Abstract: A chemical vapor deposition (CVD) process and apparatus for the growth of diamond films using vapor mixtures of selected compounds having desired moieties, specifically precursors that provide carbon and etchant species that remove graphite. The process involves two steps. In the first step, feedstock gas enters a conversion zone. In the second step, by-products from the conversion zone proceed to an atomization zone where diamond is produced. In a preferred embodiment a feedstock gas phase mixture including at least 20% water which provides the etchant species is reacted with an alcohol which provides the requisite carbon precursor at low temperature (55.degree.-1100.degree. C.) and low pressure (0.1 to 100 Torr), preferably in the presence of an organic acid (acetic acid) which contributes etchant species reactant. In the reaction process, the feedstock gas mixture is converted to H.sub.2, CO, C.sub.2 H.sub.2, no O.sub.2, with some residual water. Oxygen formerly on the water is transferred to CO.

Abstract: A chemical vapor deposition (CVD) technique (process and apparatus) for the growth of diamond films using vapor mixtures of selected compounds having desired moieties, specifically precursors that provide carbon and etchant species that remove graphite disclosed. The selected compounds are reacted in a plasma created by a confined rf discharge to produce diamond films on a diamond or a non-diamond substrate. In a preferred embodiment a gas phase mixture including at least 20% water which provides the etchant species is reacted with an alcohol which provides the requisite carbon precursor at low temperature (300.degree.-650.degree. C.) and low pressure (0.1 to 10 Torr), preferably in the presence of an organic acid (acetic acid) which contributes etchant species reactant. In the preferred embodiment the volumetric mixtures have typically been 40-80% water and 60-20% alcohol. The gaseous mixture of H.sub.2 O and alcohol is dissociated to produce H, OH, and carbon radicals.