Abstract: A system and method in which an overhead high voltage transmission line sensor system is able to measure one or more of temperature, current, and line sag for a conductor within a high voltage transmission line system. The sensor system may be able to clamp to a transmission conductor or splice, harvest power from the transmission line, and/or transmit data corresponding to measurements of current, temperature, and line sag.

Abstract: A low noise transistor IC or module comprises a plurality of conventional CMOS transistors which are laid out in parallel in such a way that the effective gate width of the combination of transistors is increased, yet the effective gate resistance and hence the noise figure (NF) of the circuit are reduced. A low noise amplifier incorporating such a module is also described.

Abstract: The invention is directed to a process for forming p.sup.+ and n.sup.+ gates on a single substrate. A polycrystalline silicon or amorphous silicon layer is formed on a substrate with n-type and p-type regions formed therein and with a layer of silicon dioxide formed thereover and the structure is subjected to a low temperature anneal. A layer of metal silicide is then formed over the structure and n-type and p-type dopants are implanted into the resulting structure. A nitrogen implant is performed after the n-type dopant is implanted into the structure. The nitrogen implant reduces the amount to which the p-type dopant diffuses through the silicide layer and into the n.sup.+ gates. A dielectric material is then formed over the structure and patterned, after which the structure is subjected to additional processing steps to form gate stacks over the n-regions and the p-regions of the substrate.

Abstract: Selective electroless plating of cobalt or nickel is utilized to form conductive plugs in high-aspect-ratio vias in VLSI devices. Particularly good results are obtained when an active or catalytic film is formed on the via bottoms to serve as a plating base.

Abstract: An improved X-ray source for a lithographic system comprises a double-angle conical target. The target is characterized by a small apparent source diameter and an efficient cooling system. Submicron resolution and high-power operation are thereby made feasible.