Patents by Inventor George G. Totir
George G. Totir has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11024512Abstract: Enhanced compositions and methods are provided for selectively etching silicon wafers, which is particularly useful in the context of silicon wafer manufacturing and processing applications. Optionally, a formulation is provided which selectively etches silicon dioxide in preference to aluminum oxide. Optionally, a formulation and method are provided that is substantially non-aqueous.Type: GrantFiled: March 6, 2020Date of Patent: June 1, 2021Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ali Afzali-Ardakani, Benjamin Wymore, David L. Rath, George G. Totir
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Patent number: 10276384Abstract: A gas is ionized into a plasma. A compound of a dopant is mixed into the plasma, forming a mixed plasma. Using a semiconductor device fabrication system, a layer of III-V material is exposed to the mixed plasma to dope the layer with the dopant up to a depth in the layer, forming a shallow doped portion of the layer. The depth of the dopant is controlled by a second layer of the dopant formed at the shallow doped portion of the layer. The second layer is exposed to a solution, where the solution is prepared to erode the dopant in the second layer at a first rate. After an elapsed period, the solution is removed from the second layer, wherein the elapsed period is insufficient to erode a total depth of the layer and the shallow doped portion by more than a tolerance erosion amount.Type: GrantFiled: January 30, 2017Date of Patent: April 30, 2019Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Robert L. Bruce, Kevin K. Chan, Sebastian U. Engelmann, Dario L. Goldfarb, Marinus Hopstaken, Mahmoud Khojasteh, George G. Totir, Hongwen Yan, Masahiro Yamazaki
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Patent number: 10167443Abstract: A method for cleaning etch residues that may include treating an etched surface with an aqueous lanthanoid solution, wherein the aqueous lanthanoid solution removes an etch residue that includes a majority of hydrocarbons and at least one element selected from the group consisting of carbon, oxygen, fluorine, nitrogen and silicon. In one example, the aqueous solution may be cerium ammonium nitrate (Ce(NH4)(NO3)),(CAN).Type: GrantFiled: October 26, 2016Date of Patent: January 1, 2019Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, ZEON CORPORATIONInventors: Robert L. Bruce, Sebastian U. Engelmann, Eric A. Joseph, Mahmoud Khojasteh, Masahiro Nakamura, Satyavolu S. Papa Rao, Bang N. To, George G. Totir, Yu Zhu
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Publication number: 20180218908Abstract: A gas is ionized into a plasma. A compound of a dopant is mixed into the plasma, forming a mixed plasma. Using a semiconductor device fabrication system, a layer of III-V material is exposed to the mixed plasma to dope the layer with the dopant up to a depth in the layer, forming a shallow doped portion of the layer. The depth of the dopant is controlled by a second layer of the dopant formed at the shallow doped portion of the layer. The second layer is exposed to a solution, where the solution is prepared to erode the dopant in the second layer at a first rate. After an elapsed period, the solution is removed from the second layer, wherein the elapsed period is insufficient to erode a total depth of the layer and the shallow doped portion by more than a tolerance erosion amount.Type: ApplicationFiled: February 13, 2018Publication date: August 2, 2018Applicants: International Business Machines Corporation, Tokyo Electron LimitedInventors: Robert L. Bruce, Kevin K. Chan, Sebastian U. Engelmann, Dario L. Goldfarb, Marinus Hopstaken, Mahmoud Khojasteh, George G. Totir, Hongwen Yan, Masahiro Yamazaki
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Publication number: 20180218907Abstract: A gas is ionized into a plasma. A compound of a dopant is mixed into the plasma, forming a mixed plasma. Using a semiconductor device fabrication system, a layer of III-V material is exposed to the mixed plasma to dope the layer with the dopant up to a depth in the layer, forming a shallow doped portion of the layer. The depth of the dopant is controlled by a second layer of the dopant formed at the shallow doped portion of the layer. The second layer is exposed to a solution, where the solution is prepared to erode the dopant in the second layer at a first rate. After an elapsed period, the solution is removed from the second layer, wherein the elapsed period is insufficient to erode a total depth of the layer and the shallow doped portion by more than a tolerance erosion amount.Type: ApplicationFiled: January 30, 2017Publication date: August 2, 2018Applicants: International Business Machines Corporation, Tokyo Electron LimitedInventors: Robert L. Bruce, Kevin K Chan, Sebastian U. Engelmann, Dario L. Goldfarb, Marinus Hopstaken, Mahmoud Khojasteh, George G. Totir, Hongwen Yan, Masahiro Yamazaki
