Abstract: A process of manufacturing silicon solar cells with efficiencies of between about 12.5% and about 16.0% is described, the method being characterized by forming a P/N junction adjacent the front surface of a silicon substrate, subjecting the front surface of the substrate to a selected plasma surface etch treatment, and then forming a polysilazane coating on the etched front surface by (a) first subjecting the substrate to an ammonia plasma treatment for a predetermined period of time so as to produce hydrogen implantation and (b) subjecting the subtrate to a silane and ammonia plasma treatment to obtain additional hydrogen implantation and formation of a polysilazane (hydrogenated silicon nitride) coating. The polysilazane coating is etched to form a grid electrode pattern. An aluminum coating is applied to the rear side of the substrate so as to form a back electrode. The aluminum coating is heated so as to alloy with the silicon substrate and thereby form an ohmic contact.