Abstract: A multi-cell inductive wireless power transfer system includes multiple transmitting elements. Each transmitting element includes one or more transmitting windings and one or more transmitting magnetic cores. The multi-cell inductive wireless power transfer system also includes multiple receiving elements. The transmitting elements are separated from the receiving elements by an air gap. Each receiving element includes one or more receiving windings and one or more receiving magnetic cores.

Abstract: A semiconductor device having improved heat dissipating capability is provided. The preferred device in accordance with the invention includes an electronic device (12) formed in a surface (14) of a semiconductor die (10). The surface (14) is covered with a layer of diamond (20). Openings (24) are provided in the diamond layer (20) for access to the electronic device. A metallized pad (26) is provided on top of the diamond layer (20). Additionally, solder bumps (28) pass through the openings (24) in the diamond layer (20). A die attach substrate (32) is attached to the metallized pad (26) and the bumps (28). Heat is dissipated uniformly across the diamond layer (20) and is drawn off the device through the metallized pad (26). Electrical connections are made to the device via the solder bumps (28).

Abstract: An electronic circuit assembly with improved heatsinking is provided. The assembly includes a component carrying board (56) which has an opening (62) through it. The opening is sized to receive a heat generating electronic component (64). A diamond layer (50) is attached as a heat sink to the bottom (58) of the component carrying board. The heat generating component (64) is attached directly to the diamond layer (50), through the opening (62) in the component carrying board (56). The diamond layer provides electrical insulation as well as superior heat dissipation.

Abstract: A method for making a substrate structure with improved heat dissipation is provided. A semiconductor wafer (14) is provided. A diamond layer (12) is formed on the back (20) of the wafer (14). The diamond layer (12) provides structural support and heat dissipation. In certain embodiments, the diamond layer may be an amorphous diamond substrate ( 12 ) bonded to the semiconductor wafer (14), In certain other embodiments the diamond layer (12) may be a thin film layer (12) deposited on the back of the semiconductor wafer (14). The semiconductor wafer (14) is thinned to a minimum thickness necessary for forming an electronic device in a surface (22) of the wafer (14).

Abstract: A bonding pad is described having a reduced surface area while maintaining adequate wire bonding surface. The bonding pad comprises: a test pad for contacting with a test probe; a plurality of radially extending conductive fingers; and an alignment key generally in the form of a circle disposed about a portion of the fingers.

Abstract: A fluid pump having a pump housing, and an impeller in the housing and coupled to the drive shaft of a drive motor. An improved main seal is provided in the housing to seal the hole through which the drive shaft extends. The seal includes a carbon seal member having a flat end face in sliding relationship to the flat end face of a ceramic seal rotatable with the drive shaft and the impeller. The seal further includes a pre-loaded element which forces the two seal faces together. An improved mounting bracket is provided to mount the drive motor and the pump housing on a fixed support. The mounting bracket includes a central mounting plate and a pair of inclined, side wings which extend from the pump housing toward the drive motor so as to eliminate the need for a second bracket on the opposite side of the motor.

Abstract: A skim net assembly having an open frame with a number of sides, and a web coupled to the frame at one of the sides. The net is secured in some suitable manner to the frame in alignment with the central opening through the frame so as to trap and collect debris as the skim net assembly moves in the water of debris-containing water in a forward or lateral direction. The cross section of three sides of the frame is blade-like in configuration; thus, the three sides permit a shovel-like action when cleaning a swimming pool which allows debris to be more effectively forced into the net when the assembly is being pushed over the bottom or moved laterally over the bottom surface of a swimming pool. A pole is coupled to the frame in a manner such that the pole is adjustably mounted on the frame for angular movement into any one of a number of operative positions.

Abstract: A metal-to-metal seal for a rotary cone rock bit consists of pre-lapped metal sealing surfaces formed on opposing seal rings prior to assembly of the seal rings into seal cavities formed between the rotary cones and their respective journal bearings. A first seal ring is fabricated from a softer metallic material than its opposing second metallic ring and the second ring has more seal surface area than the first ring to accommodate for cone wobble or eccentricities that may occur during operation of the bit in a borehole.

Abstract: A metal-to-metal Belleville seal for a rotary cone rock bit consists of pre-lapped metal sealing surfaces formed on opposing seal rings prior to assembly of the seal rings into seal cavities formed between the rotary cones and their respective journal bearings. A first seal ring is fabricated from a softer metallic material than its opposing second metallic ring and the second ring has more seal surface area than the first ring to accommodate for cone wobble or eccentricities that may occur during operation of the bit in a borehole.

Abstract: A welding fixture for metallurgically bonding a belleville seal to a journal bearing of a rotary cone rock bit segment is disclosed. The fixture includes a rotary table and structure to rotatively secure the journal bearing of the rock bit segment during a welding process wherein a metallurgical bond takes place through part or all of the 360.degree. joint between the seal and the journal bearing.

Abstract: Semiconductor devices with resistor regions, capable of operating at higher temperatures, and having improved bond pull strength are obtained by using a single layer (e.g. Ni--Cr) to act as a combined resistive layer and barrier layer. When placed in the contact windows between the semiconductor (e.g. Si) and the interconnect metallization, (e.g. Al) the Ni--Cr layer acts as a diffusion barrier to prevent interdiffusion of silicon and aluminum and contact alloying punch-through. When placed elsewhere on the device the Ni--Cr layer also serves as thin film resistor material. Wire bond pull strength is improved by placing an adhesion layer (e.g. polysilicon) beneath the portion of the resistive barrier layer underlying the bonding pads. The polysilicon layer rests on the insulator (e.g. SiO.sub.2) covering the semiconductor substrate.

Abstract: An improved nozzle for use with a tub, such as a redwood tub, having a side wall provided with an opening therethrough. The nozzle comprises a nozzle body receivable in the wall opening and having a main water-receiving bore therethrough. A flow control valve is in the main bore and is manually adjustable at the outlet end of the main bore. The nozzle body has a secondary bore provided with a one-way check valve therein. The secondary bore communicates with the main bore to allow air to pass into the water by suction to aerate the water as it flows into the tub. A flow regulator member is adjustably mounted on the nozzle body near the outlet end of the main bore for controlling the flow of air into the water flow. Several embodiments of the check valve are disclosed.

Abstract: Semiconductor devices with resistor regions, capable of operating at higher temperatures, and having improved bond pull strength are obtained by using a single layer (e.g. Ni--Cr) to act as a combined resistive layer and barrier layer. When placed in the contact windows between the semiconductor (e.g. Si) and the interconnect metallization, (e.g. Al) and Ni--Cr layer acts as a diffusion barrier to prevent interdiffusion of silicon and aluminum and contact alloying punch-through. When placed elsewhere on the device the Ni--Cr layer also serves as thin film resistor material. Wire bond pull strength is improved by placing an adhesion layer (e.g. polysilicon) beneath the portion of the resistive barrier layer underlying the bonding pads. The polysilicon layer rests on the insulator (e.g. SiO.sub.2) covering the semiconductor substrate.