Abstract: A radiation detector is provided that provides fast sequential image acquisition. In one embodiment, the radiation detector a diode capacitor that is charged in response to a radiation exposure event. The charge stored in the diode capacitor is transferred to a separate storage capacitor, allowing a new charge to be generated and stored at the diode capacitor.

Abstract: An apparatus for reducing photodiode thermal gain coefficient includes a bulk semiconductor material having a light-illumination side. The bulk semiconductor material includes a minority charge carrier diffusion length property configured to substantially match a predetermined hole diffusion length value and a thickness configured to substantially match a predetermined photodiode layer thickness. The apparatus also includes a dead layer coupled to the light-illumination side of the bulk semiconductor material, the dead layer having a thickness configured to substantially match a predetermined thickness value and wherein an absolute value of a thermal coefficient of gain due to the minority carrier diffusion length property of the bulk semiconductor material is configured to substantially match an absolute value of a thermal coefficient of gain due to the thickness of the dead layer.

Abstract: An apparatus for reducing photodiode thermal gain coefficient includes a bulk semiconductor material having a light-illumination side. The bulk semiconductor material includes a minority charge carrier diffusion length property configured to substantially match a predetermined hole diffusion length value and a thickness configured to substantially match a predetermined photodiode layer thickness. The apparatus also includes a dead layer coupled to the light-illumination side of the bulk semiconductor material, the dead layer having a thickness configured to substantially match a predetermined thickness value and wherein an absolute value of a thermal coefficient of gain due to the minority carrier diffusion length property of the bulk semiconductor material is configured to substantially match an absolute value of a thermal coefficient of gain due to the thickness of the dead layer.

Abstract: A radiation detector is provided that provides fast sequential image acquisition. In one embodiment, the radiation detector a diode capacitor that is charged in response to a radiation exposure event. The charge stored in the diode capacitor is transferred to a separate storage capacitor, allowing a new charge to be generated and stored at the diode capacitor.

Abstract: A sensor array includes a substrate including a front side and a back side, a plurality of transducers fabricated on the front side of the substrate, a plurality of input/output connections positioned on the back side of the substrate, the input/output connections electrically coupled to the transducers, at least one electronic device, and an interposer positioned between the substrate and the electronic device, the interposer including a multilayer interconnect system configured to electrically connect the input/output connections to the electronic device.

Abstract: A method for fabricating an imaging array includes forming a first dielectric barrier, forming a light block element on the first dielectric barrier, wherein the light block element is at least coextensive with a gate, and forming a second dielectric barrier on the first dielectric barrier and the light block element such that the light block element is encapsulated between the first dielectric barrier and the second dielectric barrier.

Abstract: Storage capacitor design for a solid state imager. The imager includes several pixels disposed on a substrate in an imaging array pattern. Each pixel includes a photosensor coupled to a thin film switching transistor. Several scan lines are disposed at a first level with respect to the substrate along a first axis and several data lines are disposed at a second level along a second axis of the imaging array. Several data lines disposed at a second level with respect to the substrate along a second axis of the imaging array pattern. Each pixel comprises a storage capacitor coupled parallel to the photosensor, the storage capacitor comprising a storage capacitor electrode and a capacitor common electrode.

Abstract: A solid-state imager with back-side irradiation. The present invention provides a solid-state imager that includes a substantially radiation transparent substrate adapted to receive incident radiation. The radiation travels through the substrate and a pixelated array of photosensitive elements to a scintillator material, which absorbs the radiation. The pixelated array of photosensitive elements receives light photons and measures the amount of light generated by radiation interactions with the scintillator material. With this imager, there is less spreading and blurring and thus a better quality image. In another embodiment, there is a substantially transparent material disposed between the pixelated array of photosensitive elements and the scintillator material. The substantially transparent material absorbs and substantially blocks electrons from entering the active regions of the pixelated array of photosensitive elements.

Abstract: A light detector includes a plurality of light receiving sections which are formed in a substrate and generate signal charges corresponding to the amount of incident light, and a plurality of wirings which are formed on the substrate and fetch the signal charges from the light receiving sections, wherein at least some of the plurality of wirings are disposed so as to overlap with other light receiving sections different from the light receiving sections connected to fetch the signal charges.

Abstract: A method for monitoring the quality of a manufacturing process for making detector panels that have a plurality of pixels in a two-dimensional array includes, in each detector panel, manufacturing a set of baseline pixels and a set of test pixels. Each test pixel has an electrical component having a geometric dimension varied by an amount sufficient to introduce a measurable variation in a test that measures parameters of pixels that are dependent upon the varied dimension. The method further includes performing the test on the set of baseline pixels and the set of varied pixels, analyzing the results of the test, and adjusting parameters of the manufacturing process in accordance with the analysis.

