Abstract: Engineered substrates having epitaxial formation structures with enhanced shear strength and associated systems and methods are disclosed herein. In several embodiments, for example, an engineered substrate can be manufactured by forming a shear strength enhancement material at a front surface of a donor substrate and implanting ions a depth into the donor substrate through the shear strength enhancement material. The ion implantation can form a doped portion in the donor substrate that defines an epitaxial formation structure. The method can further include transferring the epitaxial formation structure from the donor substrate to a front surface of a handle substrate. The shear strength enhancement material can be positioned between the epitaxial formation structure and the front surface of the handle substrate and bridge defects in the front surface of the handle substrate.

Abstract: Engineered substrates having epitaxial formation structures with enhanced shear strength and associated systems and methods are disclosed herein. In several embodiments, for example, an engineered substrate can be manufactured by forming a shear strength enhancement material at a front surface of a donor substrate and implanting ions a depth into the donor substrate through the shear strength enhancement material. The ion implantation can form a doped portion in the donor substrate that defines an epitaxial formation structure. The method can further include transferring the epitaxial formation structure from the donor substrate to a front surface of a handle substrate. The shear strength enhancement material can be positioned between the epitaxial formation structure and the front surface of the handle substrate and bridge defects in the front surface of the handle substrate.

Abstract: Engineered substrates having epitaxial formation structures with enhanced shear strength and associated systems and methods are disclosed herein. In several embodiments, for example, an engineered substrate can be manufactured by forming a shear strength enhancement material at a front surface of a donor substrate and implanting ions a depth into the donor substrate through the shear strength enhancement material. The ion implantation can form a doped portion in the donor substrate that defines an epitaxial formation structure. The method can further include transferring the epitaxial formation structure from the donor substrate to a front surface of a handle substrate. The shear strength enhancement material can be positioned between the epitaxial formation structure and the front surface of the handle substrate and bridge defects in the front surface of the handle substrate.

Abstract: Engineered substrates having epitaxial formation structures with enhanced shear strength and associated systems and methods are disclosed herein. In several embodiments, for example, an engineered substrate can be manufactured by forming a shear strength enhancement material at a front surface of a donor substrate and implanting ions a depth into the donor substrate through the shear strength enhancement material. The ion implantation can form a doped portion in the donor substrate that defines an epitaxial formation structure. The method can further include transferring the epitaxial formation structure from the donor substrate to a front surface of a handle substrate. The shear strength enhancement material can be positioned between the epitaxial formation structure and the front surface of the handle substrate and bridge defects in the front surface of the handle substrate.

Abstract: The present invention relates to a process for the purification of 4-acetoxystyrene from a crude product mixture comprising 4-acetoxystyrene and typically 5 or more contaminants in substantial amount.The crude product mixture is purified by melt crystallization by cooling the mixture to a temperature ranging from about +8.degree. C. to about -50.degree. C., whereby at least a first portion of the mixture is crystallized; removing the liquid remaining from contact with the crystallized first portion of the mixture; and, subsequently slowly heating the crystallized first portion, while simultaneously removing liquid which forms due to the heating, whereby impurities contained in the liquid which forms are removed from the crystallized first portion.Surprisingly, despite the large number of contaminants present, and use of the process to purify crude product mixtures containing as little as 50% by weight 4-acetoxystyrene, purities as high as 99.