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Publication number: 20180218909Abstract: A gas is ionized into a plasma. A compound of a dopant is mixed into the plasma, forming a mixed plasma. Using a semiconductor device fabrication system, a layer of III-V material is exposed to the mixed plasma to dope the layer with the dopant up to a depth in the layer, forming a shallow doped portion of the layer. The depth of the dopant is controlled by a second layer of the dopant formed at the shallow doped portion of the layer. The second layer is exposed to a solution, where the solution is prepared to erode the dopant in the second layer at a first rate. After an elapsed period, the solution is removed from the second layer, wherein the elapsed period is insufficient to erode a total depth of the layer and the shallow doped portion by more than a tolerance erosion amount.Type: ApplicationFiled: February 13, 2018Publication date: August 2, 2018Applicants: International Business Machines Corporation, Tokyo Electron LimitedInventors: Robert L. Bruce, Kevin K. Chan, Sebastian U. Engelmann, Dario L. Goldfarb, Marinus Hopstaken, Mahmoud Khojasteh, George G. Totir, Hongwen Yan, Masahiro Yamazaki
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Publication number: 20170044470Abstract: A method for cleaning etch residues that may include treating an etched surface with an aqueous lanthanoid solution, wherein the aqueous lanthanoid solution removes an etch residue that includes a majority of hydrocarbons and at least one element selected from the group consisting of carbon, oxygen, fluorine, nitrogen and silicon. In one example, the aqueous solution may be cerium ammonium nitrate (Ce(NH4)(NO3)),(CAN).Type: ApplicationFiled: October 26, 2016Publication date: February 16, 2017Inventors: Robert L. Bruce, Sebastian U. Engelmann, Eric A. Joseph, Mahmoud Khojasteh, Masahiro Nakamura, Satyavolu S. Papa Rao, Bang N. To, George G. Totir, Yu Zhu
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Patent number: 9536731Abstract: A method for cleaning etch residues that may include treating an etched surface with an aqueous lanthanoid solution, wherein the aqueous lanthanoid solution removes an etch residue that includes a majority of hydrocarbons and at least one element selected from the group consisting of carbon, oxygen, fluorine, nitrogen and silicon. In one example, the aqueous solution may be cerium ammonium nitrate (Ce(NH4)(NO3)),(CAN).Type: GrantFiled: October 24, 2014Date of Patent: January 3, 2017Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, ZEON CORPORATIONInventors: Robert L. Bruce, Sebastian U. Engelmann, Eric A. Joseph, Mahmoud Khojasteh, Masahiro Nakamura, Satyavolu S. Papa Rao, Bang N. To, George G. Totir, Yu Zhu
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Publication number: 20150118839Abstract: A method for cleaning etch residues that may include treating an etched surface with an aqueous lanthanoid solution, wherein the aqueous lanthanoid solution removes an etch residue that includes a majority of hydrocarbons and at least one element selected from the group consisting of carbon, oxygen, fluorine, nitrogen and silicon. In one example, the aqueous solution may be cerium ammonium nitrate (Ce(NH4)(NO3)),(CAN).Type: ApplicationFiled: October 24, 2014Publication date: April 30, 2015Inventors: Robert L. Bruce, Sebastian U. Engelmann, Eric A. Joseph, Mahmoud Khojasteh, Masahiro Nakamura, Satyavolu S. Papa Rao, Bang N. To, George G. Totir, Yu Zhu
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Patent number: 8865017Abstract: A method of texturing a surface of a crystalline silicon substrate is provided. The method includes immersing a crystalline silicon substrate into an aqueous alkaline etchant solution to form a pyramid shaped textured surface, with (111) faces exposed, on the crystalline silicon substrate. The aqueous alkaline etchant solution employed in the method of the present disclosure includes an alkaline component and a nanoparticle slurry component. Specifically, the aqueous alkaline etchant solution of the present disclosure includes 0.5 weight percent to 5 weight percent of an alkaline component and from 0.1 weight percent to 5 weight percent of a nanoparticle slurry on a dry basis.Type: GrantFiled: October 22, 2013Date of Patent: October 21, 2014Assignee: International Business Machines CorporationInventors: Mahadevaiyer Krishnan, Jun Liu, Satyavolu S. Papa Rao, George G. Totir
