Abstract: A semiconductor structure having a deep trench isolation structure for improved product yield is disclosed. The semiconductor structure includes a deep trench having a filler material therein. The deep trench is adjacent to field oxide regions in a semiconductor substrate. A high density plasma (HDP) oxide layer, substantially free of thermal oxide, is situated over the filler material in the deep trench. The HDP oxide layer has a substantially co-planar top surface with at least one of the field oxide regions. According to the present disclosure, formation of nodules in the deep trench is prevented.

Abstract: A semiconductor structure having a deep trench isolation structure for improved product yield is disclosed. The semiconductor structure includes a deep trench having a filler material therein. The deep trench is adjacent to field oxide regions in a semiconductor substrate. A high density plasma (HDP) oxide layer, substantially free of thermal oxide, is situated over the filler material in the deep trench. The HDP oxide layer has a substantially co-planar top surface with at least one of the field oxide regions. According to the present disclosure, formation of nodules in the deep trench is prevented.

Abstract: An electromagnetic actuator characterized by a pivotally connected stator and rotor (armature) forming a magnetic path linked by the coil and containing an air gap between the extremities of the stator and rotor. One such extremity is formed as a tapered arcuate tooth having inner and outer arcuate surfaces, and the other extremity is shaped to define a tapered arcuate mouth which fits complementally onto the tooth as the rotor pivots to a closed position. The coil mounted on the stator is formed with an arcuate passageway which receives the two extremities, coil thereby substantially surrounding the air gap while permitting the extremities to swing in a closing or opening sense relative to one another.