Abstract: An optical metrology device performs multi-wavelength polarized confocal Raman spectroscopy. The optical metrology device uses a first light source to produce a first light beam with a first wavelength and a second light source to produce a second light beam with a second wavelength. A dichroic beam splitter partially reflects the first light beam and transmits the second light beam to combine the light beams along a same optical axis that is incident on a sample. The dichroic beam splitter directs the Raman response emitted from the sample in response to the first light beam and the second light beam together towards at least one spectrometer and directs the first light beam away from the at least one spectrometer. A chopper may be used to isolate the Raman response to the first and second light beams that is received and spectrally measured by the at least one spectrometer.

Abstract: An alignment or overlay target that has an optically opaque layer disposed between the top and bottom target structure is measured using opto-acoustic metrology. A classifier library is generated for classifying whether an opto-acoustic metrology signal is on or off the bottom structure. A target may be measured by acquiring opto-acoustic measurement data for the bottom structure of the target and determining a location of the bottom structure using opto-acoustic metrology data acquired from the different locations over the bottom structure and the classifier library. Locations for acquisition of the data may be based on classification results of each measurement and a search pattern. The top structure of the target may be optically imaged. The relative position of the top structure with respect to the bottom structure is determined using the opto-acoustically determined location of the bottom structure and the image of the top structure.

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

Abstract: A metrology target is designed for measuring a feature at the bottom of a trench in a device under test, such as a tungsten recess vertical profile in a wordline in a three-dimensional (3D) NAND. The metrology target follows the design rules for the device under test and includes a tier stack with a plurality of tier stack pairs including, each including a conductor layer, such as tungsten, and an insulator layer, such as silicon dioxide and a trench that extends through the tier stack pairs. The metrology target includes a via that extends through the tier stack pairs and is positioned a lateral distance to the trench to promote access of light to a bottom of the trench, via plasmonic resonance, for measurement of a characteristic of the trench, such as the tungsten recess at the bottom of the wordline slit.

Abstract: An optical metrology device performs multi-wavelength polarized confocal Raman spectroscopy. The optical metrology device uses a first light source to produce a first light beam with a first wavelength and a second light source to produce a second light beam with a second wavelength. A dichroic beam splitter partially reflects the first light beam and transmits the second light beam to combine the light beams along a same optical axis that is incident on a sample. The dichroic beam splitter directs the Raman response emitted from the sample in response to the first light beam and the second light beam together towards at least one spectrometer and directs the first light beam away from the at least one spectrometer. A chopper may be used to isolate the Raman response to the first and second light beams that is received and spectrally measured by the at least one spectrometer.

Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

Abstract: A non-destructive opto-acoustic metrology device detects the presence and location of non-uniformities in a film stack that includes a large number, e.g., 50 or more, transparent layers. A transducer layer at the bottom of the film stack produces an acoustic wave in response to an excitation beam. A probe beam is reflected from the layer interfaces of the film stack and the acoustic wave to produce an interference signal that encodes data in a time domain from destructive and constructive interference as the acoustic wave propagates upward in the film stack. The data may be analyzed across the time domain to determine the presence and location of one or more non-uniformities in the film stack. An acoustic metrology target may be produced with a transducer layer configured to generate an acoustic wave with a desired acoustic profile based on characteristics of the film stack.

Abstract: A non-destructive opto-acoustic metrology device detects the presence and location of non-uniformities in a film stack that includes a large number, e.g., 50 or more, transparent layers. A transducer layer at the bottom of the film stack produces an acoustic wave in response to an excitation beam. A probe beam is reflected from the layer interfaces of the film stack and the acoustic wave to produce an interference signal that encodes data in a time domain from destructive and constructive interference as the acoustic wave propagates upward in the film stack. The data may be analyzed across the time domain to determine the presence and location of one or more non-uniformities in the film stack. An acoustic metrology target may be produced with a transducer layer configured to generate an acoustic wave with a desired acoustic profile based on characteristics of the film stack.

Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

Abstract: A metrology device that can determine at least one characteristics of a sample is disclosed. The metrology device includes an optical system that uses spatially coherent light with a first and a second objective lens as well as a detector that detects light reflected from the sample. The objective lenses use numerical apertures sufficient to produce a small probe size, e.g., less than 200 ?m, while a spatial filter is used to reduce the effective numerical aperture of the optical system as seen by the detector to avoid loss of information and demanding computation requirements caused by the large angular spread due to large numerical apertures. The spatial filter permits light to pass in a desired range of angles, while blocking the remaining light and is positioned to prevent use of the full spatial extent of at least one of the first objective lens and the second objective lens.

Abstract: A metrology target is designed for measuring a feature at the bottom of a trench in a device under test, such as a tungsten recess vertical profile in a wordline in a three-dimensional (3D) NAND. The metrology target follows the design rules for the device under test and includes a tier stack with a plurality of tier stack pairs including, each including a conductor layer, such as tungsten, and an insulator layer, such as silicon dioxide and a trench that extends through the tier stack pairs. The metrology target includes a via that extends through the tier stack pairs and is positioned a lateral distance to the trench to promote access of light to a bottom of the trench, via plasmonic resonance, for measurement of a characteristic of the trench, such as the tungsten recess at the bottom of the wordline slit.

Abstract: An optical metrology device produces beams of light with varying wavelengths in a spectral range for measurement of a sample that is at least partially transparent to the spectral range. The light is obliquely incident on the sample, where a portion of the light is reflected off the top surface and a portion is transmitted through the sample and is reflected off the bottom surface. The incident light and/or reflected light is polarized and a phase modulator, such as a photoelastic modulator or electrooptic modulator, is adjusted based on the wavelengths in each beam of light to produce a same retardation of polarization for each beam of light. The reflected light that is received by a detector does not include light reflected from the bottom surface of the sample. A characteristic of a buried structure below the top surface of the sample is determined using the detected reflected light.

Abstract: A metrology device that can determine at least one characteristics of a sample is disclosed. The metrology device includes an optical system that uses spatially coherent light with a first and a second objective lens as well as a detector that detects light reflected from the sample. The objective lenses use numerical apertures sufficient to produce a small probe size, e.g., less than 200 ?m, while a spatial filter is used to reduce the effective numerical aperture of the optical system as seen by the detector to avoid loss of information and demanding computation requirements caused by the large angular spread due to large numerical apertures. The spatial filter permits light to pass in a desired range of angles, while blocking the remaining light and is positioned to prevent use of the full spatial extent of at least one of the first objective lens and the second objective lens.

Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

Abstract: An optical metrology device produces light in a spectral range for measurement of a sample using a tunable Quantum Cascade Laser (QCL). The optical metrology device includes a second channel that is used to diagnose when the tunable QCL is in failure mode, e.g., when it is not producing all wavelengths in the plurality of different wavelength ranges. The second channel includes at least one optical flat that is transmissive to the light produced by the QCL and is separate from the tunable QCL. The optical flat is switchably placed in a beam path of the light produced by the tunable QCL and light transmitted through the optical flat is received by a detector. Using output signals from the detector, a failure mode of the tunable QCL may be determined.

Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.