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Publication number: 20140051201Abstract: A method of texturing a surface of a crystalline silicon substrate is provided. The method includes immersing a crystalline silicon substrate into an aqueous alkaline etchant solution to form a pyramid shaped textured surface, with (111) faces exposed, on the crystalline silicon substrate. The aqueous alkaline etchant solution employed in the method of the present disclosure includes an alkaline component and a nanoparticle slurry component. Specifically, the aqueous alkaline etchant solution of the present disclosure includes 0.5 weight percent to 5 weight percent of an alkaline component and from 0.1 weight percent to 5 weight percent of a nanoparticle slurry on a dry basis.Type: ApplicationFiled: October 22, 2013Publication date: February 20, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Mahadevaiyer Krishnan, Jun Liu, Satyavolu S. Papa Rao, George G. Totir
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Publication number: 20140042360Abstract: A method of texturing a surface of a crystalline silicon substrate is provided. The method includes immersing a crystalline silicon substrate into an aqueous alkaline etchant solution to form a pyramid shaped textured surface, with (111) faces exposed, on the crystalline silicon substrate. The aqueous alkaline etchant solution employed in the method of the present disclosure includes an alkaline component and a nanoparticle slurry component. Specifically, the aqueous alkaline etchant solution of the present disclosure includes 0.5 weight percent to 5 weight percent of an alkaline component and from 0.1 weight percent to 5 weight percent of a nanoparticle slurry on a dry basis.Type: ApplicationFiled: October 22, 2013Publication date: February 13, 2014Applicant: International Business Machines CorporationInventors: Mahadevaiyer Krishnan, Jun Liu, Satyavolu S. Papa Rao, George G. Totir
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Patent number: 8637405Abstract: A method of texturing a surface of a crystalline silicon substrate is provided. The method includes immersing a crystalline silicon substrate into an aqueous alkaline etchant solution to form a pyramid shaped textured surface, with (111) faces exposed, on the crystalline silicon substrate. The aqueous alkaline etchant solution employed in the method of the present disclosure includes an alkaline component and a nanoparticle slurry component. Specifically, the aqueous alkaline etchant solution of the present disclosure includes 0.5 weight percent to 5 weight percent of an alkaline component and from 0.1 weight percent to 5 weight percent of a nanoparticle slurry on a dry basis.Type: GrantFiled: June 21, 2011Date of Patent: January 28, 2014Assignee: International Business Machines CorporationInventors: Mahadevaiyer Krishnan, Jun Liu, Satyavolu S. Papa Rao, George G. Totir
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Patent number: 8618036Abstract: An aqueous solution of a cerium (IV) complex or salt having an extended lifetime is provided. In one embodiment, the extended lifetime is achieved by adding at least one booster additive to an aqueous solution of the cerium (IV) complex or salt. In another embodiment, the extended lifetime is achieved by providing an aqueous solution of a cerium (IV) complex or salt and a cerium (III) complex or salt. The cerium (III) complex or salt can be added or it can be generated in-situ by introducing a reducing agent into the aqueous solution of the cerium (IV) complex or salt. The aqueous solution can be used to remove a mask material, especially an ion implanted and patterned photoresist, from a surface of a semiconductor substrate.Type: GrantFiled: November 14, 2011Date of Patent: December 31, 2013Assignees: International Business Machines Corporation, Advanced Technology Materials, Inc.Inventors: Ali Afzali-Ardakani, John A. Fitzsimmons, Nicholas C. M. Fuller, Mahmoud Khojasteh, Jennifer V. Muncy, George G. Totir, Karl E. Boggs, Emanuel I. Cooper, Michael W. Owens, James L. Simpson
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Patent number: 8563408Abstract: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.Type: GrantFiled: June 28, 2012Date of Patent: October 22, 2013Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Mahmoud Khojasteh, Ronald W. Nunes, George G. Totir