Abstract: Storage capacitor array for a solid state radiation imager. The imager includes several pixels disposed on a substrate in an imaging array pattern. Each pixel includes a photosensor coupled to a thin film switching transistor. Several scan lines are disposed at a first level with respect to the substrate along a first axis and several data lines are disposed at a second level along a second axis of the imaging array. Capacitors are disposed on the substrate, wherein each capacitor has a first electrode coupled to a corresponding photosensor and a corresponding thin film transistor and a second electrode coupled to a capacitor linear electrode.

Abstract: A method for fabricating an imaging array includes forming a first dielectric barrier, forming a light block element on the first dielectric barrier, wherein the light block element is at least coextensive with a gate, and forming a second dielectric barrier on the first dielectric barrier and the light block element such that the light block element is encapsulated between the first dielectric barrier and the second dielectric barrier.

Abstract: A sensor array includes a substrate including a front side and a back side, a plurality of transducers fabricated on the front side of the substrate, a plurality of input/output connections positioned on the back side of the substrate, the input/output connections electrically coupled to the transducers, at least one electronic device, and an interposer positioned between the substrate and the electronic device, the interposer including a multilayer interconnect system configured to electrically connect the input/output connections to the electronic device.

Abstract: A radiation detector includes a top gate thin film transistor (TFT) including a source electrode, a drain electrode, a gate electrode, a first dielectric layer, and a second dielectric layer, wherein the second dielectric layer is extending over a surface of the first dielectric layer. The radiation detector also includes a capacitor that includes at least two electrodes and a dielectric layer. The capacitor dielectric layer is formed unitarily with the TFT second dielectric layer.

Abstract: A solid state imager is provided that comprises an imaging array of gated photodiodes. The imager comprises a plurality of photosensor pixels arranged in a pixel array, and each of the photosensor pixels includes a photodiode having a sidewall, the sidewall having a gate dielectric layer disposed thereon, and a field plate disposed around the photodiode body. The field plate comprises amorphous silicon disposed on the gate dielectric layer and extends substantially completely around the sidewall of said photodiode. The field plate is electrically coupled to the common electrode of the imaging array so that the field plate creates an electric field around the photodiode body in correspondence with the potential of said common electrode. A method of fabricating the gated photodiode array is also provided.

Abstract: A photodiode detector array includes a layer of intrinsic semiconductor material having a first doped layer on a first surface of a first conductivity type and an array of photodiodes having respective doped regions on a second surface of an opposite conductivity type. Electrical contacts on the second surface respectively contact the doped regions and convey electrical signal therefrom. Conductors extend from the electrical contacts to convey the electrical signals to output terminals of the array. A scintillator is optically coupled to the layer of intrinsic semiconductor material at the first surface thereof and can be pixelated, with individual scintillator elements aligned with and corresponding to the doped regions of the photodiode. The photodiode detector array can be mounted to a rigid printed wiring board or to a flat bottom wall surface of the scintillator.

Abstract: In an imager having an array of light-sensitive elements and employing striped common electrodes, exposed edges of preimidized polyimide layers above the light-sensitive imaging elements are sealed with the material of the common electrode (e.g., indium tin oxide). Similarly, exposed preimidized polyimide edges in electrical contacts for the array and bridge members electrically coupling adjacent light-sensitive imaging elements are also sealed with the material of the common electrode.

Abstract: A radiation detector includes a top gate thin film transistor (TFT) including a source electrode, a drain electrode, a gate electrode, a first dielectric layer, and a second dielectric layer, wherein the second dielectric layer is extending over a surface of the first dielectric layer. The radiation detector also includes a capacitor that includes at least two electrodes and a dielectric layer. The capacitor dielectric layer is formed unitarily with the TFT second dielectric layer.

Abstract: In one aspect of the invention a method for processing a fluoroscopic image is provided. The method includes scanning an object with an imaging system including at least one radiation source and at least one detector array, acquiring a plurality of dark images to generate a baseline image, acquiring a plurality of lag images subsequent to the baseline image, determining a plurality of parameters of a power law using at least one lag image and at least one baseline image, and performing a log—log extrapolation of the power law including the determined parameters.

Abstract: A photodiode detector array includes a layer of intrinsic semiconductor material having a first doped layer on a first surface of a first conductivity type and an array of photodiodes having respective doped regions on a second surface of an opposite conductivity type. Electrical contacts on the second surface respectively contact the doped regions and convey electrical signal therefrom. Conductors extend from the electrical contacts to convey the electrical signals to output terminals of the array. A scintillator is optically coupled to the layer of intrinsic semiconductor material at the first surface thereof and can be pixelated, with individual scintillator elements aligned with and corresponding to the doped regions of the photodiode. The photodiode detector array can be mounted to a rigid printed wiring board or to a flat bottom wall surface of the scintillator.