oxide having structural damage
    Patent number: 4634473
    Abstract: A method for making a partially radiation hardened oxide adjacent an edge comprises forming an oxide layer on another layer with a temperature between about 975.degree. C. and 1400.degree. C., preferably between about 1000.degree. C. and 1200.degree. C. Then the structure of the oxide layer is damaged, such as by ion implantation, preferably with an inert element. Thereafter the oxide layer is annealed at a temperature between about 850.degree. C. and 900.degree. C., preferably at about 875.degree. C.
    Type: Grant
    Filed: September 9, 1985
    Date of Patent: January 6, 1987
    Assignee: RCA Corporation
    Inventors: George A. Swartz, Carl W. Benyon, Jr.
  • Series connected solar cells on a single substrate
    Patent number: 4443651
    Abstract: Series connected amorphous silicon solar cells which are formed on a single substrate are described. Also described are methods of inexpensively forming such series connected amorphous silicon solar cells.
    Type: Grant
    Filed: December 16, 1982
    Date of Patent: April 17, 1984
    Assignee: RCA Corporation
    Inventor: George A. Swartz
  • Electrolytic etch for eliminating shorts and shunts in large area amorphous silicon solar cells
    Patent number: 4385971
    Abstract: The present invention relates to a method for removing electrical shorts and shunts from solar cells, such as amorphous silicon solar cells. The method involves back-biasing the solar cells while they are in an electrolytic solution. It has been found that the process results in the removal of the shorts and shunts present in the cell.
    Type: Grant
    Filed: June 26, 1981
    Date of Patent: May 31, 1983
    Assignee: RCA Corporation
    Inventor: George A. Swartz