Abstract: A method for reaction bonding surfaces at low temperatures in which polished and cleaned surfaces are bombarded with a mixture of oxygen and fluorine ions to produce activated surfaces. The activated surfaces are then cleaned to remove particulates, then contacted at room temperature to affect a reaction bond therebetween. The bond energy of the reaction bonded surfaces increase with time at room temperature. The rate at which the bond energy of the reaction bonded surfaces increases may be enhanced by moderate heating at a low temperature below a temperature which would be detrimental to any part of the reaction bonded structure. A satisfactory bond energy for silicon wafers can be achieved in four hours at room temperature and in less than 10 minutes at 50.degree. C.

Abstract: A method for enhancing the bond energy of reaction bonded surfaces in which polished (10) and cleaned surfaces (12) are bombarded with oxygen ions, fluorine ions or a mixture of oxygen and fluorine ions (14) to activate these surfaces. The activated surfaces are then cleaned to remove particulates (15) and then contacted (16) at room temperature to make a reaction bond therebetween. The reaction bond may be heated (18) to further increase the bond energy. The bond energy of oxygen ion bombarded surfaces can have two times the bond energy of surfaces subject to a conventional bonding process. The addition of fluorine ions to the oxygen ions used to activate the surfaces can further increase the bond energy between the contacted surfaces by at least another factor of 2.