Abstract: New photosensitive polyamic acid precursors are disclosed which have the formula: ##STR1## where Z is a tetravalent organic radical which contains at least one aromatic ring, Z' is a divalent organic radical which contains at least one aromatic ring, and R* is a photo polymerizable group. Particularly preferred compounds include BPDA-PDA and BPDA-ODA polyamic acid precursors. The precursor compositions within the practice of this invention are i-line, g-line, and i-/g-line active and show good photoresolution. The films formed exhibit excellent self-adhesion and adhesion to glass ceramic and silicon wafer substrates have low internal stress, a very low degree of solvent swelling, high thermal stability, and excellent mechanical properties such as high modulus/tensile strength and high elongation at break.

Abstract: New photosensitive polyamic acid precursors are disclosed which have the formula: ##STR1## where Z is a tetravalent organic radical which contains at least one aromatic ring, Z' is a divalent organic radical which contains at least one aromatic ring, and R* is a photosensitive group. Particularly preferred compounds include BPDA-PDA and BPDA-ODA polyamic acid precursors. The precursor compositions within the practice of this invention are i-line, g-line, and i-/g-line active and show good photoresolution. The films formed exhibit excellent self-adhesion and adhesion to glass ceramic and silicon wafer substrates have low internal stress, a very low degree of solvent swelling, high thermal stability, and excellent mechanical properties such as high modulus/tensile strength and high elongation at break.

Abstract: A high density array of pinless electrical, spring connectors are supported in an electrically insulative carrier. The carrier has an array of cavity nests for receiving the spring connectors, locking them into a stable position and functioning as an electrical coupler between corresponding electrical contact pads in stacked modules.

Abstract: The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

Abstract: A method of making a multilayer thin film structure on the surface of a dielectric substrate which includes the steps of:a. forming a multilayer thin film structure including the steps of:applying a first layer of dielectric polymeric material on the surface of a dielectric substrate,applying a second layer of dielectric polymeric material over the first layer of polymeric material wherein the second polymeric material is photosensitive,imagewise exposing and developing the second polymeric material to form a feature therein, the second layer feature in communication with at least one feature formed in the first polymeric material; andb. filling the features in the entire multilayer structure simultaneously with conductive material.Preferably, the first layer feature is a via and the second layer feature is a capture pad or wiring channel. Also disclosed is a multilayer thin film structure made by this method.

Abstract: The present invention provides a packaging semiconductor structure and method for obtaining same. The structure is comprised of at least one level of dielectric and metallurgy layers. The at least one level is comprised of a wiring metallurgy plane and a "through-via" plane of interconnecting metallurgy in association with both one and two layers of polymeric dielectric materials. The self-alignment method of fabrication of the level provides a streamlined technique wherein stringent masking and alignment requirements are relaxed, undue processing such as at least one polishing step is eliminated and a structure having adhesive integrity is fabricated.

Abstract: Disclosed is a ceramic substrate having a protective coating on at least one surface thereof which includes:a ceramic substrate having at least one electrically conductive via extending to a surface of the substrate;an electrically conductive I/O pad electrically connected to at least one of the vias;an I/O pin brazed to the I/O pad, the brazed pin having a braze fillet; anda protective layer of polymeric material fully encapsulating the I/O pad, wherein the layer of polymeric material protects the I/O pad from corrosion.

Abstract: The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addresssed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

Abstract: The present invention provides a packaging semiconductor structure and method for obtaining same. The structure is comprised of at least one level of dielectric and metallurgy layers. The at least one level is comprised of a wiring metallurgy plane and a "through-via" plane of interconnecting metallurgy in association with both one and two layers of polymeric dielectric materials. The self-alignment method of fabrication of the level provides a streamlined technique wherein stringent masking and alignment requirements are relaxed, undue processing such as at least one polishing step is eliminated and a structure having adhesive integrity is fabricated.

Abstract: The photosensitivity of a particular group of polymerizable oligomers permits radiation induced polymerization. This photosensitivity thus enables the polymerizable oligomers to be used as photoresists in general, and facilitates in situ cure when the oligomers are used to produce isolation films and trenches in semiconductor devices. The photosensitivity further enables use of a simplified planarization process when the polymerizable oligomers are used in the fabrication of semiconductor structures and integrated circuit components. Specifically, the polymerizable oligomers are comprised of poly N-substituted amic acids, the corresponding amic esters, the corresponding amic isoimides, the corresponding amic imids or mixtures thereof, wherein the end groups of the polymerizable oligomer are end capped with a vinyl or acetylinic end group.

Abstract: A protective coating is formed on an integrated circuit device by coating the device with a solution of acetylene terminated, branched polyphenylene prepolymer material and heating the material to form a thermoset crosslinked polymer layer. Selectively patterned portions may be provided when, after the coating step and prior to the heating step, the steps of imagewise exposure to radiation and rinsing with an organic solvent are carried out.

Abstract: A substrate surface is lubricated or passivated by applying thereto a monomolecular layer of a compound having the formula ##STR1## wherein n is 6 to 20, each of m and L is 6 to 10, X is --CH.dbd.CH--or --C.tbd.C--, and M is a divalent cation, and polymerizing said layer in situ.