Patents by Inventor George E. Emond

George E. Emond has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chemical mechanical polishing compositions for CMP removal of iridium thin films
    Patent number: 6699402
    Abstract: A chemical mechanical polishing (CMP) slurry composition for removing noble metal material from a substrate having the noble metal material deposited thereon, for example, a semiconductor device structure including thereon a layer of the noble metal material, e.g., iridium, patterned for use as an electrode. Such polishing slurry composition contains abrasive polishing particles, a bromide compound, a bromate compound for providing free bromine as an oxidizing agent in the composition, and an organic acid for mediating decomposition of the bromate compound in the composition. The CMP slurry composition of the invention is particularly effective for planarization and/or removal of noble metal(s) from the substrate, in applications such as the fabrication of ferroelectric or high permittivity capacitor devices.
    Type: Grant
    Filed: December 28, 2001
    Date of Patent: March 2, 2004
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Michael W. Russell, Peter C. Van Buskirk, Jonathan J. Wolk, George E. Emond
  • Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same
    Patent number: 6395194
    Abstract: A method of removing noble metal material from a substrate having the noble metal material deposited thereon, such as a semiconductor device structure including thereon a layer of the noble metal material, e.g., iridium, patterned for use as an electrode. The substrate is subjected to chemical mechanical polishing with a chemical mechanical polishing composition containing abrasive polishing particles and a halide-based oxidizing agent. The CMP composition and method of the invention provide efficient planarization and noble metal material removal from the substrate, in applications such as the fabrication of ferroelectric or high permittivity capacitor devices.
    Type: Grant
    Filed: December 18, 1998
    Date of Patent: May 28, 2002
    Assignees: Intersurface Dynamics Inc., Advanced Technology Materials, Inc.
    Inventors: Michael W. Russell, Peter C. Van Buskirk, Jonathan J. Wolk, George E. Emond