Abstract: The invention teaches electrospun light-emitting fibers made from ionic transition metal complexes (“iTMCs”) such as [Ru(bpy)3]2+(PF6?)2]/PEO mixtures with dimensions in the 10.0 nm to 5.0 micron range and capable of highly localized light emission at low operating voltages such as 3-4 V with turn-on voltages approaching the band-gap limit of the organic semiconductor that may be used as point source light emitters on a chip.

Abstract: The invention teaches electrospun light-emitting fibers made from ionic transition metal complexes (‘iTMCs”) such as [Ru(bpy)3]2+(PF6?)2]/PEO mixtures with dimensions in the 10.0 nm to 5.0 micron range and capable of highly localized light emission at low operating voltages such as 3-4 V with turn-on voltages approaching the band-gap limit of the organic semiconductor that may be used as point source light emitters on a chip.

Abstract: The invention teaches electrospun light-emitting fibers made from ionic transition metal complexes (“iTMCs”) such as [Ru(bpy)3]2+(PF6.)2]/PEO mixtures with dimensions in the 10.0 nm to 5.0 micron range and capable of highly localized light emission at low operating voltages such as 3-4 V with turn-on voltages approaching the band-gap limit of the organic semiconductor that may be used as point source light emitters on a chip.

Abstract: A cascaded light emitting device. The cascaded light emitting device includes: a base electrode formed of a base electrode material and electrically coupled to a base voltage lead; a top electrode layer formed of a top electrode material and electrically coupled to a top voltage lead; a number of electroluminescent layers arranged between and electrically coupled to the base electrode and top electrode layer; and at least one middle electrode layer formed of a middle electrode material. Each of the middle electrodes is coupled between two juxtaposed electroluminescent layers. The electroluminescent layers include a mixed conductor that luminesces with a peak wavelength.

Abstract: A cascaded light emitting device. The cascaded light emitting device includes: a base electrode formed of a base electrode material and electrically coupled to a base voltage lead; a top electrode layer formed of a top electrode material and electrically coupled to a top voltage lead; a number of electroluminescent layers arranged between and electrically coupled to the base electrode and top electrode layer; and at least one middle electrode layer formed of a middle electrode material. Each of the middle electrodes is coupled between two juxtaposed electroluminescent layers. The electroluminescent layers include a mixed conductor that luminesces with a peak wavelength.

Abstract: A laterally configured electrooptical device including: a substrate having a surface; a first semiconductor layer of a first type semiconductor material; a second semiconductor layer formed of a second type semiconductor material different from the first type semiconductor material; a first electrode; and a second electrode. The lower surface of the first semiconductor layer is coupled to a section of the surface of the substrate. The lower surface of the second semiconductor layer is coupled to the upper surface of the first semiconductor layer to form a junction. The first electrode is directly electrically coupled to one side of the first semiconductor layer and the second electrode is directly electrically coupled to an opposite side of the second semiconductor layer. These electrodes are configured such that the lower surface of the first semiconductor layer and/or the upper surface of the second semiconductor layer are substantially unoccluded by them.

Abstract: The invention teaches electrospun light-emitting fibers made from ionic transition metal complexes (“iTMCs”) such as [Ru(bpy)3]2+(PF6.)2]/PEO mixtures with dimensions in the 10.0 nm to 5.0 micron range and capable of highly localized light emission at low operating voltages such as 3-4 V with turn-on voltages approaching the band-gap limit of the organic semiconductor that may be used as point source light emitters on a chip.

Abstract: A semiconductor device, including: a semiconductor material and an electrode structure electrically coupled to the semiconductor material. The electrode structure includes: a first portion formed of a first conductive material and a second portion formed of a second conductive material. Both the first portion and the second portion of the electrode structure are in direct contact with the semiconductor material. The first conductive material has a first work function and the second conductive material has a second work function that is different from the first work function, so that the second portion of the electrode structure forms a junction with the first portion. The first portion and the second portion of the electrode structure are arranged such that the fringe field from the edge of this junction between the first portion and the second portion extends into the semiconductor material.

Abstract: A laterally configured electrooptical device including: a substrate having a surface; a first semiconductor layer of a first type semiconductor material; a second semiconductor layer formed of a second type semiconductor material different from the first type semiconductor material; a first electrode; and a second electrode. The lower surface of the first semiconductor layer is coupled to a section of the surface of the substrate. The lower surface of the second semiconductor layer is coupled to the upper surface of the first semiconductor layer to form a junction. The first electrode is directly electrically coupled to one side of the first semiconductor layer and the second electrode is directly electrically coupled to an opposite side of the second semiconductor layer. These electrodes are configured such that the lower surface of the first semiconductor layer and/or the upper surface of the second semiconductor layer are substantially unoccluded by them.