Abstract: A wafer handling fixture is used to transport a finished semiconductor wafer from one post-fabrication procedure to another (e.g., testing, inspection, cleaning, dicing, or shipping) in a manner that maintains the wafer in its “flattened” form and eliminates the possibility for a wafer to later spring back into a bowed form. The wafer handling fixture includes a surface stiction film to which the wafer will naturally adhere, and uses a wafer release mechanism included in a bottom support plate to permit for the “controlled” transfer of the wafer from the handling fixture to testing/inspection equipment.

Abstract: A jet pump comprising a pump housing containing a jet nozzle and a throat diffuser nozzle. The jet nozzle is comprised of a jet nozzle insert disposed in an axial inner bore of a precision jet cylindrical body and formed of an ultra-hard material. The throat diffuser nozzle is comprised of a throat diffuser nozzle insert disposed in an axial inner bore of a precision throat diffuser cylindrical body and also formed of an ultra-hard material. The jet nozzle and throat diffuser nozzle are disposed in an elongated cylindrical central bore portion of a tubular side wall of the pump housing. In order to achieve highest concentricity of the axial inner bores, the axial inner bore of the jet nozzle insert and the axial inner bore of the throat diffuser nozzle insert are formed after placement in the precision cylindrical bodies.

Abstract: A jet pump comprising a pump housing containing a jet nozzle and a throat diffuser nozzle. The jet nozzle is comprised of a jet nozzle insert disposed in an axial inner bore of a precision jet cylindrical body and formed of an ultra-hard material. The throat diffuser nozzle is comprised of a throat diffuser nozzle insert disposed in an axial inner bore of a precision throat diffuser cylindrical body and also formed of an ultra-hard material. The jet nozzle and throat diffuser nozzle are disposed in an elongated cylindrical central bore portion of a tubular side wall of the pump housing. In order to achieve highest concentricity of the axial inner bores, the axial inner bore of the jet nozzle insert and the axial inner bore of the throat diffuser nozzle insert are formed after placement in the precision cylindrical bodies.

Abstract: According to one embodiment of the invention, a method for predicting burn-in conditions includes identifying a baseline IDDQ, a baseline temperature, and a baseline IDDQ current density based on a plurality of existing burn-in data for one or more existing devices, determining a theoretical IDDQ current density for a device, determining a ratio of the theoretical IDDQ current density to the baseline IDDQ current density, determining a theoretical process metric for the device at the baseline temperature based on the ratio and the baseline IDDQ, measuring a process metric for an actual device, comparing the process metric for the actual device and the theoretical process metric for the device, and determining an actual burn-in temperature for the actual device based on the comparison.

Abstract: A test selector that multiplexes different test structures (202) to an adjacent probe pad (206) in dependence on the probe voltage. In addition, a scribeline test circuit is disclosed that includes a test selector circuit located in a single scribeline portion between two adjacent die locations. Multiple test structures and at least one probe pad also are located in the single scribeline portion. The test selector circuit makes an electrical connection from the probe pad to a selected one of the test structures depending upon a voltage applied at the probe pad.

Abstract: A robust reference sensing cell for FLASH memory is formed. The cell utilizes floating gate transistors with a drain transition region concentration gradient that is less than the drain transition region concentration gradient of the floating gate transistors used to form the FLASH memory cell array.

Abstract: A test selector that multiplexes different test structures (202) to an adjacent probe pad (206) in dependence on the probe voltage.

Abstract: A method for decreasing CHC degradation is provided. The method includes providing a semiconductor device (10) having at least one metal layer (28) completed. Then, a planarizing dielectric layer (30) is added to the semiconductor device (10). The semiconductor device (10) is heated in a hydrogen rich environment until hydrogen completely saturates the semiconductor device (10).

Abstract: A method for decreasing CHC degradation is provided. The method includes providing a semiconductor device (10) having at least one metal layer (28) completed. Then, a planarizing dielectric layer (30) is added to the semiconductor device (10). The semiconductor device (10) is heated in a hydrogen rich environment until hydrogen completely saturates the semiconductor device (10).

Abstract: A floating-gate memory which uses a skewed reference for sensing. The skewed reference preferably has a substantially different VT implant dose than the array cells, and can also have different sizing.

Abstract: An apparatus is provided for thermoforming a plurality of protrusions in a plastic sheet. The thermoforming apparatus comprises a pneumatic press having a pair of male and female die plates with respective projections and cavities. One of the die plates is heated. The other die plate is cooled. The cooled die plate is provided with vacuum to ensure that the thermoformed plastic sheet is held against the cooled die plate upon the opening of the press to, in turn, ensure the cooling of the plastic sheet prior to its removal.