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Publication number: 20130143397Abstract: An organic planarizing layer (OPL) is formed atop a semiconductor substrate which includes a plurality of gate lines thereon. Each gate line includes at least a high k gate dielectric and a metal gate. A patterned photoresist having at least one pattern formed therein is then positioned atop the OPL. The at least one pattern in the photoresist is perpendicular to each of the gate lines. The pattern is then transferred by etching into the OPL and portions of each of the underlying gate lines to provide a plurality of gate stacks each including at least a high k gate dielectric portion and a metal gate portion. The patterned photoresist and the remaining OPL layer are then removed utilizing a sequence of steps including first contacting with a first acid, second contacting with an aqueous cerium-containing solution, and third contacting with a second acid.Type: ApplicationFiled: September 13, 2012Publication date: June 6, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Nicholas C.M. Fuller, Pratik P. Joshi, Mahmoud Khojasteh, Rajiv M. Ranade, George G. Totir
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Patent number: 8455420Abstract: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.Type: GrantFiled: June 28, 2012Date of Patent: June 4, 2013Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Mahmoud Khojasteh, Ronald W. Nunes, George G. Totir
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Patent number: 8455366Abstract: An organic planarizing layer (OPL) is formed atop a semiconductor substrate which includes a plurality of gate lines thereon. Each gate line includes at least a high k gate dielectric and a metal gate. A patterned photoresist having at least one pattern formed therein is then positioned atop the OPL. The at least one pattern in the photoresist is perpendicular to each of the gate lines. The pattern is then transferred by etching into the OPL and portions of each of the underlying gate lines to provide a plurality of gate stacks each including at least a high k gate dielectric portion and a metal gate portion. The patterned photoresist and the remaining OPL layer are then removed utilizing a sequence of steps including first contacting with a first acid, second contacting with an aqueous cerium-containing solution, and third contacting with a second acid.Type: GrantFiled: September 13, 2012Date of Patent: June 4, 2013Assignee: International Business Machines CorporationInventors: Nicholas C. M. Fuller, Pratik P. Joshi, Mahmoud Khojasteh, Rajiv M. Ranade, George G. Totir
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Publication number: 20130123159Abstract: An aqueous solution of a cerium (IV) complex or salt having an extended lifetime is provided. In one embodiment, the extended lifetime is achieved by adding at least one booster additive to an aqueous solution of the cerium (IV) complex or salt. In another embodiment, the extended lifetime is achieved by providing an aqueous solution of a cerium (IV) complex or salt and a cerium (III) complex or salt. The cerium (III) complex or salt can be added or it can be generated in-situ by introducing a reducing agent into the aqueous solution of the cerium (IV) complex or salt. The aqueous solution can be used to remove a mask material, especially an ion implanted and patterned photoresist, from a surface of a semiconductor substrate.Type: ApplicationFiled: November 14, 2011Publication date: May 16, 2013Applicants: ADVANCED TECHNOLOGY MATERIALS, INC., INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ali Afzali-Ardakani, John A. Fitzsimmons, Nicholas C.M. Fuller, Mahmoud Khojasteh, Jennifer V. Muncy, George G. Totir, Karl E. Boggs, Emanuel I. Cooper, Michael W. Owens, James L. Simpson
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Patent number: 8440494Abstract: Alternative additives that can be used in place of isopropyl alcohol in aqueous alkaline etchant solutions for texturing a surface of a single-crystalline silicon substrate are provided. The alternative additives do not have volatile constituents, yet can be used in an aqueous alkaline etchant solution to provide a pyramidal shaped texture surface to the single-crystalline silicon substrate that is exposed to such an etchant solution. Also provided is a method of forming a textured silicon surface. The method includes immersing a single-crystalline silicon substrate into an etchant solution to form a pyramid shaped textured surface on the single-crystalline silicon substrate. The etchant solution includes an alkaline component, silicon (etched into the solution as a bath conditioner) and glycerol or ethylene glycol as an additive. The textured surface of the single-crystalline silicon substrate has (111) faces that are now exposed.Type: GrantFiled: May 20, 2011Date of Patent: May 14, 2013Assignee: International Business Machines CorporationInventors: Kathryn C. Fisher, Jun Liu, Satyavolu S. Papa Rao, George G. Totir, James Vichiconti