Patents by Inventor George Cirlin

George Cirlin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure for use in the near infrared region and a method of manufacturing this semiconductor structure
    Patent number: 7119358
    Abstract: The invention relates to a semiconductor structure for use in the near infrared region, preferably in the range from 1.3 to 1.6 ?m, said structure comprising an active zone consisting of a plurality of epitaxially grown alternating layers of Si and Ge, a base layer of a first conductivity type disposed on one side of said active zone, and a cladding layer of the opposite conductivity type to the base layer, the cladding layer being provided on the opposite side of said active zone from said base layer, wherein the alternating Si and Ge layers of said active zone form a superlattice so that holes are located in quantized energy levels associated with a valance band and electrons are localized in a miniband associated with the conduction band and resulting from the superlattice structure. The invention is also directed to a method of manufacturing aforementioned structure.
    Type: Grant
    Filed: November 25, 2003
    Date of Patent: October 10, 2006
    Assignee: Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
    Inventors: Peter Werner, Viatcheslav Egorov, Vadim Talalaev, George Cirlin, Nikolai Zakharov
  • Semiconductor structure for use in the near infrared region and a method of manufacturing this semiconductor structure
    Publication number: 20040140531
    Abstract: The invention relates to a semiconductor structure for use in the near infrared region, preferably in the range from 1.3 to 1.6 &mgr;m, said structure comprising an active zone consisting of a plurality of epitaxially grown alternating layers of Si and Ge, a base layer of a first conductivity type disposed on one side of said active zone, and a cladding layer of the opposite conductivity type to the base layer, the cladding layer being provided on the opposite side of said active zone from said base layer, wherein the alternating Si and Ge layers of said active zone form a superlattice so that holes are located in quantized energy levels associated with a valance band and electrons are localized in a miniband associated with the conduction band and resulting from the superlattice structure. The invention is also directed to a method of manufacturing aforementioned structure.
    Type: Application
    Filed: November 25, 2003
    Publication date: July 22, 2004
    Applicant: Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V., a German Corporation
    Inventors: Peter Werner, Viatcheslav Egorov, Vadim Talalaev, George Cirlin, Nikolai Zakharov